Description: A model for explaining the growth, H incorporation and bandgap data in a-Si deposited from (SiF/sub 4/ + H/sub 2/) has been developed. It is proposed that the a-Si films are subjected to reactive ion etching and ion bombardment during growth, which may lead to lower defect densities (and hence lower H content) and microcrystallinity in doped films. A morphological study of B-doped a-Si:H has also been carried out. It is found that there are certain regions of pressure, temperature and relative B/sub 2/H/sub 6/ concentrations which lead to agglomerative growth. Study of drift mobility of electrons has continued. We have obtained very high drift mobilities, (approx. 0.8 cm/sup 2//V-sec) on thick films (approx. 3 ..mu..m). Thin films (approx. 1 ..mu..m) have significantly lower mobilities. It is proposed that this phenomenon is due to the existence of a transition layer between the substrate and high quality a-Si. We have continued nip device fabrication in a-Si:H. The following parameters have been obtained individually on cells of 0.24 cm/sup 2/ area. J/sub sc/ (internal) = 12 mA/cm/sup 2/ at 100 mW/cm/sup 2/, V/sub oc/ = 820 mV, and FF = 0.56 are obtained.
Date: January 1, 1980
Creator: Dalal, V.L.
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