26 Matching Results

Search Results

Growing carbon nanotubes by chemical vapor deposition technique.

Description: Carbon nanotubes were synthesized in the laboratory using chemical vapor deposition at different methane concentration. I found that a methane concentration of 4 sccm was ideal for well recognizable carbon nanotubes. A higher concentration led to fewer nanotube growth and silicon carbide structure. Coating the sample first with Fe(NO3)3 created a catalyst base on the substrate for the nanotube to adhere and grow on.
Access: This item is restricted to UNT Community Members. Login required if off-campus.
Date: May 2000
Creator: Rajan, Harihar V.
Partner: UNT Libraries

Photoelectric Emission Measurements for CVD Grown Polycrystalline Diamond Films

Description: We examined CVD grown polycrystalline diamond films having different methane concentrations to detect defects and study the possible correlation between the methane concentration used during the growth process and the defect density. SEM and Raman results show that the amorphous and sp2 carbon content of the films increases with methane concentration. Furthermore, photoelectric emission from diamond is confirmed to be a two-photon process, hence the electrons are emitted from normally unoccupied states. We found that the photoelectric yield, for our samples, decreases with the increase in methane concentration. This trend can be accounted for in two different ways: either the types of defects observed in this experiment decrease in density as the methane concentration increases; or, the defect density stays the same or increases, but the increase in methane concentration leads to an increase in the electron affinity, which reduces the overall photoelectric yield.
Date: August 1999
Creator: Hassan, Tarek
Partner: UNT Libraries

Growth and Characterization of β-Iron Disilicide, β-Iron Silicon Germanide, and Osmium Silicides

Description: The semiconducting silicides offer significant potential for use in optoelectronic devices. Full implementation of the materials, however, requires the ability to tailor the energy gap and band structure to permit the synthesis of heterojunctions. One promising approach is to alloy the silicides with Ge. As part of an investigation into the synthesis of semiconducting silicide heterostructures, a series of β-Fe(Si1−xGex)2 epilayer samples, with nominal alloy content in the range 0 < x < 0.15, have been prepared by molecular beam epitaxy on Si(100). I present results of the epitaxial and crystalline quality of the films, as determined by reflection high-energy electron diffraction, Rutherford backscattering spectroscopy, and double crystal x-ray diffraction, and of the band gap dependence on the alloy composition, as determined by Fourier transform infrared spectroscopy. A reduction in band gap was observed with increasing Ge content, in agreement with previous theoretical predictions. However Ge segregation was also observed in β-Fe(Si1−xGex)2 epilayers when x > 0.04. Osmium silicide films have been grown by molecular beam epitaxy on Si(100). The silicides have been grown using e-beam evaporation sources for both Os and Si onto Si(100) substrates at varying growth rates and temperatures ranging from 600-700ºC. The resulting films have been analyzed using reflection high-energy electron diffraction, Raman spectroscopy, reflectivity measurements, in-plane and out of plane X-ray diffraction and temperature dependent magnetotransport. A change in crystalline quality is observed with an increase in Si overpressure. For a lower silicon to osmium flux ration (JSi/JOs=1.5) both OsSi2 and Os2Si3 occur, whereas with a much larger Si overpressure (JSi/JOs>4), crystalline quality is greatly increased and only a single phase, Os2Si3, is present. The out-of-plane X-ray diffraction data show that the film grows along its [4 0 2] direction, with a good crystal quality as evidenced by the small FWHM in the rocking curve. ...
Date: August 2009
Creator: Cottier, Ryan James
Partner: UNT Libraries

Survey of Approximation Algorithms for Set Cover Problem

Description: In this thesis, I survey 11 approximation algorithms for unweighted set cover problem. I have also implemented the three algorithms and created a software library that stores the code I have written. The algorithms I survey are: 1. Johnson's standard greedy; 2. f-frequency greedy; 3. Goldsmidt, Hochbaum and Yu's modified greedy; 4. Halldorsson's local optimization; 5. Dur and Furer semi local optimization; 6. Asaf Levin's improvement to Dur and Furer; 7. Simple rounding; 8. Randomized rounding; 9. LP duality; 10. Primal-dual schema; and 11. Network flow technique. Most of the algorithms surveyed are refinements of standard greedy algorithm.
Date: December 2009
Creator: Dutta, Himanshu Shekhar
Partner: UNT Libraries

Nonlinear UV Laser Build-up Cavity: An Efficient Design

Description: Using the concept of the build-up cavity for second harmonic generation to produce 243nm laser light, an innovative cavity is theoretically explored using a 15mm length CLBO crystal. In order to limit the losses of the cavity, the number of effective optical surfaces is kept to only four and the use of a MgF2 crystal is adopted to separate the harmonic and fundamental laser beam from each other. The cavity is shown to have an expected round trip loss of five tenths of a percent or better, resulting in a conversion efficiency greater than 65%.
Date: May 2009
Creator: Rady, Nicholas Henry
Partner: UNT Libraries

Highly Efficient Single Frequency Blue Laser Generation by Second Harmonic Generation of Infrared Lasers Using Quasi Phase Matching in Periodically Poled Ferroelectric Crystals

Description: Performance and reliability of solid state laser diodes in the IR region exceeds those in the visible and UV part of the light spectrum. Single frequency visible and UV laser diodes with higher than 500 mW power are not available commercially. However we successfully stabilized a multi-longitudinal mode IR laser to 860 mW single frequency. This means high efficiency harmonic generation using this laser can produce visible and UV laser light not available otherwise. In this study we examined three major leading nonlinear crystals: PPMgO:SLN, PPKTP and PPMgO:SLT to generate blue light by second harmonic generation. We achieved record high net conversion efficiencies 81.3% using PPMgO:SLT (~500 mW out), and 81.1% using PPKTP (~700 mW out). In both these cases an external resonance buildup cavity was used. We also studied a less complicated single pass waveguide configuration (guided waist size of ~ 5 um compared to ~60 um) to generate blue. With PPMgO:SLN we obtained net 40.4% and using PPKT net 6.8% (110mW and 10.1 mW respectively).
Date: August 2014
Creator: Khademian, Ali
Partner: UNT Libraries

The Effects of Cesium Deposition and Gas Exposure on the Field Emission Properties of Single Wall and Multiwall Carbon Nanotubes

Description: The effects of Cs deposition on the field emission (FE) properties of single-walled carbon nanotube (SWNT) bundles were studied. In addition, a comparative study was made on the effects of O2, Ar and H2 gases on the field emission properties of SWNT bundles and multiwall carbon nanotubes (MWNTs). We observed that Cs deposition decreases the turn-on field for FE by a factor of 2.1 - 2.9 and increases the FE current by 6 orders of magnitude. After Cs deposition, the FE current versus voltage (I-V) curves showed non-Fowler-Nordheim behavior at large currents consistent with tunneling from adsorbate states. At lower currents, the ratio of the slope of the FE I-V curves before and after Cs deposition was approximately 2.1. Exposure to N2 does not decrease the FE current, while exposure to O2 decreases the FE current. Our results show that cesiated SWNT bundles have great potential as economical and reliable vacuum electron sources. We find that H2 and Ar gases do not significantly affect the FE properties of SWNTs or MWNTs. O2 temporarily reduces the FE current and increases the turn-on voltage of SWNTs. Full recovery of these properties occurred after operation in UHV. The higher operating voltages in an O2 environment caused a permanent decrease of FE current and increase in turn-on field of MWNTs. The ratios of the slopes before and after O2 exposure were approximately 1.04 and 0.82 for SWNTs and MWNTs, respectively. SWNTs compared to MWNTs would appear to make more economical and reliable vacuum electron sources.
Date: May 2002
Creator: Wadhawan, Atul
Partner: UNT Libraries

Enhancements of Mechanical, Thermal Stability, and Tribological Properties by Addition of Functionalized Reduced Graphene Oxide in Epoxy

Description: The effects of octadecylamine-functionalized reduced graphene oxide (FRGO) on the frictional and wear properties of diglycidylether of bisphenol-A (DGEBA) epoxy are studied using a pin-on-disk tribometer. It was observed that the addition of FRGO significantly improves the tribological, mechanical, and thermal properties of epoxy matrix. Graphene oxide (GO) was functionalized with octadecylamine (ODA), and then reduction of oxygen-containing functional groups was carried out using hydrazine monohydrate. The Raman and x-ray photoelectron spectroscopy studies confirm significant reduction in oxygen-containing functional groups and formation of ODA functionalized reduced GO. The nanocomposites are prepared by adding 0.1, 0.2, 0.5 and 1.0 wt % of FRGO to the epoxy. The addition of FRGO increases by more than an order of magnitude the sliding distance during which the dynamic friction is ≤ 0.1. After this distance, the friction sharply increases to the range of 0.4 - 0.5. We explain the increase in sliding distance during which the friction is low by formation of a transfer film from the nanocomposite to the counterface. The wear rates in the low and high friction regimes are approximately 1.5 x 10-4 mm3/N·m and 5.5 x 10-4 mm3/N·m, respectively. The nanocomposites exhibit a 74 % increase in Young’s modulus with 0.5 wt. % of FRGO, and an increase in glass transition and thermal degradation temperatures.
Date: August 2014
Creator: Shah, Rakesh K.
Partner: UNT Libraries

The Effects of Residual Gases on the Field Emission Properties of ZnO, GaN, ZnS Nanostructures, and the Effects of Light on the Resistivity of Graphene

Description: In this dissertation, I present that at a vacuum of 3×10-7 Torr, residual O2, CO2, H2 and Ar exposure do not significantly degrade the field emission (FE) properties of ZnO nanorods, but N2 exposure significantly does. I propose that this could be due to the dissociation of N2 into atomic nitrogen species and the reaction of such species with ZnO. I also present the effects of O2, CO2, H2O, N2, H2, and Ar residual gas exposure on the FE properties of GaN and ZnS nanostructure. A brief review of growth of ZnO, GaN and ZnS is provided. In addition, Cs deposition on GaN nanostructures at ultra-high vacuum results in 30% decrease in turn-on voltage and 60% in work function. The improvement in FE properties could be due to a Cs-induced space-charge layer at the surface that reduces the barrier for FE and lowers the work function. I describe a new phenomenon, in which the resistivity of CVD-grown graphene increases to a higher saturated value under light exposure, and depends on the wavelength of the light—the shorter the wavelength, the higher the resistivity. First-principle calculations and theoretical analysis based on density functional theory show that (1) a water molecule close to a graphene defect is easier to be split than that of the case of no defect existing and (2) there are a series of meta-stable partially disassociated states for an interfacial water molecule. Calculated disassociation energies are from 2.5 eV to 4.6 eV, that match the experimental observation range of light wavelength from visible to 254 nm UV light under which the resistivity of CVD-grown graphene is increased.
Date: May 2014
Creator: Mo, Yudong
Partner: UNT Libraries

Modification of Graphene Properties: Electron Induced Reversible Hydrogenation, Oxidative Etching and Layer-by-layer Thinning

Description: In this dissertation, I present the mechanism of graphene hydrogenation via three different electron sources: scanning electron microscopy, e-beam irradiation and H2 and He plasma irradiation. in each case, hydrogenation occurs due to electron impact fragmentation of adsorbed water vapor from the sample preparation process. in the proposed model, secondary and backscattered electrons generated from incident electron interactions with the underlying silicon substrate are responsible for the dissociation of water vapor. Chemisorbed H species from the dissociation are responsible for converting graphene into hydrogenated graphene, graphane. These results may lead to higher quality graphane films having a larger band gap than currently reported. in addition, the dissertation presents a novel and scalable method of controllably removing single atomic planes from multi-layer graphene using electron irradiation from an intense He plasma under a positive sample bias. As the electronic properties or multi-layer graphene are highly dependent on the number of layers, n, reducing n in certain regions has many benefits. for example, a mask in conjunction with this thinning method could be used for device applications.
Date: May 2012
Creator: Jones, Jason David
Partner: UNT Libraries

Precision Atomic Spectroscopy with an Integrated Electro- Optic Modulator and DBR Diode Laser at 1083nm

Description: We have explored the use of recently developed high speed integrated electro optic modulators and DBR diode lasers as a tool for precision laser studies of atoms. In particular, we have developed a technique using a high speed modulator as a key element and applied it to the study of the fine structure of the 23P state of atomic helium. This state has been of long standing interest in atomic physics and its study has been the aim of several recent experiments using various precision techniques. We present our method and results, which will describe a new method for determining the fine structure constant, and lead to a precision test of atomic theory.
Access: This item is restricted to UNT Community Members. Login required if off-campus.
Date: December 1999
Creator: Castillega, Jaime
Partner: UNT Libraries

Scanning Tunneling Microscopy of Homo-Epitaxial Chemical Vapor Deposited Diamond (100) Films

Description: Atomic resolution images of hot-tungsten filament chemical-vapor-deposition (CVD) grown epitaxial diamond (100) films obtained in ultrahigh vacuum (UHV) with a scanning tunneling microscope (STM) are reported. A (2x1) dimer surface reconstruction and amorphous atomic regions were observed on the hydrogen terminated (100) surface. The (2x1) unit cell was measured to be 0.51"0.01 x 0.25"0.01 nm2. The amorphous regions were identified as amorphous carbon. After CVD growth, the surface of the epitaxial films was amorphous at the atomic scale. After 2 minutes of exposure to atomic hydrogen at 30 Torr and the sample temperature at 500° C, the surface was observed to consist of amorphous regions and (2x1) dimer reconstructed regions. After 5 minutes of exposure to atomic hydrogen, the surface was observed to consist mostly of (2x1) dimer reconstructed regions. These observations support a recent model for CVD diamond growth that is based on an amorphous carbon layer that is etched or converted to diamond by atomic hydrogen. With further exposure to atomic hydrogen at 500° C, etch pits were observed in the shape of inverted pyramids with {111} oriented sides. The temperature dependence of atomic hydrogen etching of the diamond (100) surface was also investigated using UHV STM, and it was found that it was highly temperature dependent. Etching with a diamond sample temperature of 200° C produced (100) surfaces that are atomically rough with no large pits, indicating that the hydrogen etch was isotropic at 200° C. Atomic hydrogen etching of the surface with a sample temperature of 500° C produced etch-pits and vacancy islands indicating an anisotropic etch at 500° C. With a sample temperature of 1000° C during the hydrogen etch, the (100) surface was atomically smooth with no pits and few single atomic vacancies, but with vacancy rows predominantly in the direction of the dimer ...
Access: This item is restricted to UNT Community Members. Login required if off-campus.
Date: May 2000
Creator: Stallcup, Richard E.
Partner: UNT Libraries

Picosecond Dynamics of Free-Carrier Populations, Space-Charge Fields, and Photorefractive Nonlinearities in Zincblende Semiconductors

Description: Generally, nonlinear optics studies investigate optically-induced changes in refraction or absorption, and their application to spectroscopy or device fabrication. The photorefractive effect is a nonlinear optical effect that occurs in solids, where transport of an optically-induced free-carrier population results in an internal space-charge field, which produces an index change via the linear electrooptic effect. The photorefractive effect has been widely studied for a variety of materials and device applications, mainly because it allows large index changes to be generated with laser beams having only a few milliwatts of average power.Compound semiconductors are important photorefractive materials because they offer a near-infrared optical response, and because their carrier transport properties allow the index change to be generated quickly and efficiently. While many researchers have attempted to measure the fundamental temporal dynamics of the photorefractive effect in semiconductors using continuous-wave, nanosecond- and picosecond-pulsed laser beams, these investigations have been unsuccessful. However, studies with this goal are of clear relevance because they provide information about the fundamental physical processes that produce this effect, as well as the material's speed and efficiency limitations for device applications.In this dissertation, for the first time, we time-resolve the temporal dynamics of the photorefractive nonlinearities in two zincblende semiconductors, semi-insulating GaAs and undoped CdTe. While CdTe offers a lattice-match to the infrared material HgxCd1-xTe, semi-insulating GaAs has been widely used in optoelectronic and high-speed electronic applications. We use a novel transient-grating experimental method that allows picosecond temporal resolution and high sensitivity. Our results provide a clear and detailed picture of the picosecond photorefractive response of both materials, showing nonlinearities due to hot-carrier transport and the Dember space-charge field, and a long-lived nonlinearity that is due to the EL2 midgap species in GaAs. We numerically model our experimental results using a general set of equations that describe nonlinear diffraction and ...
Date: August 1999
Creator: Stark, Thomas S.
Partner: UNT Libraries

Low-Energy Electron Irradiation of Preheated and Gas-Exposed Single-Wall Carbon Nanotubes

Description: We investigate the conditions under which electron irradiation of single-walled carbon nanotube (SWCNT) bundles with 2 keV electrons produces an increase in the Raman D peak. We find that an increase in the D peak does not occur when SWCNTs are preheated in situ at 600 C for 1 h in ultrahigh vacuum (UHV) before irradiation is performed. Exposing SWCNTs to air or other gases after preheating in UHV and before irradiation results in an increase in the D peak. Small diameter SWCNTs that are not preheated or preheated and exposed to air show a significant increase in the D and G bands after irradiation. X-ray photoelectron spectroscopy shows no chemical shifts in the C1s peak of SWCNTs that have been irradiated versus SWCNTs that have not been irradiated, suggesting that the increase in the D peak is not due to chemisorption of adsorbates on the nanotubes.
Date: December 2016
Creator: Ecton, Philip
Partner: UNT Libraries

A Determination of the Fine Structure Constant Using Precision Measurements of Helium Fine Structure

Description: Spectroscopic measurements of the helium atom are performed to high precision using an atomic beam apparatus and electro-optic laser techniques. These measurements, in addition to serving as a test of helium theory, also provide a new determination of the fine structure constant &#945;. An apparatus was designed and built to overcome limitations encountered in a previous experiment. Not only did this allow an improved level of precision but also enabled new consistency checks, including an extremely useful measurement in 3He. I discuss the details of the experimental setup along with the major changes and improvements. A new value for the J = 0 to 2 fine structure interval in the 23P state of 4He is measured to be 31 908 131.25(30) kHz. The 300 Hz precision of this result represents an improvement over previous results by more than a factor of three. Combined with the latest theoretical calculations, this yields a new determination of &#945; with better than 5 ppb uncertainty, &#945;-1 = 137.035 999 55(64).
Date: August 2010
Creator: Smiciklas, Marc
Partner: UNT Libraries

Quantum-Confined CdS Nanoparticles on DNA Templates

Description: As electronic devices became smaller, interest in quantum-confined semiconductor nanostructures increased. Self-assembled mesoscale semiconductor structures of II-VI nanocrystals are an especially exciting subject because of their controllable band gap and unique photophysical properties. Several preparative methods to synthesize and control the sizes of the individual nanocrystallites and the electronic and optical properties have been intensively studied. Fabrication of patterned nanostructures composed of quantum-confined nanoparticles is the next step toward practical applications. We have developed an innovative method to fabricate diverse nanostructures which relies on the size and a shape of a chosen deoxyribonucleic acid (DNA) template.
Date: May 1998
Creator: Rho, Young Gyu
Partner: UNT Libraries

Structural and Photoelectron Emission Properties of Chemical Vapor Deposition Grown Diamond Films

Description: The effects of methane (CH4), diborone (B2H6) and nitrogen (N2) concentrations on the structure and photoelectron emission properties of chemical vapor deposition (CVD) polycrystalline diamond films were studied. The diamond films were grown on single-crystal Si substrates using the hot-tungsten filament CVD technique. Raman spectroscopy and x-ray photoelectron spectroscopy (XPS) were used to characterize the different forms of carbon in the films, and the fraction of sp3 carbon to sp3 plus sp2 carbon at the surface of the films, respectively. Scanning electron microscopy (SEM) was used to characterize the surface morphology of the films. The photoelectron emission properties were determined by measuring the energy distributions of photoemitted electrons using ultraviolet photoelectron spectroscopy (UPS), and by measuring the photoelectric current as a function of incident photon energy.
Date: August 1998
Creator: Akwani, Ikerionwu Asiegbu
Partner: UNT Libraries

Scanning Tunneling Microscopy of Epitaxial Diamond (110) and (111) Films and Field Emission Properties of Diamond Coated Molybdenum Microtips

Description: The growth mechanism of chemical vapor deposition (CVD) grown homo-epitaxial diamond (110) and (111) films was studied using ultrahigh vacuum (UHV) scanning tunneling microscopy (STM). In addition, the field emission properties of diamond coated molybdenum microtips were studied as a function of exposure to different gases.
Date: May 1998
Creator: Lim, Seong-Chu
Partner: UNT Libraries

Investigation of Structure and Properties of Low Temperature Deposited Diamond-Like Carbon Films

Description: Electrodeposition is a novel method for fabrication of diamond-like carbon (DLC) films on metal substrates. In this work, DLC was electrochemically deposited on different substrates based on an anodic oxidation cyclization of acetylene in liquid ammonia. Successfully anodic deposition was carried out for DLC onto nickel substrate at temperatures below -40°C. Comparative studies were performed on a series of different carbon sources (acetylene, sodium acetylide, and a mixture of acetylene and sodium acetylide). The films were characterized using a variety of methods including Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), XPS valence band spectra, and/or scanning electron microscopy (SEM). Raman spectroscopy is used as a bench mark technique to verify the presence of deposited DLC films, to access the films homogeneities, and to provide the ratio of the different carbon phases, mainly disordered graphite (D) and graphite (G) phases in the films. A combination of the Raman with FTIR and valence band spectra analysis allowed the distinction between hydrogenated DLC and unhydrogenated DLC films. Three different kinds of DLC [(1) hydrogenated DLC (a-C:H); (2) tetrahedral hydrogenated DLC (ta-C:H); and (3) graphitic-like DLC] were deposited depending upon the deposition conditions and substrates. Temperature and current density are the most important parameters to govern the quality of the deposited films, where adding of acetylide into the electrolyte led to films with a higher degree of graphitic phases. The proposed mechanism for acetylene anodic oxidation does not involve direct electron transfer but electrochemical cyclization of acetylene radical cations and hydrogen abstraction at the termination steps. Sodium acetylide, however, dissociates to an acetylenic ion, C2H-, in liquid ammonia. The electrochemistry heterogeneity also leads to island and two-dimensional (2D) nucleation growth of DLC films. Different bond formations of metal to carbon and different chemisorptions of acetylene on metal play important roles ...
Date: August 2004
Creator: Pingsuthiwong, Charoendee
Partner: UNT Libraries

Novel Semi-Conductor Material Systems: Molecular Beam Epitaxial Growth and Characterization

Description: Semi-conductor industry relies heavily on silicon (Si). However, Si is not a direct-band gap semi-conductor. Consequently, Si does not possess great versatility for multi-functional applications in comparison with the direct band-gap III-V semi-conductors such as GaAs. To bridge this gap, what is ideally required is a semi-conductor material system that is based on silicon, but has significantly greater versatility. While sparsely studied, the semi-conducting silicides material systems offer great potential. Thus, I focused on the growth and structural characterization of ruthenium silicide and osmium silicide material systems. I also characterized iron silicon germanide films using extended x-ray absorption fine structure (EXAFS) to reveal phase, semi-conducting behavior, and to calculate nearest neighbor distances. The choice of these silicides material systems was due to their theoretically predicted and/or experimentally reported direct band gaps. However, the challenge was the existence of more than one stable phase/stoichiometric ratio of these materials. In order to possess the greatest control over the growth process, molecular beam epitaxy (MBE) has been employed. Structural and film quality comparisons of as-grown versus annealed films of ruthenium silicide are presented. Structural characterization and film quality of MBE grown ruthenium silicide and osmium silicide films via in situ and ex situ techniques have been done using reflection high energy electron diffraction, scanning tunneling microscopy, atomic force microscopy, cross-sectional scanning electron microscopy, x-ray photoelectron spectroscopy, and micro Raman spectroscopy. This is the first attempt, to the best of our knowledge, to grow osmium silicide thin films on Si(100) via the template method and compare it with the regular MBE growth method. The pros and cons of using the MBE template method for osmium silicide growth are discussed, as well as the structural differences of the as-grown versus annealed films. Future perspectives include further studies on other semi-conducting silicides material systems in terms ...
Date: December 2013
Creator: Elmarhoumi, Nader M.
Partner: UNT Libraries

Sulfur-induced Corrosion at Metal and Oxide Surfaces and Interfaces

Description: Sulfur adsorbed on metallic and oxide surfaces, whether originating from gaseous environments or segregating as an impurity to metallic interfaces, is linked to the deterioration of alloy performance. This research dealt with investigations on the interactions between sulfur and iron or iron alloy metallic and oxide surfaces under ultrahigh vacuum conditions. Sulfur was either intentionally dosed from a H2S source on an atomically clean metal surface, or segregated out as an impurity from the bulk to the metal surface by annealing at elevated temperatures.
Date: August 1997
Creator: Cabibil, Hyacinth (Hyacinth Liesl)
Partner: UNT Libraries

Nonlinear Dynamics of Semiconductor Device Circuits and Characterization of Deep Energy Levels in HgCdTe by Using Magneto-Optical Spectroscopy

Description: The nonlinear dynamics of three physical systems has been investigated. Diode resonator systems are experimentally shown to display a period doubling route to chaos, quasiperiodic states, periodic locking states, and Hopf bifurcation to chaos. Particularly, the transition from quasiperiodic states to chaos in line-coupled systems agrees well with the Curry-Yorke model. The SPICE program has been modified to give realistic models for the diode resonator systems.
Date: May 1994
Creator: Yü, Chi
Partner: UNT Libraries

A Study of the Processing Properties of Hard-Particle Reinforced Composite Solders

Description: The microstructural, mechanical and thermal properties of various composite solder formulations were investigated. Special interest was given in observing the processing properties, microstructural characteristics, fatigue behavior, tensile strength, and the effect of environmental ageing on the composite solder formulations. The solderability parameters wetting and speed of soldering, reflow temperature, and the thermal stability of the resulting composite solder were also examined.
Date: May 1994
Creator: Calderon, Jose Guadalupe
Partner: UNT Libraries