Photoluminescence Studies of Lateral Composition Modulated Short-Period AlAs/InAs Superlattices
Description:
We present low temperature photoluminescence data for a series of spontaneous lateral composition modulation in (AlAs){sub m}/(InAs){sub n} short period superlattices on InP with differing average lattice constants, i.e., varying global strain. The low temperature photoluminescence peak energies were found to be much lower than the corresponding energy expected for the equivalent In{sub x}Al{sub 1{minus}x}As alloy. The bandgap energy reductions are found to approach 500 meV and this reduction i…
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Date:
January 4, 1999
Creator:
Ahrenkiel, S. P.; Follstaedt, D. M.; Jones, E. D.; Lee, S. R.; Mascarenhas, A.; Mirecki-Millunchick, J. et al.
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