Description: Semiconductor nuclear radiation detectors are usually operated in a full depletion mode and blocking contacts are required to maintain low leakage currents and high electric fields for charge collection. Blocking contacts on Ge detectors typically consist of n-type contacts formed by lithium diffusion and p-type contacts formed by boron ion implantation. Electrical contacts formed using sputtered amorphous Ge (a-Ge) films on high-purity Ge crystals were found to exhibit good blocking behavior in both polarities with low leakage currents. The a-Ge contacts have thin dead layers associated with them and can be used in place of lithium-diffused, ion-implanted or Schottky barrier contacts on Ge radiation detectors. Multi-electrode detectors can be fabricated with very simple processing steps using these contacts. 12 refs.
Date: October 1, 1991
Creator: Luke, P.N.; Cork, C.P.; Madden, N.W.; Rossington, C.S. & Wesela, M.F.
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