Method of preparing high-temperature-stable thin-film resistors
Description:
A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR) is disclosed. Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is …
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Date:
November 12, 1980
Creator:
Raymond, L. S.
Partner:
UNT Libraries Government Documents Department