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The Effects of Damage on Hydrogen-Implant-Induced Thin-Film Separation from Bulk Silicon Carbide

Description: Exfoliation of Sic by hydrogen implantation and subsequent annealing forms the basis for a thin-film separation process which, when combined with hydrophilic wafer bonding, can be exploited to produce silicon-carbide-on-insulator, SiCOI. Sic thin films produced by this process exhibit unacceptably high resistivity because defects generated by the implant neutralize electrical carriers. Separation occurs because of chemical interaction of hydrogen with dangling bonds within microvoids created by… more
Date: April 5, 1999
Creator: Gregory, R. B.; Holland, O. W.; Thomas, D. K.; Wetteroth, T. A. & Wilson, S. R.
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Partner: UNT Libraries Government Documents Department
open access

Using heavy ion backscattering spectrometry (HIBS) to solve integrated circuit manufacturing problems

Description: Heavy Ion Backscattering Spectrometry (HIBS) is a new IBA tool for measuring extremely low levels of surface contamination on very pure substrates, such as Si wafers used in the manufacture of integrated circuits. HIBS derives its high sensitivity through the use of moderately low energy ({approximately} 100 keV) heavy ions (e.g., C{sup 12}) to boost the RBS cross-section to levels approaching 1,000 barns, and by using specially designed time-of-flight detectors which have been optimized to pro… more
Date: December 1, 1997
Creator: Banks, J. C.; Doyle, B. L.; Knapp, J. A.; Werho, D.; Gregory, R. B.; Anthony, M. et al.
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Partner: UNT Libraries Government Documents Department
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