Improving the bulk laser-damage resistance of KDP by baking and pulsed-laser irradiation
Description:
Isolated bulk damage centers are produced when KDP crystals are irradiated by 1-ns 1064-nm pulses. We have tested about 100 samples and find the median threshold to be 7 J/cm/sup 2/ when the samples are irradiated only once at each test volume (1-on-1 tests). The median threshold increased to 11 J/cm/sup 2/ when the test volumes were first subjected to subthreshold laser irradiation (n-on-1 tests). We baked several crystals at temperatures from 110 to 165/sup 0/C and remeasured their thresholds…
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Date:
September 16, 1981
Creator:
Swain, J.E.; Stokowski, S.E.; Milam, D. & Rainer, F.
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