Comparison of AlxGa1-xN films grown on sapphire by MBE underN-rich and Ga-rich conditions
Description:
Al{sub x}Ga{sub 1-x}N layers grown under N-rich and Ga-rich conditions were investigated using transmission electron microscopy (TEM) and photoluminescence (PL). Despite a high density of threading dislocations ({approx}10{sup 10} cm{sup -2}) these layers had high PL quantum efficiencies. Both, TEM and PL studies showed significant differences between layers grown under N- and Ga-rich conditions. The results indicate that edge dislocations do contribute to nonradiative recombination in Al{sub x…
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Date:
October 15, 2002
Creator:
Jasinski, J.; Liliental-Weber, Z.; He, L.; Reshchikov, M.A. & Morkoc, H.
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