Description: Silicon oxides thermally grown in H/sub 2/O, O/sub 2/, HCl/O/sub 2/ and Cl/sub 2//O/sub 2/ ambients were analyzed, via /sup 1/H(/sup 19/F,..cap alpha gamma..)/sup 16/O nuclear reaction and SIMS, for the presence of hydrogen. In addition, those oxides grown in HCl/O/sub 2/ and Cl/sub 2//O/sub 2/ ambients were analyzed with SIMS for the presence of chlorine. The SIMS data show that the hydrogen levels in these oxides were below the limit of detection for nuclear reaction experiments. The /sup 35/Cl/sup +/ depth-profiles show that chlorine is enriched at the SiO/sub 2/ interface for the HCl/O/sub 2/ grown oxides while it is more evenly distributed in oxide bulk in the Cl/sub 2//O/sub 2/ grown samples.
Date: January 1, 1980
Creator: Tsong, I.S.T.; Monkowski, M.D.; Monkowski, J.R.; Miller, P.D.; Moak, C.D.; Appleton, B.R. et al.
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