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in creator/contributor: "Gaines, D.P."

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Advanced source studies on laser produced plasmas for EUV lithography

Laser-produced plasmas are source candidates for EUV lithography. The radiation angular distribution for several target materials is investigated and source debris is characterized.

Date: January 19, 1995

Creator: Spitzer, R. C. & Gaines, D. P.

Item Type: Article

Partner: UNT Libraries Government Documents Department

open access

X-ray characterization of a four-bounce projection system

A four-bounce two-element projection system designed to achieve 0.14 {mu}m resolution over a 1.2 {times} 5 mm{sup 2} ring field has been fabricated. The radiation transport properties of both the individual multilayer-coated optics and the assembled system has been measured. The individual mirror measurements demonstrated that the coatings were within 0.03 nm of d-spacing specifications; however, the mirrors exhibited significant scatter which reduced reflectance below the design specification … more

Date: January 19, 1995

Creator: Gaines, D. P.; Vernon, S. P.; Sommargren, G. E. & Fuchs, D.

Item Type: Article

Partner: UNT Libraries Government Documents Department

open access

Characterization of SAL605 negative resist at {lambda}=13 nm

We have characterized the response of the negative resist SAL605 in the extreme ultraviolet ({lambda}=13 nm). The sensitivity was found to be {approx}1 mJ/cm{sup 3} for all conditions studied. We have identified processing conditions leading to high ({gamma}{gt}4) contrast. The resist response was modeled using Prolith/2 and the development parameters were obtained from the exposure curves.

Date: May 24, 1996

Creator: La Fontaine, B.; Ciarlo, D.; Gaines, D. P. & Kania, D. R.

Item Type: Article

Partner: UNT Libraries Government Documents Department

open access

Coating strategy for enhancing illumination uniformity in a lithographic condenser

A three-element Koehler condenser system has been fabricated, characterized, and integrated into an EUV lithographic system. The multilayer coatings deposited on the optics were designed to provide optimal radiation transport efficiency and illumination uniformity. Extensive EUV characterization measurements performed on the individual optics and follow-on system measurements indicated that the condenser was operating close to design goals. Multilayer d-spacings were within 0.05 nm of specifica… more

Date: January 26, 1995

Creator: Gaines, D. P.; Vernon, S. P.; Sommargren, G. E. & Kania, D. R.

Item Type: Article

Partner: UNT Libraries Government Documents Department

open access

X-ray characterization of a three-element condenser system for soft x-ray projection lithography

A three-element condenser system has been fabricated and coated with multilayer reflectors designed to operate at a wavelength of 13.3 nm. The performance of the condenser system was evaluated by measuring the reflectance of the individual condenser mirrors at normal incidence and modeling the system transport efficiency. Although a transport efficiency of 17% should be attainable with this design, actual condenser performance will be reduced because of d-spacing variations on mirror C2 and sur… more

Date: June 16, 1993

Creator: Gaines, D. P.; Sommargren, G. E.; Vernon, S. P. & English, R. E.

Item Type: Article

Partner: UNT Libraries Government Documents Department

open access

Multilayer coatings for the EUVL front-end test bed

Good illumination uniformity at the mask and wafer planes, and high wafer thoroughput in the EUVL front-end test bed facility at LLNL require graded period multilayer (ML) coatings on several of the optics. The ML deposition was accomplished using a newly developed deposition technique which avoids the use of {open_quotes}uniformity masks{close_quotes} to define the spatial dependence of the ML period variation. The capabilities of the process in providing the specified ML coatings are discusse… more

Date: January 19, 1995

Creator: Vernon, S. P.; Carey, M. J.; Gaines, D. P. & Weber, F. J.

Item Type: Article

Partner: UNT Libraries Government Documents Department

open access

Image degradation from surface scatter in EUV optics

Synchrotron-based 13 nm measurements of scatter from individual mirrors and an assembled imaging system for Extreme Ultraviolet Lithography have been compared to a model of image formation in the presence of scatter. The theory uses a Power Spectral Density description of the constituent optics to describe modifications to the image due to scatter. Reasonable agreement between measurements and theory was obtained for both individual mirrors and the assembled system. 9 refs., 4 figs.

Date: May 28, 1996

Creator: Gaines, D. P.; Daly, T. P.; Stearns, D. G.; LaFontaine, B.; Sweeney, D. W. & Fuchs, D.

Item Type: Report

Partner: UNT Libraries Government Documents Department

open access

Performance of a two-mirror, four-reflection, ring-field optical system at {lambda}=13 nm

Performance of an Extreme Ultraviolet Lithography (EUVL) imaging optic was characterized by printing resolution test images in resist. While features as small as 0.137 {mu}m were successfully printed, a resolution of 0.175 {mu}m better represents the performance of the system over the full 0.9 mm{sup 2} image field. The contrast of the aerial image was estimated to be about 40% or less for the fine features printed. This low contrast value is attributed to a degradation of the modulation transf… more

Date: May 24, 1996

Creator: La Fontaine, B.; Gaines, D. P.; Kania, D. R.; Sommargren, G. E.; Baker, S. L. & Ciarlo, D.

Item Type: Article

Partner: UNT Libraries Government Documents Department

open access

Surface characterization of optics for EUV lithography

The surface topography of optics fabricated for Extreme Ultraviolet Lithography has been measured using a combination of phase-measuring interferometry and atomic force microscopy. Power Spectral Densities were computed over spatial frequencies extending from 2.0{times}10{sup {minus}8} nm{sup {minus}1} to 7.7{times}10{sup {minus}2} nm{sup {minus}1}. Roughness values for frequencies greater than 1.0{times}10{sup {minus}6} were 0.64 nm rms for a spherical optic and 0.95 nm rms for an aspheric opt… more

Date: May 28, 1996

Creator: Gaines, D. P.; Sweeney, D. W.; DeLong, K. W.; Vernon, S. P.; Baker, S. L.; Tichenor, D. A. et al.

Item Type: Report

Partner: UNT Libraries Government Documents Department

open access

Measuring the effect of scatter on the performance of a lithography system

The distribution of scattered light at the image plane of an extreme ultraviolet lithography (EUVL) system was measured, in situ. These measurements revealed a significant degradation of the modulation transfer function of the imaging optic, relative to its value in the absence of scattering.

Date: May 24, 1996

Creator: La Fontaine, B.; Daly, T. P.; Chapman, H. N.; Gaines, D. P.; Stearns, D. G.; Sweeney, D. W. et al.

Item Type: Article

Partner: UNT Libraries Government Documents Department

open access

High average power laser for EUV lithography

We have demonstrated the operation of a high average power, all solid state laser and target system for EUV lithography. The laser operates at 1.06 {mu}m with a pulse repetition rate of 200 Hz. Each pulse contains up to 400 mJ of energy and is less than 10 ns in duration. The ELTV conversion efficiency measured with the laser is independent of the laser repetition rate. Operating at 200 Hz, the laser has been used for lithography using a 3 bounce Kohler illuminator.

Date: January 19, 1995

Creator: Kania, D. R.; Gaines, D. P.; Hermann, M.; Honig, J.; Hostetler, R.; Levesque, R. et al.

Item Type: Article

Partner: UNT Libraries Government Documents Department

open access

Broadband diffractive lens

Significant progress has been made toward solving the century-old problem of chromatic aberrations in diffractive optics. Our approach exploits modern materials and microfabrication technology and is very different from the purely diffractive strategy,'' which is commonly employed and which results in multiple diffractive elements separated by a finite distance. We have developed a Fresnel zone plate lens comprised of a serial stack of patterned minus-filters which allows broadband radiation to… more

Date: May 28, 1991

Creator: Ceglio, N. M.; Hawryluk, A. M.; London, R. A.; Seppala, L. G. (Lawrence Livermore National Lab., CA (USA)) & Gaines, D. P. (Brigham Young Univ., Provo, UT (USA))

Item Type: Article

Partner: UNT Libraries Government Documents Department

open access

Precision optical aspheres for extreme ultraviolet lithography

We have demonstrated significant advances in the production of aspheric optics for extreme ultraviolet lithography. An optic has been fabricated with an aspheric departure of 1.5 {mu}m, a figure error of 0.7 nm rms and a nanoroughness of 0.25 nm rms. Further improvements are required in the figure and nanoroughness to reach high throughput and near diffraction limited performance in an EUVL system. 8 refs., 2 figs.

Date: May 1, 1996

Creator: Kania, D. R.; Gaines, D. P.; Sweeney, D. S.; Sommargren, G. E.; La Fontaine, B.; Vernon, S. P. et al.

Item Type: Report

Partner: UNT Libraries Government Documents Department