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Pyramidal Defects in GaN:Mg Grown with Ga Polarity

Description: Transmission electron microscopy (TEM) studies show formation of different types of Mg-rich defects in GaN. Types of defects strongly depend on crystal growth polarity. For bulk crystals grown with N-polarity, the planar defects are distributed at equal distances (20 unit cells of GaN). For growth with Ga-polarity (for both bulk and MOCVD grown crystals) a different type of defects have been found. These defects are three-dimensional Mg-rich hexagonal pyramids (or trapezoids) with their base on… more
Date: February 15, 2005
Creator: Liliental-Weber, Zuzanna; Tomaszewicz, Tomasz; Zakharov, Dmitri & O'Keefe, Michael A.
Partner: UNT Libraries Government Documents Department
open access

Screw dislocations in GaN

Description: GaN has received much attention over the past few years because of several new applications, including light emitting diodes, blue laser diodes and high-power microwave transistors. One of the biggest problems is a high density of structural defects, mostly dislocations, due to a lack of a suitable lattice-matched substrate since bulk GaN is difficult to grow in large sizes. Transmission Electron Microscopy (TEM) has been applied to study defects in plan-view and cross-sections on samples prepa… more
Date: February 15, 2002
Creator: Liliental-Weber, Zuzanna; Jasinski, Jacek B.; Washburn, Jack & O'Keefe, Michael A.
Partner: UNT Libraries Government Documents Department
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