13.2 nm Table-Top Inspection Microscope for Extreme Ultraviolet Lithography Mask Defect Characterization
Description:
We report on a reflection microscope that operates at 13.2-nm wavelength with a spatial resolution of 55{+-}3 nm. The microscope uses a table-top EUV laser to acquire images of photolithography masks in 20 seconds.
Date:
April 7, 2009
Creator:
Brizuela, F.; Wang, Y.; Brewer, C.; Pedaci, F.; Chao, W.; Anderson, E. et al.
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