Search Results

Degradation Mechanisms and Dynamics of Silicon Telluride: A Guide to the Effective Fabrication and Characterization of Silicon Telluride-Based Devices
Silicon telluride (Si2Te3) and many other tellurium containing compounds show emergent Raman peaks located at ~120 cm-1 and ~140 cm-1 as they age. The origin of these two emergent peaks is controversial in the literature and has been attributed to myriad causes such as the intrinsic Raman modes of the telluride materials, surface oxidation, defects, double resonances, and tellurium precipitates. The controversial nature of these peaks has led to the misidentification of highly degraded materials as pristine and to the misinterpretation of changes in Raman spectra. For the first time, quality thin film and bulk crystals of Si2Te3 are grown using a chemical vapor deposition (CVD) process. We then present a comprehensive and multimodal study of various Si2Te3 samples and find that the two emergent Raman peaks originate from tellurium nano-crystallites formed in the degraded surface layers of Si2Te3. The formation of the tellurium nano-crystallites are shown to be a result of a hydrolysis process in which Si2Te3 reacts with atmospheric water vapor. The challenges involved in the fabrication of Si2Te3 based devices are also discussed and ways in which degradation can be either prevented or reversed are demonstrated. Finally, we present preliminary data which shows promising low voltage switching behavior in Si2Te3 memory devices.
Transport of Proton, Hydrogen and Alpha Particles through Atomic Hydrogen Environment
Using multiple theoretical methods, comprehensive calculations are performed to create a new and more comprehensive data set for elastic scattering and related transport cross sections for collisions of (H$^+$ + H), (H + H) and (He$^{2+}$ + H) in the center-of-mass energy frame. In proton-atomic hydrogen collisions, we have significantly updated and extended previous work of elastic scattering, charge transfer and related transport integral and differential cross sections in the center-of-mass energy range $10^{-4} - 10^4$ eV where the multi-channel molecular orbital approach (MO3) is used. For atomic hydrogen-hydrogen collisions, similar updates have been made of elastic scattering and spin exchange differential and integral cross sections, also for the H + H collision the ionization and negative ion formation cross sections are provided in energy range (1-20 KeV) by use of the 'hidden crossing' theoretical framework. For collisions of alpha particles with atomic hydrogen we have computed the elastic scattering cross section in the center-of-mass energy range $10^{-4} - 10^8$ eV. In this case, at the lowest energies where elastic scattering greatly dominates other reaction channels, a single-channel quasi-molecular-orbital approach (MO1) is used. With the opening of inelastic channels at higher energies the multi-channel atomic-orbital, close-coupling method is applied, and at the highest energies considered perturbation theory (the Born approximation) is used. The results are compared with other data available in literature.
Optical Control of Coherent Quantum Systems
Optical control of coherent quantum systems has many methods and applications. In this defense we will discuss the effects of an electric field interacting with molecules with dipole moments. The theoretical study of such molecules will consist of two-level atom and a three-level atom in the λ configuration. The methods that will be discussed are population trapping using both bright and dark starts obtained by both STIRAP and CHIRAP pulses. The application to be discussed is how to create a room temperature maser.
Investigating Accretion Mechanisms and Host Galaxy Environments of z~4 Quasars
Observations of quasars at the highest accessible redshifts have revealed supermassive black holes (SMBHs) with masses much too massive to be accounted for by the growth mechanisms observed in the local universe. Masses up to 10 10 M ⊙ up to z~7 seem to suggest some type of secular evolution or external influence to feed the earliest SMBHs at extremely high rates. Observations at such redshifts come at expensive technical cost and require significant dedicated space-telescope observing time. However, in the z~4 regime, SMBHs are still relatively young, exhibit extreme growth rates, and are economically accessible for both frequent shallow snapshots as well as deep observations. In this dissertation, the accretion mechanisms of z~4 quasars and the structure of their host galaxies and nearby companions are investigated to search for evolution over cosmic time as well as outside influence on star formation rates (SFRs) and SMBH growth. Building the longest available X-ray light curves of four representative radio-quiet quasars, X-ray variability is evaluated at timescales from days to years in the rest frame, and robust simulations allow both qualitative and quantitate measurements of variability to compare with samples at lower redshifts. At all timescales, X-ray variability is consistent with or lower than lower-redshift samples and no evolution is observed. To investigate regions outside the central quasar, deep rest-frame UV observations of six similar quasars whose hosts exhibit highly varying SFRs are used to map the structure of star forming regions in the host galaxy and investigate the sky density of nearby sources. Despite the suggested hypothesis that major galactic mergers influence high SFRs, no evidence of merger scenarios is shown in the high-SFR sources, and the lower-SFR, which were thought to reside in sparse environments, also reside in dense environments.
Ultrasonic Wave Propagation and Localization in a Nonreciprocal Phononic Crystal
Ultrasonic wave propagation through a two-dimensional nonreciprocal phononic crystal with asymmetric aluminum rods in viscous water is studied for its application in Anderson localization and trapping of acoustic energy. A one-dimensional disorder in the otherwise 2D periodic crystal is introduced by disorienting the asymmetric rods along the rows and by keeping them equally oriented along the columns. An exponential decay of sound waves travelling along the direction of disorder is observed demonstrating Anderson localization whereas sound propagates as extended wave along the ordered direction. Localization length for the case of strong disorder with high randomness in the orientation of rods and weak disorder with weak fluctuations in the orientation of rods is evaluated. The degree of randomness in the orientation of the rods controls the localization length of the wave. Thouless's theoretical prediction for the scaling of Lyapunov exponent with disorder is experimentally observed for weak disorder at frequency in the transmission band and anomalous scaling is observed for band edge frequency. Transmission spectra of acoustic waves is also measured for opposite direction of propagation and nonreciprocity is observed for the exponentially weak transmission in the disordered direction as well as for extended states in the ordered direction. Breaking of reciprocity in the current structure is due to the broken PT symmetry. The T symmetry or the time reversal symmetry is broken by the viscous dissipation at the boundaries of scatterers and the water, and the P symmetry is broken by the asymmetric shape of the rods. Acoustic energy trapping inside a nonreciprocal phononic crystal cavity is studied by creating three configurations of cavities. These configurations are based on the orientation of the asymmetric scatterers on each side of the cavity. Only one of these configuration utilizes the nonreciprocal property of the structure. Enhancement of energy trapping in the cavity …
Towards Increased Precision of the 4He:23P1→23P2 Transition Measurement Using Laser Spectroscopy
Significant sub-systems were created and others enhanced providing a platform for an order of magnitude precision increase of the small 4He interval - 23P1→23P2 laser spectroscopy measurement, as well as other helium transitions. These measurements serve as tests of helium theory and quantum electro-dynamics in general. Many improvements to the original experiment are discussed and characterized. In particular, counting speed increased 10x, the signal level was doubled, a novel Doppler shift minimization technique was implemented, a control node re-architecture was realized along with many useful features, and the development environment was updated. An initial 28% precision improvement was achieved also providing a foundation for additional gain via a created smaller and more heavily windowed vacuum cavity and picomotor controls.
Computational Techniques for Accelerated Materials Discovery
Increasing ubiquity of computational resources has enabled simulation of complex electronic systems and modern materials. The PAOFLOW software package is a tool designed to construct and analyze tight binding Hamiltonians from the solutions of DFT calculations. PAOFLOW leverages localized basis sets to greatly reduce computational costs of post-processing QE simulation results, enabling efficient determination of properties such as electronic density, band structures in the presence of electric or magnetic fields, magnetic or spin circular dichroism, spin-texture, Fermi surfaces, spin or anomalous Hall conductivity (SHC or AHC), electronic transport, and more. PAOFLOW's broad functionality is detailed in this work, and several independent studies where PAOFLOW's capabilities directly enabled research on promising candidates for ferroelectric and spintronic based technologies are described. Today, Quantum computers are at the forefront of computational information science. Materials scientists and quantum chemists can use quantum computers to simulate interacting systems of fermions, without having to perform the iterative methods of classical computing. This dissertation also describes a study where the band structure for silicon is simulated for the first time on quantum hardware and broadens this concept for simulating band structures of generic crystalline structures on quantum machines.
Information and Self-Organization in Complex Networks
Networks that self-organize in response to information are one of the most central studies in complex systems theory. A new time series analysis tool for studying self-organizing systems is developed and demonstrated. This method is applied to interacting complex swarms to explore the connection between information transport and group size, providing evidence for Dunbar's numbers having a foundation in network dynamics. A complex network model of information spread is developed. This network infodemic model uses reinforcement learning to simulate connection and opinion adaptation resulting from interaction between units. The model is applied to study polarized populations and echo chamber formation, exploring strategies for network resilience and weakening. The model is straightforward to extend to multilayer networks and networks generated from real world data. By unifying explanation and prediction, the network infodemic model offers a timely step toward understanding global collective behavior.
Manipulation of Light-Matter Interactions in Molybdenum Disulfide (MoS2) Monolayer through Dressed Phonons (DP) and Plasmons
The performance of electrical and optical devices based on two-dimensional semiconductors (2D) such as molybdenum disulfide is critically influenced due to very poor light absorption in the atomically thin layers. In this study, the phonon mediated optical absorption and emission properties in single atomic layers of MoS2 have been investigated. The electronic transitions in MoS2 due to near-field optical interaction and the influence of interface phonons due to the dielectric substrate GaN on the relaxation of optically generated carriers will be described. The near-field interaction can be induced in the presence of metal plasmons deposited on the surface of MoS2 monolayers. A hybrid metal-semiconductor system was realized by the deposition of silver (Ag) NPs on MoS2 layer and the localized plasmon modes were selectively chosen to interact with quasiparticles such as excitons and phonons. These quasiparticles are confined within the single atomic layer of MoS2 and are stable at room temperatures due to high binding energy. The lattice vibrational modes in MoS2 can be optically excited with the pulses from a femtosecond laser. These phonon modes can be optically dressed due to near-field interaction in the hybrid Ag-MoS2 system under an optical excitation resonant to localized plasmon modes. The coherent dynamics of the carriers in MoS2 were manipulated by the generation of dressed phonons. The driving field creates a coherence between the ground levels in the presence of optical near-field. A strong coupling between the exciton and plasmon modes forming a plexciton band is observed at room temperature within the coherence lifetime of the system. A significant enhancement of photoluminescent (PL) emission from MoS2 monolayer occurs due to carrier density modulation in the presence near-field interactions. The absorption and emission properties of MoS2 are influenced due to the interactions with the semiconducting substrate. The coupling of carriers in MoS2 with …
PAOFLOW-Aided Computational Materials Design
Functional materials are essential to human welfare and to provide foundations for emerging industries. As an alternative route to experimental materials discovery, computational materials designs are playing an increasingly significant role in the whole discovery process. In this work, we use an in-house developed python utility: PAOFLOW, which generates finite basis Hamiltonians from the projection of first principles plane-wave pseudopotential wavefunctions on pseudo atomic orbitals(PAO) for post-process calculation on various properties such as the band structures, density of states, complex dielectric constants, diffusive and anomalous spin and charge transport coefficients. In particular, we calculated the dielectric function of Sr-, Pb-, and Bi-substituted BaSnO3 over wide concentration ranges. Together with some high-throughput experimental study, our result indicates the importance of considering the mixed-valence nature and clustering effects upon substitution of BaSnO3 with Pb and Bi. We also studied two prototype ferroelectric rashba semiconductors, GeTe and SnTe, and found the spin Hall conductivity(SHC) can be large either in ferroelectric or paraelectric structure phase. Upon doping, the polar displacements in GeTe can be sustained up to a critical hole concentration while the tiny distortions in SnTe vanish at a minimal level of doping. Moreover, we investigated the sensitivity of two dimensional group-IV monochalcogenides to external strain and doping, which reveal for the first time giant intrinsic SHC in these materials, providing a new route for the design of highly tunable spintronics devices based on two-dimensional materials.
Exploring Growth Kinematics and Tuning Optical and Electronic Properties of Indium Antimonide Nanowires
This dissertation work is a study of the growth kinematics, synthesis strategies and intrinsic properties of InSb nanowires (NWs). The highlights of this work include a study of the effect of the growth parameters on the composition and crystallinity of NWs. A change in the temperature ramp-up rate as the substrate was heated to reach the NW growth temperature resulted in NWs that were either crystalline or amorphous. The as-grown NWs were found to have very different optical and electrical properties. The growth mechanism for crystalline NWs is the standard vapor-liquid-solid growth mechanism. This work proposes two possible growth mechanisms for amorphous NWs. The amorphous InSb NWs were found to be very sensitive to laser radiation and to heat treatment. Raman spectroscopy measurements on these NWs showed that intense laser light induced localized crystallization, most likely due to radiation induced annealing of defects in the region hit by the laser beam. Electron transport measurements revealed non-linear current-voltage characteristics that could not be explained by a Schottky diode behavior. Analysis of the experimental data showed that electrical conduction in this material is governed by space charge limited current (SCLC) in the high bias-field region and by Ohm's law in the low bias region. Temperature dependent conductivity measurements on these NWs revealed that conduction follows Mott variable range hopping mechanism at low temperatures and near neighbor hopping mechanism at high temperature. Low-temperature annealing of the amorphous NWs in an inert environment was found to induce a phase transformation of the NWs, causing their crystallinity to be enhanced. This thesis also proposes a new and low-cost strategy to grow p-type InSb NWs on InSb films grown on glass substrate. The high quality polycrystalline InSb film was used as the host on which the NWs were grown. The NWs with an average diameter of …
Electrically Tunable Absorption and Perfect Absorption Using Aluminum-Doped Zinc Oxide and Graphene Sandwiched in Oxides
Understanding the fundamental physics in light absorption and perfect light absorption is vital for device applications in detector, sensor, solar energy harvesting and imaging. In this research study, a large area fabrication of Al-doped ZnO/Al2O3/graphene/Al2O3/gold/silicon device was enabled by a spin-processable hydrophilic mono-layer graphene oxide. In contrast to the optical properties of noble metals, which cannot be tuned or changed, the permittivity of transparent metal oxides, such as Al-doped ZnO and indium tin oxide, are tunable. Their optical properties can be adjusted via doping or tuned electrically through carrier accumulation and depletion, providing great advantages for designing tunable photonic devices or realizing perfect absorption. A significant shift of Raman frequency up to 360 cm-1 was observed from graphene in the fabricated device reported in this work. The absorption from the device was tunable with a negative voltage applied on the Al-doped ZnO side. The generated absorption change was sustainable when the voltage was off and erasable when a positive voltage was applied. The reflection change was explained by the Fermi level change in graphene. The sustainability of tuned optical property in graphene can lead to a design of device with less power consumption.
Quantum Coherence Effects Coupled via Plasmons
This thesis is an attempt at studying quantum coherence effects coupled via plasmons. After introducing the quantum coherence in atomic systems in Chapter 1, we utilize it in Chapter 2 to demonstrate a new technique of detection of motion of single atoms or irons inside an optical cavity. By taking into account the interaction of coherences with surface plasmonic waves excited in metal nanoparticles, we provide a theoretical model along with experimental data in Chapter 3 to describe the modification of Raman spectra near metal nanoparticles. We show in chapter 4 that starting from two emitters, coupled via a plasmonic field, the symmetry breaking occurs, making detectable the simultaneous existence of the fast super-radiance and the slow sub-radiance emission of dye fluorescence near a plasmonic surface. In Chapter 5, we study the photon statistics of a group of emitters coupled via plasmons and by the use of quantum regression theorem, we provide a theoretical model to fully investigate the dependence of photon bunching and anti-bunching effects to the interaction between atoms, fields and surrounding mediums.
Fabrication and Study of the Optical Properties of 3D Photonic Crystals and 2D Graded Photonic Super-Crystals
In this dissertation, I am presenting my research on the fabrication and simulation of the optical properties of 3D photonic crystals and 2D graded photonic super-crystals. The 3D photonic crystals were fabricated using holographic lithography with a single, custom-built reflective optical element (ROE) and single exposure from a visible light laser. Fully 3D photonic crystals with 4-fold, 5- fold, and 6-fold symmetries were fabricated using the flexible, 3D printed ROE. In addition, novel 2D graded photonic super-crystals were fabricated using a spatial light modulator (SLM) in a 4f setup for pixel-by-pixel phase engineering. The SLM was used to control the phase and intensity of sets of beams to fabricate the 2D photonic crystals in a single exposure. The 2D photonic crystals integrate super-cell periodicities with 4-fold, 5-fold, and 6-fold symmetries and a graded fill fraction. The simulations of the 2D graded photonic super-crystals show extraordinary properties such as full photonic band gaps and cavity modes with Q-factors of ~106. This research could help in the development of organic light emitting diodes, high-efficiency solar cells, and other devices.
Physical Boundary as a Source of Anomalies in Transport Processes in Acoustics and Electrodynamics
Various anomalous effects that emerge when the interfaces between media are involved in sound-matter or light-matter interactions are studied. The three specific systems examined are a fluid channel between elastic metal plates, a linear chain of metallic perforated cylindrical shells in air, and a metal-dielectric slab with the interfaces treated as finite regions of smoothly changing material properties. The scattering of acoustic signals on the first two is predicted to be accompanied by the effects of redirection and splitting of sound. In the third system, which supports the propagation of surface plasmons, it is discovered that the transition region introduces a nonradiative decay mechanism which adds to the plasmon dissipation. The analytical results are supported with numerical simulations. The outlined phenomena provide the ideas and implications for applications involving manipulation of sound or excitation of surface plasmons.
Core-Shell Based Metamaterials: Fabrication Protocol and Optical Properties
The objective of this study is to examine core-shell type plasmonic metamaterials aimed at the development of materials with unique electromagnetic properties. The building blocks of metamaterials under study consist of gold as a metal component, and silica and precipitated calcium carbonate (PCC) as the dielectric media. The results of this study demonstrate important applications of the core-shells including scattering suppression, airborne obscurants made of fractal gold shells, photomodification of the fractal structure providing windows of transparency, and plasmonics core-shell with a gain shell as an active device. Plasmonic resonances of the metallic shells depend on their nanostructure and geometry of the core, which can be optimized for the broadband extinction. Significant extinction from the visible to mid-infrared makes fractal shells very attractive as bandpass filters and aerosolized obscurants. In contrast to the planar fractal films, where the absorption and reflection equally contribute to the extinction, the shells' extinction is caused mainly by the absorption. This work shows that the Mie scattering resonance of a silica core with 780 nm diameter at 560 nm is suppressed by 75% and only partially substituted by the absorption in the shell so that the total transmission is noticeably increased. Effective medium theory supports our experiments and indicates that light goes mostly through the epsilon-near-zero shell with approximately wavelength independent absorption rate. Broadband extinction in fractal shells allows as well for a laser photoburning of holes in the extinction spectra and consequently windows of transparency in a controlled manner. Au fractal nanostructures grown on PCC flakes provide the highest mass normalized extinction, up to 3 m^2/g, which has been demonstrated in the broad spectral range. In the nanoplasmonic field active devices consist of a Au nanoparticle that acts as a cavity and the dye molecules attached to it via thin silica shell as the …
Design, Construction, and Application of an Electrostatic Quadrupole Doublet for Heavy Ion Nuclear Microprobe Research
A nuclear microprobe, typically consisting of 2 - 4 quadrupole magnetic lenses and apertures serving as objective and a collimating divergence slits, focuses MeV ions to approximately 1 x 1 μm for modification and analysis of materials. Although far less utilized, electrostatic quadrupole fields similarly afford strong focusing of ions and have the added benefit of doing so independent of ion mass. Instead, electrostatic quadrupole focusing exhibits energy dependence on focusing ions. A heavy ion microprobe could extend the spatial resolution of conventional microprobe techniques to masses untenable by quadrupole magnetic fields. An electrostatic quadrupole doublet focusing system has been designed and constructed using several non-conventional methods and materials for a wide range of microprobe applications. The system was modeled using the software package "Propagate Rays and Aberrations by Matrices" which quantifies system specific parameters such as demagnification and intrinsic aberrations. Direct experimental verification was obtained for several of the parameters associated with the system. Details of the project and with specific applications of the system are presented.
Local Phase Manipulation for Multi-Beam Interference Lithography for the Fabrication of Two and Three Dimensional Photonic Crystal Templates
In this work, we study the use of a spatial light modulator (SLM) for local manipulation of phase in interfering laser beams to fabricate photonic crystal templates with embedded, engineered defects. A SLM displaying geometric phase patterns was used as a digitally programmable phase mask to fabricate 4-fold and 6-fold symmetric photonic crystal templates. Through pixel-by-pixel phase engineering, digital control of the phases of one or more of the interfering beams was demonstrated, thus allowing change in the interference pattern. The phases of the generated beams were programmed at specific locations, resulting in defect structures in the fabricated photonic lattices such as missing lattice line defects, and single-motif lattice defects in dual-motif lattice background. The diffraction efficiency from the phase pattern was used to locally modify the filling fraction in holographically fabricated structures, resulting in defects with a different fill fraction than the bulk lattice. Through two steps of phase engineering, a spatially variant lattice defect with a 90° bend in a periodic bulk lattice was fabricated. Finally, by reducing the relative phase shift of the defect line and utilizing the different diffraction efficiency between the defect line and the background phase pattern, desired and functional defect lattices can be registered into the background lattice through direct imaging of the designed phase patterns.
Low-Energy Electron Irradiation of Preheated and Gas-Exposed Single-Wall Carbon Nanotubes
We investigate the conditions under which electron irradiation of single-walled carbon nanotube (SWCNT) bundles with 2 keV electrons produces an increase in the Raman D peak. We find that an increase in the D peak does not occur when SWCNTs are preheated in situ at 600 C for 1 h in ultrahigh vacuum (UHV) before irradiation is performed. Exposing SWCNTs to air or other gases after preheating in UHV and before irradiation results in an increase in the D peak. Small diameter SWCNTs that are not preheated or preheated and exposed to air show a significant increase in the D and G bands after irradiation. X-ray photoelectron spectroscopy shows no chemical shifts in the C1s peak of SWCNTs that have been irradiated versus SWCNTs that have not been irradiated, suggesting that the increase in the D peak is not due to chemisorption of adsorbates on the nanotubes.
Ion Beam Synthesis of Binary and Ternary Transition Metal Silicide Thin Films
Among the well-known methods to form or modify the composition and physical properties of thin films, ion implantation has shown to be a very powerful technique. In particular, ion beam syntheses of binary iron silicide have been studied by several groups. Further, the interests in transition metal silicide systems are triggered by their potential use in advanced silicon based opto-electronic devices. In addition, ternary silicides have been by far less studied than their binary counterparts despite the fact that they have interesting magnetic and electronic properties. In this study, we investigate ion beam synthesis of Fe-Si binary structures and Fe-Co-Si ternary structures. This work involves fundamental investigation into development of a scalable synthesis process involving binary and ternary transitional metal silicide thin films and Nano-structures using low energy ion beams. Binary structures were synthesized by implanting Fe- at 50 keV energy. Since ion implantation is a dynamic process, Dynamic simulation techniques were used in these studies to determine saturation fluences for ion implantation. Also, static and dynamic simulation results were compared with experimental results. The outcome of simulations and experimental results indicate, dynamic simulation codes are more suitable than static version of the TRIM to simulate high fluence, low energy and, heavy ion implantation processes. Furthermore, binary Fe-Si phase distribution was determined at different implantation fluences and annealing temperatures. A higher fluence implantation at 2.16×1017 atoms/cm2 and annealing at 500 oC showed three different Fe-Si phase formations (β-FeSi2, FeSi and Fe3Si) in substrate. Further, annealing the samples at 800 oC for 60 minutes converted the Fe3Si phase into FeSi2 and FeSi phases. As an extension, a second set of Fe- ion implantations was carried with the same parameters while the substrate was placed under an external magnetic field. External magnetic fields stimulate the formation of magnetic phase centers in the …
Ultrasensitive Technique for Measurement of Two-Photon Absorption
Intensive demands have arisen to characterize nonlinear optical properties of materials for applications involving optical limiters, waveguide switches and bistable light switches. The technique of Pulse Delay Modulation is described which can monitor nonlinear changes in transmission with shot noise limited signal-to-noise ratios even in the presence of large background signals. The theoretical foundations of the experiment are presented followed by actual measurements of beam depletion due to second harmonic generation in a LiIO3 crystal and two-photon absorption in the semiconductor ZnSe. Sensitivity to polarization rotation arising from the Kerr Effect in carbon disulfide, saturable absorber relaxation in modelocking dyes and photorefractive effects in ZnSe are demonstrated. The sensitivity of Pulse Delay Modulation is combined with Fabry-Perot enhancement to allow the measurement of two-photon absorption in a 0.46pm thick interference filter spacer layer. Also included is a study of nonlinear optical limiting arising from dielectric breakdown in gases.
Investigation of the Effects of Compressive Uniaxial Stress on the Hole Carriers in P-type InSb
The influence of uniaxial compression upon the Hall effect ad resistivity of cadmium-doped samples of InSb at 77 K, 64 K, and 12 K are reported. Unilaxial compressions as high as 6 kbar were applied to samples oriented in the {001} and {110} directions. The net hole concentration of the samples were about 5x10^13 cm^-3 at 77 K as determined from the Hall coefficient at 24 kilogauss. The net concentration of hole carriers decreases and then increases exponentially with stress at 77 k and 64 k, while at 12 k there is only a monotonic increase of carrier concentration with stress. Analysis of the hole concentration as a function of stress shows the presence of a deep acceptor level located about 90 meV above the valence band edge in additionb to the 10 meV vadmium acceptor level. The shallow acceptor level does not split with stress. The hole density data is represented very well by models which describe both the variation in the net density of states and motion of the acceptor levels as a function of stress.
Fractional Calculus and Dynamic Approach to Complexity
Fractional calculus enables the possibility of using real number powers or complex number powers of the differentiation operator. The fundamental connection between fractional calculus and subordination processes is explored and affords a physical interpretation for a fractional trajectory, that being an average over an ensemble of stochastic trajectories. With an ensemble average perspective, the explanation of the behavior of fractional chaotic systems changes dramatically. Before now what has been interpreted as intrinsic friction is actually a form of non-Markovian dissipation that automatically arises from adopting the fractional calculus, is shown to be a manifestation of decorrelations between trajectories. Nonlinear Langevin equation describes the mean field of a finite size complex network at criticality. Critical phenomena and temporal complexity are two very important issues of modern nonlinear dynamics and the link between them found by the author can significantly improve the understanding behavior of dynamical systems at criticality. The subject of temporal complexity addresses the challenging and especially helpful in addressing fundamental physical science issues beyond the limits of reductionism.
Nonlinear and Quantum Optics Near Nanoparticles
We study the behavior of electric fields in and around dielectric and metal nanoparticles, and prepare the ground for their applications to a variety of systems viz. photovoltaics, imaging and detection techniques, and molecular spectroscopy. We exploit the property of nanoparticles being able to focus the radiation field into small regions and study some of the interesting nonlinear, and quantum coherence and interference phenomena near them. The traditional approach to study the nonlinear light-matter interactions involves the use of the slowly varying amplitude approximation (SVAA) as it simplifies the theoretical analysis. However, SVVA cannot be used for systems which are of the order of the wavelength of the light. We use the exact solutions of the Maxwell's equations to obtain the fields created due to metal and dielectric nanoparticles, and study nonlinear and quantum optical phenomena near these nanoparticles. We begin with the theoretical description of the electromagnetic fields created due to the nonlinear wavemixing process, namely, second-order nonlinearity in an nonlinear sphere. The phase-matching condition has been revisited in such particles and we found that it is not satisfied in the sphere. We have suggested a way to obtain optimal conditions for any type and size of material medium. We have also studied the modifications of the electromagnetic fields in a collection of nanoparticles due to strong near field nonlinear interactions using the generalized Mie theory for the case of many particles applicable in photovoltaics (PV). We also consider quantum coherence phenomena such as modification of dark states, stimulated Raman adiabatic passage (STIRAP), optical pumping in $4$-level atoms near nanoparticles by using rotating wave approximation to describe the Hamiltonian of the atomic system. We also considered the behavior of atomic and the averaged atomic polarization in $7$-level atoms near nanoparticles. This could be used as a prototype to study …
Variational Calculations of Positronium Scattering with Hydrogen
Positronium-hydrogen (Ps-H) scattering is of interest, as it is a fundamental four-body Coulomb problem. We have investigated low-energy Ps-H scattering below the Ps(n=2) excitation threshold using the Kohn variational method and variants of the method with a trial wavefunction that includes highly correlated Hylleraas-type short-range terms. We give an elegant formalism that combines all Kohn-type variational methods into a single form. Along with this, we have also developed a general formalism for Kohn-type matrix elements that allows us to evaluate arbitrary partial waves with a single codebase. Computational strategies we have developed and use in this work will also be discussed.With these methods, we have computed phase shifts for the first six partial waves for both the singlet and triplet states. The 1S and 1P phase shifts are highly accurate results and could potentially be viewed as benchmark results. Resonance positions and widths for the 1S-, 1P-, 1D-, and 1F-waves have been calculated.We present elastic integrated, elastic differential, and momentum transfer cross sections using all six partial waves and note interesting features of each. We use multiple effective range theories, including several that explicitly take into account the long-range van der Waals interaction, to investigate scattering lengths for the 1,3S and 1,3P partial waves and effective ranges for the 1,3S-wave.
Interaction of Plasmons and Excitons for Low-Dimension Semiconductors
The effects of surface plasmon for InGaN/GaN multi-quantum wells and ZnO nanoparticles optical linear and nonlinear emission efficiency had been experimentally studied. Due to the critical design for InGaN MQWs with inverted hexagonal pits based on GaN, both contribution of surface plasmon effect and image charge effect at resonant and off resonant frequencies were experimentally and theoretically investigated. With off- resonant condition, the InGaN MQWs emission significantly enhanced by metal nanoparticles. This enhancement was caused by the image charge effect, due to the accumulation of carriers to NPs region. When InGaN emission resonated with metal particles SP modes, surface Plasmon effect dominated the emission process. We also studied the surface plasmon effect for ZnO nanoparticles nonlinear optical processes, SHG and TPE. Defect level emission had more contribution at high incident intensity. Emissions are different for pumping deep into the bulk and near surface. A new assumption to increase the TPE efficiency was studied. We thought by using Au nanorods localized surface plasmon mode to couple the ZnO virtual state, the virtual state’s life time would be longer and experimentally lead the emission enhancement. We studied the TPE phenomena at high and near band gap energy. Both emission intensity and decay time results support our assumption. Theoretically, the carriers dynamic mechanism need further studies.
Analysis of Biological Materials Using a Nuclear Microprobe
The use of nuclear microprobe techniques including: Particle induced x-ray emission (PIXE) and Rutherford backscattering spectrometry (RBS) for elemental analysis and quantitative elemental imaging of biological samples is especially useful in biological and biomedical research because of its high sensitivity for physiologically important trace elements or toxic heavy metals. The nuclear microprobe of the Ion Beam Modification and Analysis Laboratory (IBMAL) has been used to study the enhancement in metal uptake of two different plants. The roots of corn (Zea mays) have been analyzed to study the enhancement of iron uptake by adding Fe (II) or Fe (III) of different concentrations to the germinating medium of the seeds. The Fe uptake enhancement effect produced by lacing the germinating medium with carbon nanotubes has also been investigated. The aim of this investigation is to ensure not only high crop yield but also Fe-rich food products especially from calcareous soil which covers 30% of world’s agricultural land. The result will help reduce iron deficiency anemia, which has been identified as the leading nutritional disorder especially in developing countries by the World Health Organization. For the second plant, Mexican marigold (Tagetes erecta), the effect of an arbuscular mycorrhizal fungi (Glomus intraradices) for the improvement of lead-phytoremediation of lead contaminated soil has been investigated. Phytoremediation provides an environmentally safe technique of removing toxic heavy metals (like lead), which can find their way into human food, from lands contaminated by human activities like mining or by natural disasters like earthquakes. The roots of Mexican marigold have been analyzed to study the role of arbuscular mycorrhizal fungi in enhancement of lead uptake from the contaminated rhizosphere.
Electrical Conduction Mechanisms in the Disordered Material System P-type Hydrogenated Amorphous Silicon
The electrical and optical properties of boron doped hydrogenated amorphous silicon thin films (a-Si) were investigated to determine the effect of boron and hydrogen incorporation on carrier transport. The a-Si thin films were grown by plasma enhanced chemical vapor deposition (PECVD) at various boron concentrations, hydrogen dilutions, and at differing growth temperatures. The temperature dependent conductivity generally follows the hopping conduction model. Above a critical temperature, the dominant conduction mechanism is Mott variable range hopping conductivity (M-VRH), where p = ¼, and the carrier hopping depends on energy. However, at lower temperatures, the coulomb interaction between charge carriers becomes important and Efros-Shklosvkii variable hopping (ES-VRH) conduction, where p=1/2, must be included to describe the total conductivity. To correlate changes in electrical conductivity to changes in the local crystalline order, the transverse optical (TO) and transverse acoustic (TA) modes of the Raman spectra were studied to relate changes in short- and mid-range order to the effects of growth temperature, boron, and hydrogen incorporation. With an increase of hydrogen and/or growth temperature, both short and mid-range order improve, whereas the addition of boron results in the degradation of short range order. It is seen that there is a direct correlation between the electrical conductivity and changes in the short and mid-range order resulting from the passivation of defects by hydrogen and the creation of trap states by boron. This work was done under the ARO grant W911NF-10-1-0410, William W. Clark Program Manager. The samples were provided by L-3 Communications.
Studies of Charged Particle Dynamics for Antihydrogen Synthesis
Synthesis and capture of antihydrogen in controlled laboratory conditions will enable precise studies of neutral antimatter. The work presented deals with some of the physics pertinent to manipulating charged antiparticles in order to create neutral antimatter, and may be applicable to other scenarios of plasma confinement and charged particle interaction. The topics covered include the electrostatic confinement of a reflecting ion beam and the transverse confinement of an ion beam in a purely electrostatic configuration; the charge sign effect on the Coulomb logarithm for a two component (e.g., antihydrogen) plasma in a Penning trap as well as the collisional scattering for binary Coulomb interactions that are cut off at a distance different than the Debye length; and the formation of magnetobound positronium and protonium.
Sputtering of Bi and Preferential Sputtering of an Inhomogeneous Alloy
Angular distributions and total yields of atoms sputtered from bismuth targets by normally incident 10 keV -50 keV Ne+ and Ar+ ions have been measured both experimentally and by computer simulation. Polycrystalline Bi targets were used for experimental measurements. The sputtered atoms were collected on high purity aluminum foils under ultra-high vacuum conditions, and were subsequently analyzed using Rutherford backscattering spectroscopy. The Monte-Carlo based SRIM code was employed to simulate angular distributions of sputtered Bi atoms and total sputtering yields of Bi to compare with experiment. The measured sputtering yields were found to increase with increasing projectile energy for normally incident 10 keV - 50 keV Ne+ and Ar+ ions. The shapes of the angular distributions of sputtered Bi atoms demonstrated good agreement between experiment and simulation in the present study. The measured and simulated angular distributions of sputtered Bi exhibited an over-cosine tendency. The measured value of the degree of this over-cosine nature was observed to increase with increasing incident Ne+ ion energy, but was not strongly dependent on incident Ar+ ion energy. The differential angular sputtering yield and partial sputtering yields due to Ar ion bombardment of an inhomogeneous liquid Bi:Ga alloy have been investigated, both experimentally and by computer simulation. Normally incident 25 keV and 50 keV beams of Ar+ were used to sputter a target of 99.8 at% Ga and 0.2 at% Bi held at 40° C in ultra-high vacuum (UHV), under which conditions the alloy is known to exhibit extreme Gibbsian surface segregation that produces essentially a monolayer of Bi atop the bulk liquid. Angular distributions of sputtered neutrals and partial sputtering yields obtained from the conversion of areal densities of Bi and Ga atoms on collector foils were determined. The Monte-Carlo based SRIM code was employed to simulate the experiment and obtain the angular …
Relaxation Time Measurements for Collision Processes in the Surface Layers of Conductors and Semiconductors Near 10 Ghz
This thesis represents one phase of a joint effort of research on the properties of liquids and solids. This work is concerned primarily with the microwave properties of solids. In this investigation the properties exhibited by conductor and semiconductor materials when they are subjected to electromagnetic radiation of microwave frequency are studied. The method utilized in this experiment is the perturbation of a resonant cavity produced by introduction of a cylindrically shaped sample into it.
The Classical Limit of Quantum Mechanics
The Feynman path integral formulation of quantum mechanics is a path integral representation for a propagator or probability amplitude in going between two points in space-time. The wave function is expressed in terms of an integral equation from which the Schrodinger equation can be derived. On taking the limit h — 0, the method of stationary phase can be applied and Newton's second law of motion is obtained. Also, the condition the phase vanishes leads to the Hamilton - Jacobi equation. The secondary objective of this paper is to study ways of relating quantum mechanics and classical mechanics. The Ehrenfest theorem is applied to a particle in an electromagnetic field. Expressions are found which are the hermitian Lorentz force operator, the hermitian torque operator, and the hermitian power operator.
Shubnikov-de Haas Effect Under Uniaxial Stress: A New Method for Determining Deformation Potentials and Band Structure Information in Semiconductors
The problem with which this investigation is concerned is that of demonstrating the applicability of a particular theory and technique to two materials of different band structure, InSb and HgSe, and in doing so, determining the deformation potentials of these materials. The theory used in this investigation predicts an inversion-asymmetry splitting and an anisotropy of the Fermi surface under uniaxial stress. No previous studies have ever verified the existence of an anisotropy of the Fermi surface of semiconductors under stress. In this work evidence will be given which demonstrates this anisotropy. Although the inversion-asymmetry splitting parameter has been determined for some materials, no value has ever been reported for InSb. The methods presented in this paper allow a value of the splitting parameter to be determined for InSb.
K-Shell Ionization Cross Sections of Selected Elements from Fe to As for Proton Bombardment from 0.5 to 2.0 MeV
The problem with which this investigation is concerned is that of making experimental measurements of proton-induced K-shell x-ray production cross sections and to study the dependence of these cross sections upon the energy of the incident proton. The measurements were made by detection of the characteristic x-rays emitted as a consequence of the ionization of the K-shell of the atom. The method for relating this characteristic x-ray emission to the x-ray production cross section is discussed in this work.
K-Shell Ionization Cross Sections For Elements Se To Pd: 0.4 To 2.0 MeV
K-Shell ionization cross section for protons over the energy range of 0.4 to 2.0 MeV have been measured on thin targets of the elements Se, Br, Rb, Sr, Y, Mo and Pd. Total x-ray and ionization cross sections for the K-shell are reported. The experimental values of the ionization cross sections are compared to the non-relativistic plane-wave Born approximation, the binary-encounter approximation, the constrained binary-encounter approximation, and the plane-wave Born approximation with corrections for Coulomb-deflection and binding energy effects.
Collision Broadening in the Microwave Rotational Spectrum of Gaseous Monomeric Formaldehyde
A source-modulation microwave spectrograph was utilized to measure line width parameters for several spectral lines in the pure rotational spectrum of formaldehyde (H₂CO). The spectrograph featured high-gain ac amplification and phase-sensitive detection, and was capable of measuring microwave lines having absorption coefficients as small as 10⁻⁷ cm⁻¹ with a frequency resolution on the order of 30 kHz. Center frequencies of the measured lines varied from 4,830 MHz to 72,838 MHz; hence, most of the observations were made on transitions between K-doublets in the rotational spectrum. Corrections were applied to the measured line width parameters to account for Doppler broadening and, where possible, for deviations due to magnetic hyperfine structure in some of the K-doubled lines. Low modulation voltages and low microwave power levels were used to minimize modulation and saturation broadenings; other extraneous broadenings were found to be insignificant. The primary broadening mechanism at low gas pressure is pressure broadening, and a review of this topic is included. Line width parameters for the several observed transitions were determined by graphing half-widths versus pressure for each spectral line, and performing a linear least-squares fit to the data points. Repeatability measurements indicated the accuracy of the line width parameters to be better than ±10 percent. The reasons for this repeatability spread are discussed, Broadening of each line was measured for self- and foreign-gas broadening by atomic helium and diatomic hydrogen. Effective collision diameters were calculated for each broadening interaction, based on the observed rates of broadening.
Novel Semi-Conductor Material Systems: Molecular Beam Epitaxial Growth and Characterization
Semi-conductor industry relies heavily on silicon (Si). However, Si is not a direct-band gap semi-conductor. Consequently, Si does not possess great versatility for multi-functional applications in comparison with the direct band-gap III-V semi-conductors such as GaAs. To bridge this gap, what is ideally required is a semi-conductor material system that is based on silicon, but has significantly greater versatility. While sparsely studied, the semi-conducting silicides material systems offer great potential. Thus, I focused on the growth and structural characterization of ruthenium silicide and osmium silicide material systems. I also characterized iron silicon germanide films using extended x-ray absorption fine structure (EXAFS) to reveal phase, semi-conducting behavior, and to calculate nearest neighbor distances. The choice of these silicides material systems was due to their theoretically predicted and/or experimentally reported direct band gaps. However, the challenge was the existence of more than one stable phase/stoichiometric ratio of these materials. In order to possess the greatest control over the growth process, molecular beam epitaxy (MBE) has been employed. Structural and film quality comparisons of as-grown versus annealed films of ruthenium silicide are presented. Structural characterization and film quality of MBE grown ruthenium silicide and osmium silicide films via in situ and ex situ techniques have been done using reflection high energy electron diffraction, scanning tunneling microscopy, atomic force microscopy, cross-sectional scanning electron microscopy, x-ray photoelectron spectroscopy, and micro Raman spectroscopy. This is the first attempt, to the best of our knowledge, to grow osmium silicide thin films on Si(100) via the template method and compare it with the regular MBE growth method. The pros and cons of using the MBE template method for osmium silicide growth are discussed, as well as the structural differences of the as-grown versus annealed films. Future perspectives include further studies on other semi-conducting silicides material systems in terms …
A Comprehensive Model for the Rotational Spectra of Propyne CH₃CCH in the Ground and V₁₀=1,2,3,4,5 Vibrational States
The energy states of C₃ᵥ symmetric top polyatomic molecules were studied. Both classical and quantum mechanical methods have been used to introduce the energy states of polyatomic molecules. Also, it is shown that the vibration-rotation spectra of polyatomic molecules in the ground and excited vibrational states can be predicted by group theory. A comprehensive model for predicting rotational frequency components in various v₁₀ vibrational levels of propyne was developed by using perturbation theory and those results were compared with other formulas for C₃ᵥ symmetric top molecules. The v₁₀=1,2,3 and ground rotational spectra of propyne in the frequency range 17-70 GHz have been reassigned by using the derived comprehensive model. The v₁₀=3 and v₁₀=4 rotational spectra of propyne have been investigated in the 70 GHz, and 17 to 52 GHz regions, respectively, and these spectral components assigned using the comprehensive model. Molecular constants for these vibrationally excited states have been determined from more than 100 observed rotational transitions. From these experimentally observed components and a model based upon first principles for C₃ᵥ symmetry molecules, rotational constants have been expressed in a form which enables one to predict rotational components for vibrational levels for propyne up to v₁₀=5. This comprehensive model also appears to be useful in predicting rotational components in more highly excited vibrational levels but data were not available for comparison with the theory. Several techniques of assignment of rotational spectra for each excited vibrational state are discussed. To get good agreement between theory and experiment, an additional term 0.762(J+1) needed to be added to Kℓ=1 states in v₁₀=3. No satisfactory theoretical explanation of this term has been found. Experimentally measured frequencies for rotational components for J→(J+1)=+1 (0≤J≤3) in each vibration v₁₀=n (0≤n≤4) are presented and compared with those calculated using the results of basic perturbation theory. The v₉=2 rotational …
Investigation of the Linear and Nonlinear Optical Properties of InSb
Highly sensitive magneto-optical techniques have been used to investigate weak linear and nonlinear optical absorption mechanisms in p- and n-type InSb. As a result, new absorption processes involving both impurities and free carriers have been identified and studied in detail. For p-InSb, magneto-optical spectra has been obtained over a wide range of temperatures and photon energies. The spectra obtained at higher sample temperatures are seen to result from combined-resonance transitions of free holes between heavy-and light-hole Landau levels, while bound-hole transitions between ground heavy-hole-like and excited light-hole-like acceptor states are observed at lower temperatures. Analysis of the combined-resonance data along with extensive intra-conduction band and two-photon interband data using a modified Pidgeon and Brown 8X8 energy band model has allowed the determination of a single set of band parameters for InSb that quantitatively describes these different sets of data. In addition, a ground state binding energy of 8.1 meV for Cd acceptors and 42.5 meV for Au acceptors has been extracted from the analysis of the bound-hole spectra. For n-lnSb, photo-Hall techniques have been developed and used to study both resonant impurity and two-photon magneto-absorption (TPMA) processes in detail. As a result, LO-phonon-assisted impurity cyclotron resonance harmonic (LOICRH) transitions from the shallow Te donor level have been observed for the first time. In addition, transitions from deep levels are also observed in the photo-Hall signal obtained at sample temperatures greater than 20K. Both time-resolved and intensity-dependent measurements on impurity and TPMA processes are reported and the results compared directly with the predictions of rate equations describing the photoexcited carrier dynamics. These investigations have yielded important information about the optical properties of n-InSb; e.g. impurity and two-photon absorption coefficients, photo-excited carrier lifetimes, and recombination rates.
Fluid Spheres in General Relativity: Exact Solutions and Applications to Astrophysics
Exact solutions to Einstein's field equations in the presence of matter are presented. A one parameter family of interior solutions for a static fluid is discussed. It is shown that these solutions can be joined to the Schwarzschild exterior, and hence represent fluid spheres of finite radius. Contained within this family is a set of solutions which are gaseous spheres defined by the vanishing of the density at the surface. One such solution yields an analytic expression which corresponds to the asymptotic numerical solution of Oppenheimer and Volkoff for the degenerate neutron gas. These gaseous spheres have ratios of specific heats that lie between one and two in the vicinity of the origin, increasing outward, but remaining less than the velocity of light throughout.
Detection of the Resonant Vibration of the Cellular Membrane Using Femtosecond Laser Pulses
An optical detection technique is developed to detect and measure the resonant vibration of the cellular membrane. Biological membranes are active components of living cells and play a complex and dynamic role in life processes. They are believed to have oscillation modes of frequencies in the range of 1 to 1000 GHz. To measure such a high-frequency vibration, a linear laser cavity is designed to produce a train of femtosecond pulses of adjustable repetition rate. The method is then directly applied to liposomes, "artificial membrane", stained with a liphophilic potential sensitive dye. The spectral behavior of a selection of potential sensitive dyes in the membrane is also studied.
K-, L-, and M-Shell X-Ray Production Cross Sections for Beryllium, Aluminum and Argon Ions Incident Upon Selected Elements
Incident 0.5 to 2.5 MeV charged particle beams were used to ionize the inner-shells of selected targets and study their subsequent emission of characteristic x-rays. ⁹Be⁺ ions were used to examine K-shell x-ray production from thin F, Na, Al, Si, P, Cl, and K targets, L-shell x-ray production from thin Cu, An, Ge, Br, Zr and Ag targets, and M-shell x-ray production from thin Pr, Nd, Eu, Dy, Ho, Hf, W, Au, Pb and Bi targets. L-shell x-ray production cross sections were also measured for ²⁷Al⁺ ions incident upon Ni, Cu, Zn, As, Zr, and Pd targets. M-shell x-ray production cross sections were measure for ²⁷Al⁺ and ⁴⁰Ar⁺ ions incident upon Pr, Nd, Gd, Dy, Lu, Hf, Au, Pb, Bi, and U targets. These measurements were performed using the 2.5 MV Van de Graaff accelerator at North Texas State University. The x-rays were detected with a Si(Li) detector whose efficiency was determined by fitting a theoretical photon absorption curve to experimentally measure values. The x-ray yields were normalized to the simultaneously measured Rutherford backscattered (RBS) yields which resulted in an x-ray production cross section per incident ion. The RBS spectrum was obtained using a standard surface barrier detector calibrated for to account for the "pulse height defect." The experimental results are compared to the predictions of both the first Born and ECPSSR theories; each of which is composed of two parts, the direct ionization (DI) of the target electron to the continuum and the capture (EC) of the target electron to the projectile. The first Born describes DI by the Plane-Wave-Born-Approximation (PWBA) and EC by the Oppenheimer-Brinkman-Kramers treatment of Nikolaev (OBKN). ECPSSR expands upon the first Born by using perturbed (PSS) and relativistic (R) target electron wave functions in addition to considering the energy loss (E) of the projectile in …
Investigation of the Interaction of CO Laser Radiation with n-InSb
The Shubnikov-de Haas magneto-resistance oscillations and photoconductivity were experimentally studied in order to investigate the interaction of CO laser radiation with n-InSb at liquid helium temperatures. The roles of various absorption mechanisms on these effects were considered, particularly near the intrinsic band edge. From these measurements an effective electron temperature Tₑ was defined that increased or decreased under illumination, depending upon the strength of the applied electric field.
Anomalous Behavior in the Rotational Spectra of the v₈=2 and the v₈=3 Vibrations for the ¹³C and ¹⁵N Tagged Isotopes of the CH₃CN Molecule in the Frequency Range 17-95 GHz
The rotational microwave spectra of the three isotopes (^13CH_3^12C^15N, ^12CH_3^13C^15N, and ^13CH_3^13C^15N) of the methyl cyanide molecule in the v_8=3, v_8=2, v_7=1 and v_4=1 vibrational energy levels for the rotational components 1£J£5 (for a range of frequency 17-95 GHz.) were experimentally and theoretically examined. Rotational components in each vibration were measured to determine the mutual interactions in each vibration between any of the vibrational levels investigated. The method of isotopic substitution was employed for internal tuning of each vibrational level by single and double substitution of ^13C in the two sites of the molecule. It was found that relative frequencies within each vibration with respect to another vibration were shifted in a systematic way. The results given in this work were interpreted on the basis of these energy shifts. Large departure between experimentally measured and theoretically predicted frequency for the quantum sets (J, K=±l, ϑ=±1), Kϑ-l in the v_8=3 vibrational states for the ^13c and ^15N tagged isotopes of CH_3CN showed anomalous behavior which was explained as being due to Fermi resonance. Accidently strong resonances (ASR) were introduced to account for some departures which were not explained by Fermi resonance.
Theoretical and Experimental Linewidth Parameters in the Rotational Spectrum of Nitrogen Dioxide
Contributions to the second order collision efficiency function S ⁽²⁾ (b), used in semiclassical perturbation approaches to pressure broadening of microwave and infrared spectra, due to several leading terms, dipole and quadrupole components, in the expansion of the intermolecular interaction energy are derived by method of irreducible spherical tensor operators for molecules of arbitrary symmetry. Results are given explicitly in terms of dipole and quadrupole line strengths. General expressions for dipole moment line strength in the asymmetric rotor basis as well as quadrupole moment line strength for the special case of molecules with two independent quadrupole moment components are derived. Computer programs for calculating linewidth parameters in the rotational spectrum of ¹⁴NO₂ based on Anderson and Murphy and Boggs theories are presented.
Inversion-Asymmetry Splitting of the Conduction Band in N-Type Indium Antimonide
The origin of the Shubnikov-de Haas effect, the strain theory developed by Bir and Pikus, and a simple, classical beating-effects model are discussed. The equipment and the experimental techniques used in recording the Shubnikov-de Haas oscillations of n-type indium antimonite are described. The analysis of the experimental data showed that the angular anisotropy of the period of SdH oscillations at zero stress was unmeasurable for low concentration samples as discussed by other workers. Thus the Fermi surfaces of InSb are nearly spherical at low concentration. It was also shown that the Fermi surface of a high concentration sample of InAs is also nearly spherical. The advantages of using the magnetic field modulation and phase sensitive detection techniques in determining the beats are given. The simple, classical beating-effects model is able to explain the experimental beating effect data in InSb. The computer programs used to obtain the theoretical values of the beat nodal position, SdH frequencies, average frequency, the Fermi surface contours, and the energy eigenvalues are given.
Target Thickness Dependence of Cu K X-Ray Production for Ions Moving in Thin Solid Cu Targets
Measurements of the target thickness dependence of the target x-ray production yield for incident fast heavy ions are reported for thin solid Cu targets as a function of both incident projectile atomic number and energy. The incident ions were F, Al, Si, S, and CI. The charge state of the incident ions was varied in each case to study the target x-ray production for projectiles which had an initial charge state, q, of q = Z₁, q = Z₁ - 1, and q < Z₁ - 1 for F, Al, Si, and S ions and q = Z₁ - 1 and q < Z₁ - 1 for C1 ions. The target thicknesses ranged from 2 to 183 ug/cm². In each case the Cu K x-ray yield exhibits a complex exponential dependence on target thickness. A two-component model which includes contributions to the target x-ray production due to ions with 0 and 1 K vacancies and a three-component model which includes contributions due to ions with 0, 1, and 2 K vacancies are developed to describe the observed target K x-ray yields. The two-component model for the C1 data and the three-component model for the F, Al, Si, S, and C1 data are fit to the individual data for each projectile, and the cross sections for both the target and projectile are determined. The fits to the target x-ray data give a systematic representation of the processes involved in x-ray production for fast heavy ions incident on thin solid targets.
Model for Long-range Correlations in DNA Sequences
We address the problem of the DNA sequences developing a "dynamical" method based on the assumption that the statistical properties of DNA paths are determined by the joint action of two processes, one deterministic, with long-range correlations, and the other random and delta correlated. The generator of the deterministic evolution is a nonlinear map, belonging to a class of maps recently tailored to mimic the processes of weak chaos responsible for the birth of anomalous diffusion. It is assumed that the deterministic process corresponds to unknown biological rules which determine the DNA path, whereas the noise mimics the influence of an infinite-dimensional environment on the biological process under study. We prove that the resulting diffusion process, if the effect of the random process is neglected, is an a-stable Levy process with 1 < a < 2. We also show that, if the diffusion process is determined by the joint action of the deterministic and the random process, the correlation effects of the "deterministic dynamics" are cancelled on the short-range scale, but show up in the long-range one. We denote our prescription to generate statistical sequences as the Copying Mistake Map (CMM). We carry out our analysis of several DNA sequences, and of their CMM realizations, with a variety of techniques, and we especially focus on a method of regression to equilibrium, which we call the Onsager Analysis. With these techniques we establish the statistical equivalence of the real DNA sequences with their CMM realizations. We show that long-range correlations are present in exons as well as in introns, but are difficult to detect, since the exon "dynamics" is shown to be determined by theentaglement of three distinct and independent CMM's. Finally we study the validity of the stationary assumption in DNA sequences and we discuss a biological model for the …
Angular Dependence of the Stopping Processes and the Yields of Ion-induced Electron Emission from Channeled MEV Protons in <100> Silicon Foils
The present work reports the experimental evidence of anomalous energy loss, energy straggling, and the corresponding ion-induced electron emission yields of channeled protons in silicon.
The Stopping Power of Amorphous and Channelled Silicon at All Energies as Computed with the Binary Encounter Approximation
This thesis utilizes the binary encounter approximation to calculate the stopping power of protons penetrating silicon. The main goal of the research was to make predictions of the stopping power of silicon for low-energy and medium-energy channelled protons, in the hope that this will motivate experiments to test the theory developed below. In attaining this goal, different stopping power theories were compared and the binary encounter approach was applied to random (non-channelled) and high-energy channelled protons in silicon, and these results were compared with experimental data.
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