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in creator/contributor: "Vernon, S P"  
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RadSensor: Xray Detection by Direct Modulation of an Optical Probe Beam

Description: We present a new x-ray detection technique based on optical measurement of the effects of x-ray absorption and electron hole pair creation in a direct band-gap semiconductor. The electron-hole pairs create a frequency dependent shift in optical refractive index and absorption. This is sensed by simultaneously directing an optical carrier beam through the same volume of semiconducting medium that has experienced an xray induced modulation in the electron-hole population. If the operating wavelen… more
Date: August 1, 2003
Creator: Lowry, M. E.; Bennett, C. V.; Vernon, S. P.; Bond, T.; Welty, R.; Behymer, E. et al.
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Partner: UNT Libraries Government Documents Department
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X-ray bang-time and fusion reaction history at ~ps resolution using RadOptic detection

Description: We report recent progress in the development of RadOptic detectors, radiation to optical converters, that rely upon x-ray absorption induced modulation of the optical refractive index of a semiconductor sensor medium to amplitude modulate an optical probe beam. The sensor temporal response is determined by the dynamics of the electron-hole pair creation and subsequent relaxation in the sensor medium. Response times of a few ps have been demonstrated in a series of experiments conducted at the L… more
Date: May 1, 2012
Creator: Vernon, S. P.; Lowry, M. E.; Baker, K. L.; Bennett, C. V.; Celeste, J. R.; Cerjan, C. et al.
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Partner: UNT Libraries Government Documents Department
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Thermal stability of Mo/Si multilayers

Description: The thermal stability of Mo/Si multilayers for x-ray mirror applications was investigated by annealing studies at relatively low temperatures for various times. The as-deposited and annealed multilayers were examined using conventional small and large angle x-ray diffraction, normal incidence x-ray reflectance measurements using a synchrotron source, selected area electron diffraction, and high-resolution electron microscopy. The as-deposited structure consists of pure layers of crystalline Mo … more
Date: July 1, 1991
Creator: Rosen, R.S.; Stearns, D.G. (Lawrence Livermore National Lab., CA (United States)); Viliardos, M.A.; Kassner, M.E. (Oregon State Univ., Corvallis, OR (United States). Dept. of Mechanical Engineering) & Vernon, S.P. (Vernon Applied Physics, Torrance, CA (United States))
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Partner: UNT Libraries Government Documents Department
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Masks for extreme ultraviolet lithography

Description: In extreme ultraviolet lithography (EUVL), the technology specific requirements on the mask are a direct consequence of the utilization of radiation in the spectral region between 10 and 15 nm. At these wavelengths, all condensed materials are highly absorbing and efficient radiation transport mandates the use of all-reflective optical systems. Reflectivity is achieved with resonant, wavelength-matched multilayer (ML) coatings on all of the optical surfaces - including the mask. The EUV mask ha… more
Date: September 1, 1998
Creator: Cardinale, G.; Goldsmith, J.; Kearney, P. A.; Larson, C.; Moore, C. E.; Prisbrey, S. et al.
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Partner: UNT Libraries Government Documents Department
open access

Precision optical aspheres for extreme ultraviolet lithography

Description: We have demonstrated significant advances in the production of aspheric optics for extreme ultraviolet lithography. An optic has been fabricated with an aspheric departure of 1.5 {mu}m, a figure error of 0.7 nm rms and a nanoroughness of 0.25 nm rms. Further improvements are required in the figure and nanoroughness to reach high throughput and near diffraction limited performance in an EUVL system. 8 refs., 2 figs.
Date: May 1, 1996
Creator: Kania, D. R.; Gaines, D. P.; Sweeney, D. S.; Sommargren, G. E.; La Fontaine, B.; Vernon, S. P. et al.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
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