Theory of High Frequency Rectification by Silicon Crystals
Description:
The excellent performance of British ''red dot'' crystals is explained as due to the knife edge contact against a polished surface. High frequency rectification depends critically on the capacity of the rectifying boundary layer of the crystal. C. For high conversion efficiency, the product of this capacity and of the ''forward'' (bulk) resistance R{sub b} of the crystal must be small. For a knife edge, this product depends primarily on the breadth of the knife edge and very little upon its len…
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Date:
October 29, 1942
Creator:
Bethe, H. A.
Partner:
UNT Libraries Government Documents Department