The Size Effect on the Galvanomagnetic Properties of a Semiconductor
Description:
A theory is developed to explain the dependence of carrier transport in a thin semiconducting film on film thickness, magnetic field strength, and the dominant bulk scattering mechanism. This theory is based on the solution of the linearized Boltzmann equation in relaxation time form. The semiconductor is assumed to be bounded and nondegenerate with spherical energy surfaces and a scalar effective mass, It is also assumed to be flat banded with totally diffuse scattering at the surface. Classic…
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Date:
August 1980
Creator:
Smith, V. Devon (Vernon Devon)