Synthesis of Semiconductor Materials by Radiation Induced Reations
Description:
"Progress is reported on: design of a continuous flow system for the irradiation of silane using a Cos5 source; pile irradiation of silane samples at elevated temperatures; investigation of materials other than silane, including nonsilicon compounds as well as those containing the silyl group; modification of the existing vacuum system for handling larger quantities of silane as well as increasing the accuracy of the pressure measurements; and use of an electric discharge for the decomposition …
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Date:
October 31, 1961
Creator:
Held, Kelman & Goldman, Richard
Partner:
UNT Libraries Government Documents Department