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The Performance of Silicon Based Sensor and its Application in Silver Toxicity Studies

Description: The silicon based sensor is able to detect part per trillion ionic silver in 0.0098% hydrofluoric acid based on the open circuit potential (OCP) measurement. The OCP jump of 100 ppt ionic silver solution is up to 120 mV. The complex agent can effectively suppress the ionic silver concentration and suppress the OCP signal. The ability of complex agent to suppress the OCP signal depends on the formation constant of the complex with silver. The complex adsorbed on the sensor surface induces a sec… more
Date: August 2000
Creator: Peng, Haiqing
Item Type: Refine your search to only Thesis or Dissertation
Partner: UNT Libraries
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Hydrogen terminated silicon surfaces: Development of sensors to detect metallic contaminants and stability studies under different environments

Description: Hydrogen terminated silicon surfaces have been utilized to develop sensors for semiconductor and environmental applications. The interaction of these surfaces with different environments has also been studied in detail. The sensor assembly relevant to the semiconductor industry utilizes a silicon-based sensor to detect trace levels of metallic contaminants in hydrofluoric acid. The sensor performance with respect to two non-contaminating reference electrode systems was evaluated. In the fi… more
Date: August 2002
Creator: Ponnuswamy, Thomas Anand
Item Type: Refine your search to only Thesis or Dissertation
Partner: UNT Libraries
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Influence of design and coatings on the mechanical reliability of semiconductor wafers.

Description: We investigate some of the mechanical design factors of wafers and the effect on strength. Thin, solid, pre-stressed films are proposed as a means to improve the bulk mechanical properties of a wafer. Three-point bending was used to evaluate the laser scribe density and chemical processing effect on wafer strength. Drop and strike tests were employed to investigate the edge bevel profile effect on the mechanical properties of the wafer. To characterize the effect of thin films on stren… more
Date: August 2002
Creator: Yoder, Karl J.
Item Type: Refine your search to only Thesis or Dissertation
Partner: UNT Libraries
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Measurement of Lattice Strain and Relaxation Effects in Strained Silicon Using X-ray Diffraction and Convergent Beam Electron Diffraction

Description: The semiconductor industry has decreased silicon-based device feature sizes dramatically over the last two decades for improved performance. However, current technology has approached the limit of achievable enhancement via this method. Therefore, other techniques, including introducing stress into the silicon structure, are being used to further advance device performance. While these methods produce successful results, there is not a proven reliable method for stress and strain measurements o… more
Date: August 2007
Creator: Diercks, David Robert
Item Type: Refine your search to only Thesis or Dissertation
Partner: UNT Libraries
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Interfacial Electrochemistry and Surface Characterization: Hydrogen Terminated Silicon, Electrolessly Deposited Palladium & Platinum on Pyrolyzed Photoresist Films and Electrodeposited Copper on Iridium

Description: Hydrogen terminated silicon surfaces play an important role in the integrated circuit (IC) industry. Ultra-pure water is extensively used for the cleaning and surface preparation of silicon surfaces. This work studies the effects of ultra-pure water on hydrogen passivated silicon surfaces in a short time frame of 120 minutes using fourier transform infrared spectroscopy – attenuated total reflection techniques. Varying conditions of ultra-pure water are used. This includes dissolved oxygen poor… more
Date: December 2003
Creator: Chan, Raymond
Item Type: Refine your search to only Thesis or Dissertation
Partner: UNT Libraries
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Chemistry, Detection, and Control of Metals during Silicon Processing

Description: This dissertation focuses on the chemistry, detection, and control of metals and metal contaminants during manufacturing of integrated circuits (ICs) on silicon wafers. Chapter 1 begins with an overview of IC manufacturing, including discussion of the common aqueous cleaning solutions, metallization processes, and analytical techniques that will be investigated in subsequent chapters. Chapter 2 covers initial investigations into the chemistry of the SC2 clean - a mixture of HCl, H2O2, and DI wa… more
Date: May 2005
Creator: Hurd, Trace Q.
Item Type: Refine your search to only Thesis or Dissertation
Partner: UNT Libraries
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A Novel Process for GeSi Thin Film Synthesis

Description: A unique process of fabricating a strained layer GexSi1-x on insulator is demonstrated. Such strained heterostructures are useful in the fabrication of high-mobility transistors. This technique incorporates well-established silicon processing technology e.g., ion implantation and thermal oxidation. A dilute GeSi layer is initially formed by implanting Ge+ into a silicon-on-insulator (SOI) substrate. Thermal oxidation segregates the Ge at the growing oxide interface to form a distinct GexSi1-x … more
Date: December 2007
Creator: Hossain, Khalid
Item Type: Refine your search to only Thesis or Dissertation
Partner: UNT Libraries
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Investigation of Selected Optically-Active Nanosystems Fashioned using Ion Implantation

Description: Opto-electronic semiconductor technology continues to grow at an accelerated pace, as the industry seeks to perfect devices such as light emitting diodes for purposes of optical processing and communication. A strive for greater efficiency with shrinking device dimensions, continually pushes the technology from both a design and materials aspect. Nanosystems such a quantum dots, also face new material engineering challenges as they enter the realm of quantum mechanics, with each system and ma… more
Date: May 2006
Creator: Mitchell, Lee
Item Type: Refine your search to only Thesis or Dissertation
Partner: UNT Libraries
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Ion-Induced Damage In Si: A Fundamental Study of Basic Mechanisms over a Wide Range of Implantation Conditions

Description: A new understanding of the damage formation mechanisms in Si is developed and investigated over an extended range of ion energy, dose, and irradiation temperature. A simple model for dealing with ion-induced damage is proposed, which is shown to be applicable over the range of implantation conditions. In particular the concept of defect "excesses" will be discussed. An excess exists in the lattice when there is a local surplus of one particular type of defect, such as an interstitial, over i… more
Date: May 2006
Creator: Roth, Elaine Grannan
Item Type: Refine your search to only Thesis or Dissertation
Partner: UNT Libraries

Interfacial Studies of Bimetallic Corrosion in Copper/Ruthenium Systems and Silicon Surface Modification with Organic and Organometallic Chemistry

Description: To form Cu interconnects, dual-damascene techniques like chemical mechanical planarization (CMP) and post-CMP became inevitable for removing the "overburden" Cu and for planarizing the wafer surface. During the CMP processing, Cu interconnects and barrier metal layers experience different electrochemical interactions depending on the slurry composition, pH, and ohmic contact with adjacent metal layers that would set corrosion process. Ruthenium as a replacement of existing diffusion barrier lay… more
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Date: August 2006
Creator: Nalla, Praveen Reddy
Item Type: Refine your search to only Thesis or Dissertation
Partner: UNT Libraries
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Systematic Approaches to Predictive Computational Chemistry using the Correlation Consistent Basis Sets

Description: The development of the correlation consistent basis sets, cc-pVnZ (where n = D, T, Q, etc.) have allowed for the systematic elucidation of the intrinsic accuracy of ab initio quantum chemical methods. In density functional theory (DFT), where the cc-pVnZ basis sets are not necessarily optimal in their current form, the elucidation of the intrinsic accuracy of DFT methods cannot always be accomplished. This dissertation outlines investigations into the basis set requirements for DFT and how the … more
Date: May 2009
Creator: Prascher, Brian P.
Item Type: Refine your search to only Thesis or Dissertation
Partner: UNT Libraries
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Wettability of Silicon, Silicon Dioxide, and Organosilicate Glass

Description: Wetting of a substance has been widely investigated since it has many applications to many different fields. Wetting principles can be applied to better select cleans for front end of line (FEOL) and back end of line (BEOL) cleaning processes. These principles can also be used to help determine processes that best repel water from a semiconductor device. It is known that the value of the dielectric constant in an insulator increases when water is absorbed. These contact angle experiments will d… more
Date: December 2009
Creator: Martinez, Nelson
Item Type: Refine your search to only Thesis or Dissertation
Partner: UNT Libraries
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Study of Silver Deposition on Silicon (100) by IR Spectroscopy and Patina Formation Study of Oxygen Reduction Reaction on Ruthenium or Platinum

Description: To investigate conditions of silver electroless deposition on silicon (100), optical microscope, atomic force microscope (AFM) and attenuated total reflection infrared spectroscopy (ATR-FTIR) spectroscopy were used. Twenty second dipping in 0.8mM AgNO3/4.9% solution coats a silicon (100) wafer with a thin film of silver nanoparticles very well. According to AFM results, the diameter of silver particles is from 50 to 100nm. After deposition, arithmetic average of absolute values roughness (Ra) i… more
Date: August 2009
Creator: Yang, Fan
Item Type: Refine your search to only Thesis or Dissertation
Partner: UNT Libraries
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The Influence of Ohmic Metals and Oxide Deposition on the Structure and Electrical Properties of Multilayer Epitaxial Graphene on Silicon Carbide Substrates

Description: Graphene has attracted significant research attention for next generation of semiconductor devices due to its high electron mobility and compatibility with planar semiconductor processing. In this dissertation, the influences of Ohmic metals and high dielectric (high-k) constant aluminum oxide (Al2O3) deposition on the structural and electrical properties of multi-layer epitaxial graphene (MLG) grown by graphitization of silicon carbide (SiC) substrates have been investigated. Uniform MLG was s… more
Date: May 2011
Creator: Maneshian, Mohammad Hassan
Item Type: Refine your search to only Thesis or Dissertation
Partner: UNT Libraries
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Development of Silicon Nanowire Field Effect Transistors

Description: An economically reliable technique for the synthesis of silicon nanowire was developed using silicon chloride as source material. The 30-40 micron long nanowires were found to have diameters ranging from 40 – 100 nm. An amorphous oxide shell covered the nanowires, post-growth. Raman spectroscopy confirmed the composition of the shell to be silicon-dioxide. Photoluminescence measurements of the as-grown nanowires showed green emission, attributed to the presence of the oxide shell. Etching of th… more
Date: December 2011
Creator: Nukala, Prathyusha
Item Type: Refine your search to only Thesis or Dissertation
Partner: UNT Libraries
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Phonon engineering in nanostructures: Controlling interfacial thermal resistance in multilayer-graphene/dielectric heterojunctions

Description: Article discussing phonon engineering in nanostructures and controlling interfacial thermal resistance in multilayer-graphene/dielectric heterojunctions.
Date: September 13, 2012
Creator: Mao, R.; Kong, Byoung Don; Kim, Ki Wook; Jayasekera, Thushari; Calzolari, Arrigo & Buongiorno Nardelli, Marco
Item Type: Refine your search to only Article
Partner: UNT College of Arts and Sciences
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Projectile-charge-state dependence of target L-shell ionization by 1.86-MeV/amu fluorine and silicon ions and 1.8-MeV/amu chlorine ions

Description: This article discusses projectile-charge-state dependence of target L-shell ionization by 1.86-MeV/amu and silicon ions and 1.8-MeV/amu chlorine ions.
Date: April 1979
Creator: McDaniel, Floyd Del. (Floyd Delbert), 1942-; Toten, R. S.; Peterson, J. L.; Duggan, Jerome L.; Wilson, Scott R.; Gressett, J. D. et al.
Item Type: Refine your search to only Article
Partner: UNT College of Arts and Sciences
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Projectile charge-state dependence of K-shell ionization by silicon ions: A comparison of Coulomb ionization theories for direct ionization and electron capture with x-ray production data

Description: Article discussing projectile charge-state dependence of K-shell ionization by silicon ions and a comparison of Coulomb ionization theories for direct ionization and electron capture with x-ray production data.
Date: October 1977
Creator: McDaniel, Floyd Del. (Floyd Delbert), 1942-; Duggan, Jerome L.; Basbas, George; Miller, P. D. & Lapicki, Gregory
Item Type: Refine your search to only Article
Partner: UNT College of Arts and Sciences
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