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Supercritical Silylation and Stability of Silyl Groups

Description: Methylsilsesquioxane (MSQ) and organosilicate glass (OSG) are the materials under this study because they exhibit the dielectric constant values necessary for future IC technology requirements. Obtaining a low-k dielectric value is critical for the IC industry in order to cope time delay and cross talking issues. These materials exhibit attractive dielectric value, but there are problems replacing conventional SiO2, because of their chemical, mechanical and electrical instability after plasma p… more
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Date: May 2006
Creator: Nerusu, Pawan Kumar
Item Type: Refine your search to only Thesis or Dissertation
Partner: UNT Libraries

Materials properties of ruthenium and ruthenium oxides thin films for advanced electronic applications.

Description: Ruthenium and ruthenium dioxide thin films have shown great promise in various applications, such as thick film resistors, buffer layers for yttrium barium copper oxide (YBCO) superconducting thin films, and as electrodes in ferroelectric memories. Other potential applications in Si based complementary metal oxide semiconductor (CMOS) devices are currently being studied. The search for alternative metal-based gate electrodes as a replacement of poly-Si gates has intensified during the last few … more
Access: Restricted to the UNT Community Members at a UNT Libraries Location.
Date: May 2006
Creator: Lim, ChangDuk
Item Type: Refine your search to only Thesis or Dissertation
Partner: UNT Libraries

Evaluation of hydrogen trapping in HfO2 high-κ dielectric thin films.

Description: Hafnium based high-κ dielectrics are considered potential candidates to replace SiO2 or SiON as the gate dielectric in complementary metal oxide semiconductor (CMOS) devices. Hydrogen is one of the most significant elements in semiconductor technology because of its pervasiveness in various deposition and optimization processes of electronic structures. Therefore, it is important to understand the properties and behavior of hydrogen in semiconductors with the final aim of controlling and using … more
Access: Restricted to the UNT Community Members at a UNT Libraries Location.
Date: August 2006
Creator: Ukirde, Vaishali
Item Type: Refine your search to only Thesis or Dissertation
Partner: UNT Libraries
open access

Low Temperature Polymeric Precursor Derived Zinc Oxide Thin Films

Description: Zinc oxide (ZnO) is a versatile environmentally benign II-VI direct wide band gap semiconductor with several technologically plausible applications such as transparent conducting oxide in flat panel and flexible displays. Hence, ZnO thin films have to be processed below the glass transition temperatures of polymeric substrates used in flexible displays. ZnO thin films were synthesized via aqueous polymeric precursor process by different metallic salt routes using ethylene glycol, glycerol, citr… more
Date: December 2006
Creator: Choppali, Uma
Item Type: Refine your search to only Thesis or Dissertation
Partner: UNT Libraries
open access

Study of lead sorption on magnetite at high temperatures.

Description: Lead's uptake on magnetite has been quantitatively evaluated in the present study at a temperature of 200°C and pH of 8.5 with lead concentrations ranging from 5 ppm to175 ppm by equilibrium adsorption isotherms. The pH independent sorption behavior suggested lead sorption due to pH independent permanent charge through weak electrostatic, non-specific attraction where cations are sorbed on the cation exchange sites. The permanent negative charge could be a consequence of lead substitution which… more
Date: December 2006
Creator: Paliwal, Vaishali
Item Type: Refine your search to only Thesis or Dissertation
Partner: UNT Libraries
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