6 Matching Results

Search Results

Results: 1 - 6
open access

The Effects of Cesium Deposition and Gas Exposure on the Field Emission Properties of Single Wall and Multiwall Carbon Nanotubes

Description: The effects of Cs deposition on the field emission (FE) properties of single-walled carbon nanotube (SWNT) bundles were studied. In addition, a comparative study was made on the effects of O2, Ar and H2 gases on the field emission properties of SWNT bundles and multiwall carbon nanotubes (MWNTs). We observed that Cs deposition decreases the turn-on field for FE by a factor of 2.1 - 2.9 and increases the FE current by 6 orders of magnitude. After Cs deposition, the FE current versus voltage (… more
Date: May 2002
Creator: Wadhawan, Atul
Item Type: Refine your search to only Thesis or Dissertation
Partner: UNT Libraries
open access

Magnetotransport Properties of AlxIn1-xAsySb1-y/GaSb and Optical Properties of GaAs1-xSbx

Description: Multilayer structures of AlxIn1-xAsySb1-y/GaSb (0.37 £ x £ 0.43, 0.50 £ y £ 0.52), grown by molecular beam epitaxy on GaSb (100) substrates were characterized using variable temperature Hall and Shubnikov-de Haas techniques. For nominally undoped structures both p and n-type conductivity was observed. The mobilities obtained were lower than those predicted by an interpolation method using the binary alloys; therefore, a detailed analysis of mobility versus temperature data was performed to … more
Date: May 2003
Creator: Lukic- Zrnic, Reiko
Item Type: Refine your search to only Thesis or Dissertation
Partner: UNT Libraries
open access

Neutron Transmutation and Hydrogenation Study of Hg₁₋xCdxTe

Description: Anomalous Hall behavior of HgCdTe refers to a "double cross-over" feature of the Hall coefficient in p-type material, or a peak in the Hall mobility or Hall coefficient in n-type material. A magnetoconductivity tensor approach was utilized to identify presence of two electrons contributing to the conduction as well as transport properties of each electron in the material. The two electron model for the mobility shows that the anomalous Hall behavior results from the competition of two electron… more
Date: December 2007
Creator: Zhao, Wei
Item Type: Refine your search to only Thesis or Dissertation
Partner: UNT Libraries
open access

Novel Semi-Conductor Material Systems: Molecular Beam Epitaxial Growth and Characterization

Description: Semi-conductor industry relies heavily on silicon (Si). However, Si is not a direct-band gap semi-conductor. Consequently, Si does not possess great versatility for multi-functional applications in comparison with the direct band-gap III-V semi-conductors such as GaAs. To bridge this gap, what is ideally required is a semi-conductor material system that is based on silicon, but has significantly greater versatility. While sparsely studied, the semi-conducting silicides material systems offer gr… more
Date: December 2013
Creator: Elmarhoumi, Nader M.
Item Type: Refine your search to only Thesis or Dissertation
Partner: UNT Libraries
open access

Metal Oxide Reactions in Complex Environments: High Electric Fields and Pressures above Ultrahigh Vacuum

Description: Metal oxide reactions at metal oxide surfaces or at metal-metal oxide interfaces are of exceptional significance in areas such as catalysis, micro- and nanoelectronics, chemical sensors, and catalysis. Such reactions are frequently complicated by the presence of high electric fields and/or H2O-containing environments. The focus of this research was to understand (1) the iron oxide growth mechanism on Fe(111) at 300 K and 500 K together with the effect of high electric fields on these iron oxide… more
Date: August 2005
Creator: Qin, Feili
Item Type: Refine your search to only Thesis or Dissertation
Partner: UNT Libraries
open access

A Novel Process for GeSi Thin Film Synthesis

Description: A unique process of fabricating a strained layer GexSi1-x on insulator is demonstrated. Such strained heterostructures are useful in the fabrication of high-mobility transistors. This technique incorporates well-established silicon processing technology e.g., ion implantation and thermal oxidation. A dilute GeSi layer is initially formed by implanting Ge+ into a silicon-on-insulator (SOI) substrate. Thermal oxidation segregates the Ge at the growing oxide interface to form a distinct GexSi1-x … more
Date: December 2007
Creator: Hossain, Khalid
Item Type: Refine your search to only Thesis or Dissertation
Partner: UNT Libraries
Back to Top of Screen