Search Results

Ballistic Deposition: Global Scaling and Local Time Series.

Description: Complexity can emerge from extremely simple rules. A paradigmatic example of this is the model of ballistic deposition (BD), a simple model of sedimentary rock growth. In two separate Problem-in-Lieu-of Thesis studies, BD was investigated numerically in (1+1)-D on a lattice. Both studies are combined in this document. For problem I, the global interface roughening (IR) process was studied in terms of effective scaling exponents for a generalized BD model. The model used incorporates a tunable parameter B to change the cooperation between aggregating particles. Scaling was found to depart increasingly from the predictions of Kardar-Parisi-Zhang theory both with decreasing system sizes and with increasing cooperation. For problem II, the local single column evolution during BD rock growth was studied via statistical analysis of time series. Connections were found between single column time series properties and the global IR process.
Date: December 2003
Creator: Schwettmann, Arne
Partner: UNT Libraries

Ion Beam Synthesis of Carbon Assisted Nanosystems in Silicon Based Substrates

Description: The systematic study of the formation of β-SiC formed by low energy carbon ion (C-)implantation into Si followed by high temperature annealing is presented. The research is performed to explore the optimal annealing conditions. The formation of crystalline β-SiC is clearly observed in the sample annealed at 1100 °C for a period of 1 hr. Quantitative analysis is performed in the formation of β-SiC by the process of implantation of different carbon ion fluences of 1×1017, 2×1017, 5×1017, and 8×1017 atoms /cm2 at an ion energy of 65 keV into Si. It is observed that the average size of β-SiC crystals decreased and the amount of β-SiC crystals increased with the increase in the implanted fluences when the samples were annealed at 1100°C for 1 hr. However, it is observed that the amount of β-SiC linearly increased with the implanted fluences up to 5×1017 atoms /cm2. Above this fluence the amount of β-SiC appears to saturate. The stability of graphitic C-C bonds at 1100°C limits the growth of SiC precipitates in the sample implanted at a fluence of 8×1017 atoms /cm2 which results in the saturation behavior of SiC formation in the present study. Secondly, the carbon cluster formation process in silica and the characterization of formed clusters is presented. Silicon dioxide layers ~500 nm thick are thermally grown on a Si (100) wafer. The SiO2 layers are then implanted with 70 keV carbon ions at a fluence of 5×1017 atoms/cm2. The implanted samples are annealed 1100 °C for different time periods of 10 min., 30 min., 60 min., 90 min., and 120 min., in the mixture of argon and hydrogen gas (96 % Ar + 4% hydrogen). Photoluminescence spectroscopy reveals UV to visible emission from the samples. A detail mechanism of the photoluminescence and its possible origin is discussed ...
Date: May 2011
Creator: Poudel, Prakash Raj
Partner: UNT Libraries

Thorium and Uranium M-shell X-ray Production Cross Sections for 0.4 – 4.0 MeV Protons, 0.4 - 6.0 MeV Helium Ions, 4.5 – 11.3 MeV Carbon Ions, and 4.5 – 13.5 MeV Oxygen Ions.

Description: The M-shell x-ray production cross section for thorium and uranium have been determined for protons of energy 0.4 - 4.0 MeV, helium ions of energy 0.4 - 6.0 MeV, carbon ions of energy 4.5 - 11.3 MeV and oxygen ions of energy 4.5 - 13.5 MeV. The total cross sections and the cross sections for individual x-ray peaks in the spectrum, consisting of the following transitions Mz (M4-N2, M5-N3, M4-N3), Ma (M5-N6,7), Mb (M4-N6, M5-O3, M4- O2), and Mg (M4-O3, M5-P3, M3-N4, M3-N5), were compared to the theoretical values determined from the PWBA + OBKN and ECUSAR. The theoretical values for the carbon and oxygen ions were also modified to take into account the effects of multiple ionizations of the target atom by the heavier ions. It is shown that the results of the ECUSAR theory tend to provide better agreement with the experimental data.
Date: May 2011
Creator: Phinney, Lucas C.
Partner: UNT Libraries

A Novel Process for GeSi Thin Film Synthesis

Description: A unique process of fabricating a strained layer GexSi1-x on insulator is demonstrated. Such strained heterostructures are useful in the fabrication of high-mobility transistors. This technique incorporates well-established silicon processing technology e.g., ion implantation and thermal oxidation. A dilute GeSi layer is initially formed by implanting Ge+ into a silicon-on-insulator (SOI) substrate. Thermal oxidation segregates the Ge at the growing oxide interface to form a distinct GexSi1-x thin-film with a composition that can be tailored by controlling the oxidation parameters (e.g. temperature and oxidation ambient). In addition, the film thickness can be controlled by implantation fluence, which is important since the film forms pseudomorphically below 2×1016 Ge/cm2. Continued oxidation consumes the underlying Si leaving the strained GeSi film encapsulated by the two oxide layers, i.e. the top thermal oxide and the buried oxide. Removal of the thermal oxide by a dilute HF etch completes the process. Strain relaxation can be achieved by either of two methods. One involves vacancy injection by ion implantation to introduce sufficient open-volume within the film to compensate for the compressive strain. The other depends upon the formation of GeO2. If Ge is oxidized in the absence of Si, it evaporates as GeO(g) resulting in spontaneous relaxation within the strained film. Conditions under which this occurs have been discussed along with elaborated results of oxidation kinetics of Ge-ion implanted silicon. Rutherford backscattering spectrometry (RBS), ion channeling, Raman spectroscopy and scanning electron microscopy (SEM) were used as the characterization techniques.
Date: December 2007
Creator: Hossain, Khalid
Partner: UNT Libraries

Ion-Induced Damage In Si: A Fundamental Study of Basic Mechanisms over a Wide Range of Implantation Conditions

Description: A new understanding of the damage formation mechanisms in Si is developed and investigated over an extended range of ion energy, dose, and irradiation temperature. A simple model for dealing with ion-induced damage is proposed, which is shown to be applicable over the range of implantation conditions. In particular the concept of defect "excesses" will be discussed. An excess exists in the lattice when there is a local surplus of one particular type of defect, such as an interstitial, over its complimentary defect (i.e., a vacancy). Mechanisms for producing such excesses by implantation will be discussed. The basis of this model specifies that accumulation of stable lattice damage during implantation depends upon the excess defects and not the total number of defects. The excess defect model is validated by fundamental damage studies involving ion implantation over a range of conditions. Confirmation of the model is provided by comparing damage profiles after implantation with computer simulation results. It will be shown that transport of ions in matter (TRIM) can be used effectively to model the ion-induced damage profile, i.e. excess defect distributions, by a simple subtraction process in which the spatially correlated defects are removed, thereby simulating recombination. Classic defect studies illuminate defect interactions from concomitant implantation of high- and medium-energy Si+-self ions. Also, the predictive quality of the excess defect model was tested by applying the model to develop several experiments to engineer excess defect concentrations to substantially change the nature and distribution of the defects. Not only are the excess defects shown to play a dominant role in defect-related processing issues, but their manipulation is demonstrated to be a powerful tool in tailoring the implantation process to achieve design goals. Pre-amorphization and dual implantation of different energetic ions are two primary investigative tools used in this work. Various analyses, ...
Date: May 2006
Creator: Roth, Elaine Grannan
Partner: UNT Libraries

Investigation of Selected Optically-Active Nanosystems Fashioned using Ion Implantation

Description: Opto-electronic semiconductor technology continues to grow at an accelerated pace, as the industry seeks to perfect devices such as light emitting diodes for purposes of optical processing and communication. A strive for greater efficiency with shrinking device dimensions, continually pushes the technology from both a design and materials aspect. Nanosystems such a quantum dots, also face new material engineering challenges as they enter the realm of quantum mechanics, with each system and material having markedly different electronic properties. Traditionally, the semiconductor industry has focused on materials such Group II-VI and III-V compounds as the basis material for future opto-electronic needs. Unfortunately, these material systems can be expensive and have difficulties integrating into current Si-based technology. The industry is reluctant to leave silicon due in part to silicon's high quality oxide, and the enormous amount of research invested into silicon based circuit fabrication. Although recently materials such as GaN are starting to dominate the electro-optical industry since a Si-based substitute has not been found. The purpose of the dissertation was to examine several promising systems that could be easily integrated into current Si-based technology and also be produced using simple inexpensive fabrication techniques such ion implantation. The development of optically active nano-sized precipitates in silica to form the active layer of an opto-electronic device was achieved with ion implantation and thermal annealing. Three material systems were investigated. These systems consisted of carbon, silicon and metal silicide based nanocrystals. The physical morphology and electronic properties were monitored using a variety of material characterization techniques. Rutherford backscattering/channeling were used to monitor elemental concentrations, photoluminescence was used to monitor the opto-electronic properties and transmission electron microscopy was used to study the intricate morphology of individual precipitates. The electronic properties and the morphology were studied as a function of implant dose, anneal times and anneal ...
Date: May 2006
Creator: Mitchell, Lee
Partner: UNT Libraries

Monte Carlo simulation and experimental studies of the production of neutron-rich medical isotopes using a particle accelerator.

Description: The developments of nuclear medicine lead to an increasing demand for the production of radioisotopes with suitable nuclear and chemical properties. Furthermore, from the literature it is evident that the production of radioisotopes using charged-particle accelerators instead of nuclear reactors is gaining increasing popularity. The main advantages of producing medical isotopes with accelerators are carrier free radionuclides of short lived isotopes, improved handling, reduction of the radioactive waste, and lower cost of isotope fabrication. Proton-rich isotopes are the result of nuclear interactions between enriched stable isotopes and energetic protons. An interesting observation is that during the production of proton-rich isotopes, fast and intermediately fast neutrons from nuclear reactions such as (p,xn) are also produced as a by-product in the nuclear reactions. This observation suggests that it is perhaps possible to use these neutrons to activate secondary targets for the production of neutron-rich isotopes. The study of secondary radioisotope production with fast neutrons from (p,xn) reactions using a particle accelerator is the main goal of the research in this thesis.
Access: This item is restricted to UNT Community Members. Login required if off-campus.
Date: May 2002
Creator: Rosencranz, Daniela Necsoiu
Partner: UNT Libraries

Studying Interactions of Gas Molecules with Nanomaterials Loaded in a Microwave Resonant Cavity

Description: A resonant cavity operating in TE011 mode was used to study the adsorption response of single walled carbon nanotubes (SWCNTs) and other nanomaterials for different types of gas molecules. The range of the frequency signal as a probe was chosen as geometry dependent range between 9.1 -9.8 GHz. A highly specific range can be studied for further experiments dependent on the type of molecule being investigated. It was found that for different pressures of gases and for different types of nanomaterials, there was a different response in the shifts of the probe signal for each cycle of gassing and degassing of the cavity. This dissertation suggests that microwave spectroscopy of a complex medium of gases and carbon nanotubes can be used as a highly sensitive technique to determine the complex dielectric response of different polar as well as non-polar gases when subjected to intense electromagnetic fields within the cavity. Also, as part of the experimental work, a range of other micro-porous materials was tested using the residual gas analysis (RGA) technique to determine their intrinsic absorption/adsorption characteristics when under an ultra-high vacuum environment. The scientific results obtained from this investigation, led to the development of a chemical biological sensor prototype. The method proposed is to develop operational sensors to detect toxin gases for homeland security applications and also develop sniffers to detect toxin drugs for law enforcement agency personnel.
Date: August 2007
Creator: Anand, Aman
Partner: UNT Libraries

A New Approach for Transition Metal Free Magnetic Sic: Defect Induced Magnetism After Self-ion Implantation

Description: SiC has become an attractive wide bandgap semiconductor due to its unique physical and electronic properties and is widely used in high temperature, high frequency, high power and radiation resistant applications. SiC has been used as an alternative to Si in harsh environments such as in the oil industry, nuclear power systems, aeronautical, and space applications. SiC is also known for its polytypism and among them 3C-SiC, 4H-SiC and 6H-SiC are the most common polytypes used for research purposes. Among these polytypes 4H-SiC is gaining importance due to its easy commercial availability with a large bandgap of 3.26 eV at room temperature. Controlled creation of defects in materials is an approach to modify the electronic properties in a way that new functionality may result. SiC is a promising candidate for defect-induced magnetism on which spintronic devices could be developed. The defects considered are of room temperature stable vacancy types, eliminating the need for magnetic impurities, which easily diffuse at room temperature. Impurity free vacancy type defects can be created by implanting the host atoms of silicon or carbon. The implantation fluence determines the defect density, which is a critical parameter for defect induced magnetism. Therefore, we have studied the influence of low fluence low energy silicon and carbon implantation on the creation of defects in n-type 4H-SiC. The characterization of the defects in these implanted samples was performed using the techniques, RBS-channeling and Raman spectroscopy. We have also utilized these characterization techniques to analyze defects created in much deeper layers of the SiC due to implantation of high energy nitrogen ions. The experimentally determined depths of the Si damage peaks due to low energy (60 keV) Si and C ions with low fluences (< 1015 cm-2) are consistent with the SRIM-2011 simulations. From RBS-C Si sub-lattice measurements for different fluences ...
Date: May 2013
Creator: Kummari, Venkata Chandra Sekhar
Partner: UNT Libraries

Broad-band Light Emission From Ion Implanted Silicon Nanocrystals Via Plasmonic and Non-plasmonic Effects for Optoelectronics

Description: Broad band light emission ranging from the ultraviolet (UV) to the near infrared (NIR) has been observed from silicon nanoparticles fabricated using low energy (30-45 keV) metal and non-metal ion implantation with a fluence of 5*1015 ions/cm2 in crystalline Si(100). It is found from a systematic study of the annealing carried out at certain temperatures that the spectral characteristics remains unchanged except for the enhancement of light emission intensity due to annealing. The annealing results in nucleation of metal nanoclusters in the vicinity of Si nanoparticles which enhances the emission intensity. Structural and optical characterization demonstrate that the emission originates from both highly localized defect bound excitons at the Si/Sio2 interface, as well as surface and interface traps associated with the increased surface area of the Si nanocrystals. The emission in the UV is due to interband transitions from localized excitonic states at the interface of Si/SiO2 or from the surface of Si nanocrystals. The radiative efficiency of the UV emission from the Si nanoparticles can be modified by the localized surface plasmon (LSP) interaction induced by the nucleation of silver nanoparticles with controlled annealing of the samples. The UV emission from Si nanoclusters are coupled resonantly to the LSP modes. The non-resonant emission can be enhanced by electrostatic-image charge effects. The emission in the UV (~3.3 eV) region can also be significantly enhanced by electrostatic image charge effects induced by Au nanoparticles. The UV emission from Si nanoclusters, in this case, can be coupled without LSP resonance. The recombination of carriers in Si bound excitons is mediated by transverse optical phonons due to the polarization of the surface bound exciton complex. The low energy side of emission spectrum at low temperature is dominated by 1st and 2nd order phonon replicas. Broad band emission ranging from the UV to the ...
Date: December 2012
Creator: Singh, Akhilesh K.
Partner: UNT Libraries

Synthesis and Characterization of Ion Beam Assisted Silver Nanosystems in Silicon Based Materials for Enhanced Photocurrent Collection Efficiency

Description: In recent years a great deal of interest has been focused on the synthesis of transitional metal (e.g. Ag, Cu, Fe, Au) nanosystems at the surface to sub-surface regions of Si and SiO2 matrices for fundamental understanding of their structures as well as for development of technological applications with enhanced electronic and optical properties. The applications of the metal nanoparticle or nanocluster (NC) systems range from plasmonics, photovoltaic devices, medical, and biosensors. In all of these applications; the size, shape and distribution of the metallic NCs in the silicon matrix play a key role. Low energy ion implantation followed by thermal annealing (in vacuum or gas environment) is one of the most suitable methods for synthesis of NCs at near surfaces to buried layers below the surfaces of the substrates. This technique can provide control over depth and concentration of the implanted ions in the host matrix. The implanted low energy metal ions initially amorphizes the Si substrates while being distributed at a shallow depth near the substrate surface. When subject to thermal annealing, the implanted ions agglomerate to form clusters of different sizes at different depths depending upon the fluence. However, for the heavier ions implanted with high fluences (~1×1016 - 1×1017 atoms/cm2), there lies challenges for accurately predicting the distribution of the implanted ions due to sputtering of the surface as well as redistribution of the implants within the host matrix. In this dissertation, we report the investigation of the saturation of the concentration of the implanted ion species in the depth profiles with low energies (< 80 keV) metal ions (Ag and Au) in Si (100), while studying the dynamic changes during the ion implantation. Multiple low energies (30-80 keV) Ag ions with different fluences were sequentially implanted into commercially available Si wafers in order to facilitate ...
Date: May 2015
Creator: Dhoubhadel, Mangal S.
Partner: UNT Libraries

Charge Collection Studies on Integrated Circuit Test Structures using Heavy-Ion Microbeams and MEDICI Simulation Calculations

Description: Ion induced charge collection dynamics within Integrated Circuits (ICs) is important due to the presence of ionizing radiation in the IC environment. As the charge signals defining data states are reduced by voltage and area scaling, the semiconductor device will naturally have a higher susceptibility to ionizing radiation induced effects. The ionizing radiation can lead to the undesired generation and migration of charge within an IC. This can alter, for example, the memory state of a bit, and thereby produce what is called a "soft" error, or Single Event Upset (SEU). Therefore, the response of ICs to natural radiation is of great concern for the reliability of future devices. Immunity to soft errors is listed as a requirement in the 1997 National Technology Roadmap for Semiconductors prepared by the Semiconductor Industry Association in the United States. To design more robust devices, it is essential to create and test accurate models of induced charge collection and transport in semiconductor devices. A heavy ion microbeam produced by an accelerator is an ideal tool to study charge collection processes in ICs and to locate the weak nodes and structures for improvement through hardening design. In this dissertation, the Ion Beam Induced Charge Collection (IBICC) technique is utilized to simulate recoil effects of ions in ICs. These silicon or light ion recoils are usually produced by the elastic scattering or inelastic reactions between cosmic neutrons or protons and the lattice atoms in ICs. Specially designed test structures were experimentally studied, using microbeams produced at Sandia National Laboratories. A new technique, Diffusion Time Resolved IBICC, is first proposed in this work to measure the average arrival time of the diffused charge, which can be related to the first moment (or the average time) of the arrival carrier density at the junction. A 2D device simulation ...
Date: May 2000
Creator: Guo, Baonian
Partner: UNT Libraries

Energy Distribution of Sputtered Neutral Atoms from a Multilayer Target

Description: Energy distribution measurements of sputtered neutral particles contribute to the general knowledge of sputtering, a common technique for surface analysis. In this work emphasis was placed on the measurement of energy distribution of sputtered neutral atoms from different depths. The liquid Ga-In eutectic alloy as a sample target for this study was ideal due to an extreme concentration ratio gradient between the top two monolayers. In pursuing this study, the method of sputter-initiated resonance ionization spectroscopy (SIRIS) was utilized. SIRIS employs a pulsed ion beam to initiate sputtering and tunable dye lasers for resonance ionization. Observation of the energy distribution was achieved with a position-sensitive detector. The principle behind the detector's energy resolution is time of flight (TOF) spectroscopy. For this specific detector, programmed time intervals between the sputtering pulse at the target and the ionizing laser pulse provided information leading to the energy distribution of the secondary neutral particles. This experiment contributes data for energy distributions of sputtered neutral particles to the experimental database, required by theoretical models and computer simulations for the sputtering phenomenon.
Date: August 2000
Creator: Bigelow, Alan W.
Partner: UNT Libraries

The Stopping of Energetic Si, P and S Ions in Ni, Cu, Ge and GaAs Targets

Description: Accurate knowledge of stopping powers is essential for these for quantitative analysis and surface characterization of thin films using ion beam analysis (IBA). These values are also of interest in radiobiology and radiotherapy, and in ion- implantation technology where shrinking feature sizes puts high demands on the accuracy of range calculations. A theory that predicts stopping powers and ranges for all projectile-target combinations is needed. The most important database used to report the stopping powers is the SRIM/TRIM program developed by Ziegler and coworkers. However, other researchers report that at times, these values differ significantly from experimental values. In this study the stopping powers of Si, P and S ions have been measured in Ni, Cu, Ge and GaAs absorbers in the energy range ~ 2-10 MeV. For elemental films of Ni, Cu and Ge, the stopping of heavy ions was measured using a novel ERD (Elastic Recoil Detection) based technique. In which an elastically recoiled lighter atom is used to indirectly measure the energy of the incoming heavy ion using a surface barrier detector. In this way it was possible to reduce the damage and to improve the FWHM of the detector. The results were compared to SRIM-2000 predictions and other experimental measurements. A new technique derived from Molecular Beam Epitaxy (MBE) was developed to prepare stoichiometric GaAs films on thin carbon films for use in transmission ion beam experiments. The GaAs films were characterized using X-ray Photoelectron Spectroscopy (XPS) and Particle Induced X-ray Emission (PIXE). These films were used to investigate the stopping powers of energetic heavy ions in GaAs and to provide data for the calculation of Bethe-Bloch parameters in the framework of the Modified Bethe-Bloch theory. As a result of this study, stopping power data are available for the first time for Si and P ions ...
Access: This item is restricted to UNT Community Members. Login required if off-campus.
Date: December 2001
Creator: Nigam, Mohit
Partner: UNT Libraries

Ion Beam Synthesis of Binary and Ternary Transition Metal Silicide Thin Films

Description: Among the well-known methods to form or modify the composition and physical properties of thin films, ion implantation has shown to be a very powerful technique. In particular, ion beam syntheses of binary iron silicide have been studied by several groups. Further, the interests in transition metal silicide systems are triggered by their potential use in advanced silicon based opto-electronic devices. In addition, ternary silicides have been by far less studied than their binary counterparts despite the fact that they have interesting magnetic and electronic properties. In this study, we investigate ion beam synthesis of Fe-Si binary structures and Fe-Co-Si ternary structures. This work involves fundamental investigation into development of a scalable synthesis process involving binary and ternary transitional metal silicide thin films and Nano-structures using low energy ion beams. Binary structures were synthesized by implanting Fe- at 50 keV energy. Since ion implantation is a dynamic process, Dynamic simulation techniques were used in these studies to determine saturation fluences for ion implantation. Also, static and dynamic simulation results were compared with experimental results. The outcome of simulations and experimental results indicate, dynamic simulation codes are more suitable than static version of the TRIM to simulate high fluence, low energy and, heavy ion implantation processes. Furthermore, binary Fe-Si phase distribution was determined at different implantation fluences and annealing temperatures. A higher fluence implantation at 2.16×1017 atoms/cm2 and annealing at 500 oC showed three different Fe-Si phase formations (β-FeSi2, FeSi and Fe3Si) in substrate. Further, annealing the samples at 800 oC for 60 minutes converted the Fe3Si phase into FeSi2 and FeSi phases. As an extension, a second set of Fe- ion implantations was carried with the same parameters while the substrate was placed under an external magnetic field. External magnetic fields stimulate the formation of magnetic phase centers in the ...
Date: December 2016
Creator: Lakshantha, Wickramaarachchige Jayampath
Partner: UNT Libraries