0.52eV Quaternary InGaAsSb Thermophotovoltaic Diode Technology
Description:
Thermophotovoltaic (TPV) diodes fabricated from 0.52eV lattice-matched InGaAsSb alloys are grown by Metal Organic Vapor Phase Epitaxy (MOVPE) on GaSb substrates. 4cm{sup 2} multi-chip diode modules with front-surface spectral filters were tested in a vacuum cavity and attained measured efficiency and power density of 19% and 0.58 W/cm{sup 2} respectively at operating at temperatures of T{sub radiator} = 950 C and T{sub diode} = 27 C. Device modeling and minority carrier lifetime measurements of…
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Date:
June 9, 2004
Creator:
Dashiell, M. W.; Beausang, J. F.; Nichols, G.; Depoy, D. M.; Danielson, L. R.; Ehsani, H. et al.
Partner:
UNT Libraries Government Documents Department