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in subjects: "Vacancies"

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Mutual Passivation in Dilulte GaNxAs1-x Alloys

The dilute GaN{sub x}As{sub 1-x} alloys (with x up to 0.05) have exhibited many unusual properties as compared to the conventional binary and ternary semiconductor alloys. We report on a new effect in the GaN{sub x}As{sub 1-x} alloy system in which electrically active substitutional group IV donors and isoelectronic N atoms passivate each other's activity. This mutual passivation occurs in dilute GaN{sub x}As{sub 1-x} doped with group IV donors through the formation of nearest neighbor IV{sub G… more

Date: March 21, 2005

Creator: Yu, K.M.; Walukiewicz, W.; Wu, J.; Mars, D.E.; Scarpulla, M.A.; Dubon, O.D. et al.

Item Type: Article

Partner: UNT Libraries Government Documents Department

open access

Mutual passivation effects in Si-doped diluted In{sub y}Ga{sub 1-y}As{sub 1-x}N{sub x} alloys

We report systematic investigations of the mutual passivation effects of Si hydrogenic donors and isovalent nitrogen in dilute InGaAs{sub 1-x}N{sub x} alloys. Upon thermal annealing at temperatures above {approx}650 C, the Si atoms diffuse assisted by the formation and migration of Ga vacancies. When they find nitrogen atoms, they form stable Si{sub Ga}-N{sub As} nearest-neighbor pairs. As a result of the pair formation, the electrical activity of Si{sub Ga} donors is passivated. At the same ti… more

Date: July 21, 2003

Creator: Wu, J.; Yu, K.M.; Walukiewicz, W.; He, G.; Haller, E.E.; Mars, D.E. et al.