Minority carrier diffusion, defects, and localization in InGaAsN with 2% nitrogen
Description:
Electron and hole transport in compensated, InGaAsN ({approx} 2% N) are examined through Hall mobility, photoconductivity, and solar cell photoresponse measurements. Short minority carrier diffusion lengths, photoconductive-response spectra, and doping dependent, thermally activated Hall mobilities reveal a broad distribution of localized states. At this stage of development, lateral carrier transport appears to be limited by large scale (>> mean free path) material inhomogeneities, not a…
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Date:
May 3, 2000
Creator:
Kurtz, Steven R.; Allerman, Andrew A.; Seager, Carleton H.; Sieg, Robert M. & Jones, Eric D.
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UNT Libraries Government Documents Department