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Picosecond Dynamics of Free-Carrier Populations, Space-Charge Fields, and Photorefractive Nonlinearities in Zincblende Semiconductors

Description: Generally, nonlinear optics studies investigate optically-induced changes in refraction or absorption, and their application to spectroscopy or device fabrication. The photorefractive effect is a nonlinear optical effect that occurs in solids, where transport of an optically-induced free-carrier population results in an internal space-charge field, which produces an index change via the linear electrooptic effect. The photorefractive effect has been widely studied for a variety of materials and… more
Date: August 1999
Creator: Stark, Thomas S.
Item Type: Refine your search to only Thesis or Dissertation
Partner: UNT Libraries
open access

Adhesion/Diffusion Barrier Layers for Copper Integration: Carbon-Silicon Polymer Films and Tantalum Substrates

Description: The Semiconductor Industry Association (SIA) has identified the integration of copper (Cu) with low-dielectric-constant (low-k) materials as a critical goal for future interconnect architectures. A fundamental understanding of the chemical interaction of Cu with various substrates, including diffusion barriers and adhesion promoters, is essential to achieve this goal. The objective of this research is to develop novel organic polymers as Cu/low-k interfacial layers and to investigate popular ba… more
Date: December 1999
Creator: Chen, Li
Item Type: Refine your search to only Thesis or Dissertation
Partner: UNT Libraries
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Work Function Study of Iridium Oxide and Molybdenum Using UPS and Simultaneous Fowler-Nordheim I-V Plots with Field Emission Energy Distributions

Description: The characterization of work functions and field emission stability for molybdenum and iridium oxide coatings was examined. Single emission tips and flat samples of molybdenum and iridium oxide were prepared for characterization. The flat samples were characterized using X-ray Photoelectron Spectroscopy and X-ray diffraction to determine elemental composition, chemical shift, and crystal structure. Flat coatings of iridium oxide were also scanned by Atomic Force Microscopy to examine topography… more
Date: August 1999
Creator: Bernhard, John Michael
Item Type: Refine your search to only Thesis or Dissertation
Partner: UNT Libraries
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Photocatalytic and Chemical Oxidation of Organic Compounds in Supercritical Carbon Dioxide

Description: Determine if photocatalytic or other clean oxidation chemistry can be applied to the removal of organic or inorganic contaminants that are introduced into supercritical carbon dioxide during its use as an extraction and cleaning medium in DOE environmental and waste minimization applications. The targets are those contaminants left in solution after the bulk of the solutes have been separated from the fluid phase by changing pressure and/or temperature (but not evaporating the CO2). This is app… more
Date: July 13, 1999
Creator: Blake, D. M.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
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NICE3 SO3 Cleaning Process in Semiconductor Manufacturing

Description: This fact sheet explains how Anon, Inc., has developed a novel method of removing photoresist--a light-sensitive material used to produce semiconductor wafers for computers--from the computer manufacturing process at reduced cost and greater efficiency. The new technology is technically superior to existing semiconductor cleaning methods and results in reduced use of hazardous chemicals.
Date: January 29, 1999
Creator: Blazek, S.
Item Type: Refine your search to only Book
Partner: UNT Libraries Government Documents Department
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Direct Simulation of Ion Beam Induced Stressing and Amorphization of Silicon

Description: Using molecular dynamics (MD) simulation, the authors investigate the mechanical response of silicon to high dose ion-irradiation. The authors employ a realistic model to directly simulate ion beam induced amorphization. Structural properties of the amorphized sample are compared with experimental data and results of other simulation studies. The authors find the behavior of the irradiated material is related to the rate at which it can relax. Depending upon the ability to deform, the authors o… more
Date: May 2, 1999
Creator: Beardmore, K.M. & Gronbech-Jensen, N.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
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Use of very-high-frequency plasmas to prepare a-Si:H-based triple-junction solar cells at high deposition rates: Annual technical status report, 11 March 1998--11 March 1999

Description: This report describes work performed by Energy Conversion Devices, Inc. (ECD) during this phase of this subcontract. ECD researchers have made significant progress in advancing the very high frequency (VHF), high-rate technology. They demonstrated that 8.0% stable efficiencies can be achieved for a-Si:H cells whose i-layers are prepared at rates near 10 {angstrom}/s using the VHF technique. Presently, there is not a great difference in the performance of a-Si:H cells made using the VHF techniqu… more
Date: October 25, 1999
Creator: Jones, S. J.; Liu, T.; Tsu, D. & Izu, M.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
open access

Predicting Low Energy Dopant Implant Profiles in Semiconductors using Molecular Dynamics

Description: The authors present a highly efficient molecular dynamics scheme for calculating dopant density profiles in group-IV alloy, and III-V zinc blende structure materials. Their scheme incorporates several necessary methods for reducing computational overhead, plus a rare event algorithm to give statistical accuracy over several orders of magnitude change in the dopant concentration. The code uses a molecular dynamics (MD) model to describe ion-target interactions. Atomic interactions are described … more
Date: May 2, 1999
Creator: Beardmore, K.M. & Gronbech-Jensen, N.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
open access

Novel Materials for Photovoltaic Technologies: Preprint

Description: While existing photovoltaic technologies continue to advance, there are still many exciting opportunities in the area of novel materials. These opportunities arise because there is a substantial need for reducing the costs associated with the preparation and processing of photovoltaics, and because the theoretically possible photovoltaic efficiencies have yet to be achieved in practical devices. Thus it remains reasonable to continue photovoltaic research activity aimed at entirely new approach… more
Date: April 1, 1999
Creator: Alivisatos, P.; Carter, S.; Ginley, D.; Nozik, A.; Meyer, G. & Rosenthal, S.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
open access

An Adaptive Linearization Method for a Constraint Satisfaction Problem in Semiconductor Device Design Optimization

Description: The device optimization is a very important element in semiconductor technology advancement. Its objective is to find a design point for a semiconductor device so that the optimized design goal meets all specified constraints. As in other engineering fields, a nonlinear optimizer is often used for design optimization. One major drawback of using a nonlinear optimizer is that it can only partially explore the design space and return a local optimal solution. This dissertation provides an adaptiv… more
Date: May 1999
Creator: Chang, Chih-Hui, 1967-
Item Type: Refine your search to only Thesis or Dissertation
Partner: UNT Libraries
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Alternative Gate Dielectrics on Semiconductors for MOSFET Device Applications

Description: We have investigated the synthesis and properties of deposited oxides on Si and Ge for use as alternative gate dielectrics in MOSFET applications. The capacitance and leakage current behavior of polycrystalline Y{sub 2}O{sub 3} films synthesized by pulsed-laser deposition is reported. In addition, we also discuss the growth of epitaxial oxide structures. In particular, we have investigated the use of silicide termination for oxide growth on (001) Si using laser-molecular beam epitaxy. In additi… more
Date: December 6, 1999
Creator: Norton, D. P.; Budai, J. D.; Chisholm, M. F.; Pennycook, S. J.; McKee, R.; Walker, F. et al.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
open access

Magnetic Semiconductor Quantum Wells in High Fields to 60 Tesla: Photoluminescence Linewidth Annealing at Magnetization Steps

Description: Magnetic semiconductors offer a unique possibility for strongly tuning the intrinsic alloy disorder potential with applied magnetic field. We report the direct observation of a series of step-like reductions in the magnetic alloy disorder potential in single ZnSe/Zn(Cd,Mn)Se quantum wells between O and 60 Tesla. This disorder, measured through the linewidth of low temperature photoluminescence spectra drops abruptly at -19, 36, and 53 Tesla, in concert with observed magnetization steps. Convent… more
Date: May 24, 1999
Creator: Awschalom, D.D.; Crooker, S.A.; Lyo, S.K.; Rickel, D.G. & Samarth, N.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
open access

Nitrogen-Induced Modification of the Electronic Structure of Group III-N-V Alloys: Preprint

Description: Incorporation of nitrogen in conventional III-V compound semiconductors to form III-N-V alloys leads to a splitting of the conduction band into two nonparabolic sub-bands. The splitting can be described in terms of an anticrossing interaction between a narrow band of localized nitrogen states and the extended conduction-band states of the semiconductor matrix. The downward shift of the lower sub-band edge is responsible for the N-induced reduction of the fundamental band-gap energy. The modific… more
Date: April 1, 1999
Creator: Walukiewicz, W.; Shan, W.; Ager, J. W., III; Chamberlin, D. R.; Haller, E. E. (Lawrence Berkeley National Laboratory); Geisz, J. F. et al.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
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