Selective epitaxy using the GILD process
Description:
The present invention comprises a method of selective epitaxy on a semiconductor substrate. The present invention provides a method of selectively forming high quality, thin GeSi layers in a silicon circuit, and a method for fabricating smaller semiconductor chips with a greater yield (more error free chips) at a lower cost. The method comprises forming an upper layer over a substrate, and depositing a reflectivity mask which is then removed over selected sections. Using a laser to melt the unm…
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Date:
December 31, 1990
Creator:
Weiner, K. H.
Partner:
UNT Libraries Government Documents Department