Evaluation of hydrogen trapping in HfO2 high-κ dielectric thin films.
Description:
Hafnium based high-κ dielectrics are considered potential candidates to replace SiO2 or SiON as the gate dielectric in complementary metal oxide semiconductor (CMOS) devices. Hydrogen is one of the most significant elements in semiconductor technology because of its pervasiveness in various deposition and optimization processes of electronic structures. Therefore, it is important to understand the properties and behavior of hydrogen in semiconductors with the final aim of controlling and using …
more
Access:
Restricted to the UNT Community Members at a
UNT Libraries Location.
Date:
August 2006
Creator:
Ukirde, Vaishali