6 Matching Results

Search Results

Advanced search parameters have been applied.
in subjects: "Algan"  
Results: 1 - 6
open access

Radiation Hard AlGaN Detectors and Imager

Description: Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.
Date: May 1, 2012
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
open access

The Structural Quality of AlxGa1-xN Epitaxial Layers Grown by Digitally-AlloyedModulated Precursor Epitaxy Determined by Transmission Electron Microscopy

Description: Al(x)Ga(1-x)N layers of varying composition (0.5<x(Al)<1.0) grown in the digitally-alloyed modulated precursor epitaxial regime employing AlN and GaN binary sub-layers by metalorganic chemical vapor deposition on AlN templates were characterized by transmission electron microscopy techniques. Fine lamellae were observed in bright field images that indicate a possible variation in composition due to the modulated nature of growth. In higher Ga content samples (x(Al)<0.75), a composition… more
Date: October 13, 2008
Creator: Hawkridge, M. E.; Liliental-Weber, Zuzanna; Kim, Hee Jin; Choi, S.; Yoo, D.; Ryou, Jae-Hyun et al.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
open access

AlGaN UV LED and Photodiodes Radiation Hardness and Space Qualifications and Their Applications in Space Science and High Energy Density Physics

Description: This presentation provides an overview of robust, radiation hard AlGaN optoelectronic devices and their applications in space exploration & high energy density physics. Particularly, deep UV LED and deep UV photodiodes are discussed with regard to their applications, radiation hardness and space qualification. AC charge management of UV LED satellite payload instruments, which were to be launched in late 2012, is covered.
Date: May 31, 2011
Creator: Sun, K. X.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
open access

Simulation of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors performances: Limiting factors and optimum design

Description: The performance capabilities of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors have been investigated by using a drift-diffusion transport model. Numerical results have been employed to study the effect of the p-type Mg doping and its incomplete ionization on device performance. The high base resistance induced by the deep acceptor level is found to be the cause of limited current gain values for Npn devices. Several computation approaches have been considered to improve their perform… more
Date: April 25, 2000
Creator: MONIER,C.; REN,F.; HAN,JUNG; CHANG,PING-CHIH; SHUL,RANDY J.; LEE,K.P. et al.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
open access

Role of defects in III-nitride based electronics

Description: The LDRD entitled ``Role of Defects in III-Nitride Based Devices'' is aimed to place Sandia National Laboratory at the forefront of the field of GaN materials and devices by establishing a scientific foundation in areas such as material growth, defect characterization/modeling, and processing (metalization and etching) chemistry. In this SAND report the authors summarize their studies such as (1) the MOCVD growth and doping of GaN and AlGaN, (2) the characterization and modeling of hydrogen in … more
Date: January 1, 2000
Creator: Han, Jung; Myers, Samuel M., Jr.; Follstaedt, David M.; Wright, Alan F.; Crawford, Mary H.; Lee, Stephen R. et al.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
open access

AlGaN Materials Engineering for Integrated Multi-Function Systems

Description: This LDRD is aimed to place Sandia at the forefront of GaN-based technologies. Two important themes of this LDRD are: (1) The demonstration of novel GaN-based devices which have not yet been much explored and yet are coherent with Sandia's and DOE's mission objectives. UV optoelectronic and piezoelectric devices are just two examples. (2) To demonstrate front-end monolithic integration of GaN with Si-based microelectronics. Key issues pertinent to the successful completion of this LDRD have bee… more
Date: January 1, 2001
Creator: HAN, JUNG; MITCHELL, CHRISTINE C.; WALDRIP, KAREN NMN; GUILINGER, TERRY R.; KELLY, MICHAEL J.; FLEMING, JAMES G. et al.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
Back to Top of Screen