Focused Ion Beam Induced Effects on MOS Transistor Parameters
Description:
We report on recent studies of the effects of 50 keV focused ion beam (FIB) exposure on MOS transistors. We demonstrate that the changes in value of transistor parameters (such as threshold voltage, V{sub t}) are essentially the same for exposure to a Ga+ ion beam at 30 and 50 keV under the same exposure conditions. We characterize the effects of FIB exposure on test transistors fabricated in both 0.5 {micro}m and 0.225 {micro}m technologies from two different vendors. We report on the effectiv…
more
Date:
July 28, 1999
Creator:
Abramo, Marsha T.; Antoniou, Nicholas; Campbell, Ann N.; Fleetwood, Daniel M.; Hembree, Charles E.; Jessing, Jeffrey R. et al.
Item Type:
Refine your search to only
Article
Partner:
UNT Libraries Government Documents Department