Refractory materials for high-temperature thermoelectric energy conversion
Description:
Theoretical work of two decades ago adequately explained the transport behavior and effectively guided the development of thermoelectric materials of high conversion efficiencies of conventional semiconductors (e.g., SiGe alloys). The more significant contributions involved the estimation of optimum doping concentrations, the reduction of thermal conductivity by solid solution doping and the development of a variety of materials with ZT approx. 1 in the temperature range 300 K to 1200 K. It was…
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Date:
January 1, 1983
Creator:
Wood, C. & Emin, D.
Partner:
UNT Libraries Government Documents Department