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Effects of structural defects on the activation of sulfur donors in GaN/x/As/1-x/ formed by N implantation

Description: The effects of structural defects on the electrical activity of S doped GaN{sub x}As{sub 1-x} layers formed by S and N coimplantation in GaAs are reported. S and N ions were implanted to the depth of about 0.4 {micro}m. Electrochemical capacitance voltage measurements on samples annealed at 945 C for 10s show that in a thin (<0.1 {micro}m) surface layer the concentration of active shallow donors is almost an order of magnitude larger in S and N co-implanted samples than in samples implanted … more
Date: July 16, 2001
Creator: Jasinski, J.; Yu, K.M.; Walukiewicz, W.; Liliental-Weber, Z. & Washburn, J.
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Partner: UNT Libraries Government Documents Department
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