Silicon ribbon growth by a capillary action shaping technique. Quarterly technical progress report No. 6
Description:
The effects of capillary die design on dopant distribution are described. A new technique for thermal geometry control utilizing inert-gas purging was implemented. Routine 38-mm-wide ribbon growth was demonstrated. 50-mm-wide ribbon growth in a length over one meter was achieved. A technology projection and guide to future silicon sheet growth was completed. (WDM)
Date:
December 15, 1976
Creator:
Schwuttke, G. H.; Ciszek, T. F. & Kran, A.
Partner:
UNT Libraries Government Documents Department