Development of Key Technologies for White Lighting Based on Light-Emitting Diodes (LEDs)
Description:
This program was organized to focus on materials development issues critical to the acceleration of solid-state lighting, and was split into three major thrust areas: (1) study of dislocation density reduction for GaN grown on sapphire using 'cantilever epitaxy', and the impact of dislocation density on the performance of state-of-the-art high-power LEDs; (2) the evaluation of in situ techniques for monitoring gas phase chemistry and the properties of GaN-based layers during metal-organic vapor…
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Date:
March 31, 2004
Creator:
Goetz, Werner; Imler, Bill; Kim, James; Kobayashi, Junko; Kim, Andrew; Krames, Mike et al.
Item Type:
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Partner:
UNT Libraries Government Documents Department