Annealing of Gamma Ray Induced Changes in Antimony Doped Germanium
Description:
An investigatiori of the annealing of the radioinduced carrier concentration change in Sb-doped Ge in the range 370 to 455 l K was made. The irradiations were conducted at liquid nitrogen temperature using Co/ sup 60/ gamma irradiation. A model that explains the observed behavior is presented. On the basis of the model, the observed annealing consists of vacancy diffusion simultaneously to impurity sites and annihilation centers. Analysis of the activation energy for the annealing process yield…
more
Date:
May 28, 1963
Creator:
Pigg, J. C.
Item Type:
Refine your search to only
Report
Partner:
UNT Libraries Government Documents Department