III-Nitride Dry Etching - Comparison of Inductively Coupled Plasma Chemistries
Description:
A systematic study of the etch characteristics of GaN, AlN and InN has been performed with boron halides- (BI{sub 3} and BBr{sub 3}) and interhalogen- (ICl and IBr) based Inductively Coupled Plasmas. Maximum etch selectivities of -100:1 were achieved for InN over both GaN and AlN in the BI{sub 3} mixtures due to the relatively high volatility of the InN etch products and the lower bond strength of InN. Maximum selectivies of- 14 for InN over GaN and >25 for InN over AlN were obtained with ICl a…
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Date:
November 10, 1998
Creator:
Abernathy, C.R.; Cho, H.; Donovan, S.M.; Hahn, Y-B.; Han, J.; Hays, D.C. et al.
Partner:
UNT Libraries Government Documents Department