Self-doping effects in epitaxially grown graphene
Description:
Self-doping in graphene has been studied by examining single-layer epitaxially grown graphene samples with differing characteristic lateral terrace widths. Low energy electron microscopy was used to gain real-space information about the graphene surface morphology, which was compared with data obtained by angle-resolved photoemission spectroscopy to study the effect of the monolayer graphene terrace width on the low energy dispersions. By altering the graphene terrace width, we report significa…
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Date:
September 19, 2008
Creator:
Siegel, David A.; Zhou, Shuyun Y.; El Gabaly, Farid; Fedorov, Alexei V.; Schmid, Andreas K. & Lanzara, Alessandra
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