Materials properties of ruthenium and ruthenium oxides thin films for advanced electronic applications.
Description:
Ruthenium and ruthenium dioxide thin films have shown great promise in various applications, such as thick film resistors, buffer layers for yttrium barium copper oxide (YBCO) superconducting thin films, and as electrodes in ferroelectric memories. Other potential applications in Si based complementary metal oxide semiconductor (CMOS) devices are currently being studied. The search for alternative metal-based gate electrodes as a replacement of poly-Si gates has intensified during the last few …
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Access:
Restricted to the UNT Community Members at a
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Date:
May 2006
Creator:
Lim, ChangDuk