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Graphene Magnetic Tunnel Junction Spin Filters and Methods of Making

Description: Patent relating to methods of forming a few molecule thick graphene layer on a ferromagnetic layer, at temperatures and conditions consistent with integration with silicon-based complementary metal oxide semiconductors (Si CMOS).
Date: May 25, 2012
Creator: Kelber, Jeffry A. & Zhou, Mi
Partner: UNT College of Arts and Sciences