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in creator/contributor: "Herner, S.B."  
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Boron-enhanced-diffusion of boron: The limiting factor for ultra-shallow junctions

Description: Reducing implant energy is an effective way to eliminate transient enhanced diffusion (TED) due to excess interstitials from the implant. It is shown that TED from a fixed Si dose implanted at energies from 0.5 to 20 keV into boron doping-superlattices decreases linearly with decreasing Si ion range, virtually disappearing at sub-keV energies. However, for sub-keV B implants diffusion remains enhanced and x{sub j} is limited to {ge} 100 nm at 1,050 C. The authors term this enhancement, which ar… more
Date: December 1, 1997
Creator: Agarwal, A.; Eaglesham, D.J.; Gossmann, H.J.; Pelaz, L.; Herner, S.B.; Jacobson, D.C. et al.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
open access

Boron-enhanced diffusion of boron from ultralow-energy boron implantation

Description: The authors have investigated the diffusion enhancement mechanism of BED (boron enhanced diffusion), wherein the boron diffusivity is enhanced three to four times over the equilibrium diffusivity at 1,050 C in the proximity of a silicon layer containing a high boron concentration. It is shown that BED is associated with the formation of a fine-grain polycrystalline silicon boride phase within an initially amorphous Si layer having a high B concentration. For 0.5 keV B{sup +}, the threshold impl… more
Date: May 3, 1998
Creator: Agarwal, A.; Eaglesham, D.J.; Gossmann, H.J.; Pelaz, L.; Herner, S.B.; Jacobson, D.C. et al.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
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