Stability of Field Emitter Arrays to Oxygen Exposures Page: 16
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problems are emission current instabilities and device failures resulting from the
contamination of the emitter tips by the residual gases in the vacuum package.
The arrays studied in this work were made by Pixtech for Texas Instruments. The
performance of similar devices has been reported in the literature. Figure 2.2 shows a
scanning electron microscope (SEM) image of a section of the field emitter array.
re
1 1,
Figure 2.2 SEM image of a section of the Spindt type FEA.28
The Mo tips are positioned atop a resistive layer of amorphous silicon for limiting
the emission current from each tip and to avoid catastrophic failures resulting from
runaway current. A thin layer of niobium metal deposited on top of the SiO2 gate
dielectric serves as the gate electrode. For the FEAs studied in this work, the gate
elements are tied to a single external electrode.
2.4. Emission Characteristics
The current-voltage (I-V) characteristics of a Spindt type FEA (#32107) are
shown in Fig 2.3. A positive bias (Vg) is applied between the Mo cathode and the gate
electrode and the field-emitted electrons leaving the array are collected on a platinum
coated silicon wafer, which works as the anode. The potential on the anode was kept at
+400 V (for DC mode) or +320 V (for Pulsed mode) with respect to the cathode.16
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Godbole, Soumitra Kumar. Stability of Field Emitter Arrays to Oxygen Exposures, thesis, December 2002; Denton, Texas. (https://digital.library.unt.edu/ark:/67531/metadc3346/m1/26/: accessed May 3, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; .