A study of Pd-Ta on Si(100) using AES, RBS and variable energy positron annihilation Page: 1 of 21
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BNL-42053
1 A study of P1-Ta on Si(100) using AES, RBS and variable energy positron annihilation.
G. VAN DER KOLK (I), A.F.T. KUIPER (1), J.P.W.B. DUCIATFIAU (1), M. WIIVPMSEN (1),
BENT NIIl SEN (2) and K.G. LYNN (2).
(I, Philips Research Laboratories. 5600 ./A Findhoven, the Netherlands.
(2) Brookhaven National Laboratory. Upton, New York, /1973. BNL--4 2053
DE89 005646
ABS'1RACT
The applicability of PdTa,., as a diffusion barrier on Si has been investigated. For this purpose PdTa,
films of 200 nm thickness (x ranges from 0 to 1) were deposited on Si(100), and the reaction between over-
layer and substrate was studied as a function of temperature. Interaction was found to occur at temperatures
increasing with the Ta content. The as-deposited PdTa,., films with 0.2 x s 0.6 were found to be amor-
phous. The amorphous phase had a higher reaction temperature than the crystalline onc, causing a dis-
continuous step in the reaction temperature. RBS spectra revealed that for the Pd-rich compositions first a
stoichiometric Pd2Si layer formed underneath a pure Ta layer. At higher temperatures TaSi, formed at the
surface. For Ta-rich compositions Pd2Si formed first as well, however, the reaction temperature was so high
that Pd2Si grains formed in a Si matrix. The defect density of the Ta layer, which remained after outdiffusion
of Pd, was investigated using variable energy positron annihilation. The defect concentration is very high,
as deduced from the trapped positron fraction. A model is presented that describes the composition de-
pendence of the reaction temperature.
DISCLAIMER
T; is report was prepared as an account of work sponsored by an agency of the United States
Government. Neither the United States Government nor any agency th,;reof, nor any of their
employees, makes any warranty, express or implied, or assumes any legal liability or responsi-
bility for the accuracy, completeness, or usefulness of any information, apparatus, product, or
process disclosed, or represents that its use would not infringe privately owned rights. Refer-
ence herein to any specific commercial product, process, or service by trade name, trademark,
manufacturer, or otherwise does not necessarily constitute or imply its endorsement, recom-
mendation, or favoring by the United States Government or any agency thereof The views
and opinions of authors expressed herein do not necessarily state or reflect those of the
United States Government or any agency thereof.
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Van Der Kolk, G. J.; Kuiper, A. E. T.; Duchateau, J. P. W. B.; Willemsen, M.; Nielsen, B. & Lynn, K. G. A study of Pd-Ta on Si(100) using AES, RBS and variable energy positron annihilation, article, January 1, 1988; Upton, New York. (https://digital.library.unt.edu/ark:/67531/metadc1190667/m1/1/: accessed July 16, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.