Field Dependent Dopant Deactivation in Bipolar Devices at Elevated irradiation Temperatures
Description:
Metal-oxide-silicon capacitors fabricated in a bi-polar process were examined for densities of oxide trapped charge, interface traps and deactivated substrate acceptors following high-dose-rate irradiation at 100 C. Acceptor neutralization near the Si surface occurs most efficiently for small irradiation biases in depletion. The bias dependence is consistent with compensation and passivation mechanisms involving the drift of H{sup +} ions in the oxide and Si layers and the availability of holes…
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Date:
August 15, 2000
Creator:
WITCZAK,STEVEN C.; LACOE,RONALD C.; SHANEYFELT,MARTY R.; MAYER,DONALD C.; SCHWANK,JAMES R. & WINOKUR,PETER S.
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