17.5% p-Type Silicon Heterojunction Solar Cells with HWCVD a-Si:H as the Emitter and Back Contact
Description:
Thin hydrogenated amorphous silicon (a-Si:H) layers deposited by hot-wire chemical vapor deposition (HWCVD) are used as both emitters and back contacts in silicon heterojunction solar cells. Low interface recombination velocity and high open-circuit voltage are achieved by a low substrate temperature (<150 deg C) intrinsic a-Si:H deposition which ensures immediate amorphous silicon deposition. This is followed by deposition of doped a-Si:H at a higher temperature (>200 deg C) which appears to i…
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Date:
November 1, 2005
Creator:
Wang, T. H.; Page, M. R.; Iwaniczko, E.; Wang, Q.; Xu,Y.; Yan, Y. et al.
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