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Magnetotransport Properties of AlxIn1-xAsySb1-y/GaSb and Optical Properties of GaAs1-xSbx

Description: Multilayer structures of AlxIn1-xAsySb1-y/GaSb (0.37 £ x £ 0.43, 0.50 £ y £ 0.52), grown by molecular beam epitaxy on GaSb (100) substrates were characterized using variable temperature Hall and Shubnikov-de Haas techniques. For nominally undoped structures both p and n-type conductivity was observed. The mobilities obtained were lower than those predicted by an interpolation method using the binary alloys; therefore, a detailed analysis of mobility versus temperature data was performed to extract the appropriate scattering mechanisms. For p-type samples, the dominant mechanism was ionized impurity scattering at low temperatures and polar optical phonon scattering at higher temperatures. For n-type samples, ionized impurity scattering was predominant at low temperatures, and electron-hole scattering dominated for both the intermediate and high temperature range. Analyses of the Shubnikov-de Haas data indicate the presence of 2-D carrier confinement consistent with energy subbands in GaAszSb1-z potential wells. Epilayers of GaAs1-xSbx (0.19<x<0.71), grown by MBE on semi-insulating GaAs with various substrate orientations, were studied by absorption measurements over the temperature range of 4-300 K. The various substrate orientations were chosen to induce different degrees of spontaneous atomic ordering. The temperature dependence of the energy gap (Eg) for each of these samples was modeled using three semi-empirical relationships. The resulting coefficients for each model describe not only the temperature dependence of Eg for each of the alloy compositions investigated, but also for all published results for this alloy system. The effect of ordering in these samples was manifested by a deviation of the value of Eg from the value of the random alloy. The presence of CuPt-B type atomic ordering was verified by transmission electron diffraction measurements, and the order parameter was estimated for all the samples investigated and found to be larger for the samples grown on the (111) A offcut orientations. This result strongly suggests ...
Date: May 2003
Creator: Lukic- Zrnic, Reiko
Partner: UNT Libraries

Transport Processes in Synchrotrons

Description: This thesis examines the evolution of beams in synchrotrons. Following an introduction to accelerator physics in Chapter 1, in Chapter 2 I describe the Fermilab E778 'diffusion' experiment. Families of sextupoles were powered to drive the 2/5 resonance, and a beam was then kicked to populate a nonlinear region of the transverse phase space. The beam was then observed over periods of approximately 30 minutes for a variety of kick amplitudes and physical apertures. In Chapter 3 comments about the analytic treatment of such systems are discussed, including the assumptions inherent in the conventional treatment. I motivate my use of a simplified model in Chapter 4 after examining common computational methods. Deriving the model from the formalism of traditional accelerator physics, I discuss its implementation on a massively parallel computer, the Intel iPSC/860 hypercube, and examine the performance of this algorithm in detail. Using the simple model to perform the numerical experiment equivalent to E778 is the subject of Chapter 5. I derive the parameters needed for the simple model based upon the physical experiment. Both three dimensional cases and cases with reduced dimensionality are run. From power supply ripple data and an electrical model of the magnet string, I compute tune modulation depths, and a subset of these are run. I conclude that tune modulation from power supply ripple is not a significant source of transport for this system. In Chapter 6, the intensities of the beams are used to compare the experimental and numerical runs, using both exponential and algebraic decays, and the algebraic form is seen to provide a better fit. The agreement between numerical and experimental results is best for fully three-dimensional runs, but the numerical results show slower decay than the experimental. Individual particles are examined, whose motion consists of stochastic motion interspersed with regular ...
Date: May 1994
Creator: Cole, Benjamin H. (Benjamin Holland)
Partner: UNT Libraries

Photon Exchange Between a Pair of Nonidentical Atoms with Two Forms of Interactions

Description: A pair of nonidentical two-level atoms, separated by a fixed distance R, interact through photon exchange. The system is described by a state vector which is assumed to be a superposition of four "essential states": (1) the first atom is excited, the second one is in the ground state, and no photon is present, (2) the first atom is in its ground state, the second one is excited, and no photon is present, (3) both atoms are in their ground states and a photon is present, and (4) both atoms are excited and a photon is also present. The system is initially in state (1). The probabilities of each atom being excited are calculated for both the minimally-coupled interaction and the multipolar interaction in the electric dipole approximation. For the minimally-coupled interaction Hamiltonian, the second atom has a probability of being instantaneously excited, so the interaction is not retarded. For the multipolar interaction Hamiltonian, the second atom is not excited before the retardation time, which agrees with special relativity. For the minimally-coupled interaction the nonphysical result occurs because the unperturbed Hamiltonian is not the energy operator in the Coulomb gauge. For the multipolar Hamiltonian in the electric dipole approximation the unperturbed Hamiltonian is the energy operator. An active view of unitary transformations in nonrelativistic quantum electrodynamics is used to derive transformation laws for the potentials of the electromagnetic field and the static Coulomb potential. For a specific choice of unitary transformation the transformation laws for the potentials are used in the minimally-coupled second-quantized Hamiltonian to obtain the multipolar Hamiltonian, which is expressed in terms of the quantized electric and magnetic fields.
Date: May 1987
Creator: Golshan, Shahram Mohammad-Mehdi
Partner: UNT Libraries

Charge Collection Studies on Integrated Circuit Test Structures using Heavy-Ion Microbeams and MEDICI Simulation Calculations

Description: Ion induced charge collection dynamics within Integrated Circuits (ICs) is important due to the presence of ionizing radiation in the IC environment. As the charge signals defining data states are reduced by voltage and area scaling, the semiconductor device will naturally have a higher susceptibility to ionizing radiation induced effects. The ionizing radiation can lead to the undesired generation and migration of charge within an IC. This can alter, for example, the memory state of a bit, and thereby produce what is called a "soft" error, or Single Event Upset (SEU). Therefore, the response of ICs to natural radiation is of great concern for the reliability of future devices. Immunity to soft errors is listed as a requirement in the 1997 National Technology Roadmap for Semiconductors prepared by the Semiconductor Industry Association in the United States. To design more robust devices, it is essential to create and test accurate models of induced charge collection and transport in semiconductor devices. A heavy ion microbeam produced by an accelerator is an ideal tool to study charge collection processes in ICs and to locate the weak nodes and structures for improvement through hardening design. In this dissertation, the Ion Beam Induced Charge Collection (IBICC) technique is utilized to simulate recoil effects of ions in ICs. These silicon or light ion recoils are usually produced by the elastic scattering or inelastic reactions between cosmic neutrons or protons and the lattice atoms in ICs. Specially designed test structures were experimentally studied, using microbeams produced at Sandia National Laboratories. A new technique, Diffusion Time Resolved IBICC, is first proposed in this work to measure the average arrival time of the diffused charge, which can be related to the first moment (or the average time) of the arrival carrier density at the junction. A 2D device simulation ...
Date: May 2000
Creator: Guo, Baonian
Partner: UNT Libraries

Energy Distribution of Sputtered Neutral Atoms from a Multilayer Target

Description: Energy distribution measurements of sputtered neutral particles contribute to the general knowledge of sputtering, a common technique for surface analysis. In this work emphasis was placed on the measurement of energy distribution of sputtered neutral atoms from different depths. The liquid Ga-In eutectic alloy as a sample target for this study was ideal due to an extreme concentration ratio gradient between the top two monolayers. In pursuing this study, the method of sputter-initiated resonance ionization spectroscopy (SIRIS) was utilized. SIRIS employs a pulsed ion beam to initiate sputtering and tunable dye lasers for resonance ionization. Observation of the energy distribution was achieved with a position-sensitive detector. The principle behind the detector's energy resolution is time of flight (TOF) spectroscopy. For this specific detector, programmed time intervals between the sputtering pulse at the target and the ionizing laser pulse provided information leading to the energy distribution of the secondary neutral particles. This experiment contributes data for energy distributions of sputtered neutral particles to the experimental database, required by theoretical models and computer simulations for the sputtering phenomenon.
Date: August 2000
Creator: Bigelow, Alan W.
Partner: UNT Libraries

Optical Nonlinearities in Semiconductors for Limiting

Description: I have conducted detailed experimental and theoretical studies of the nonlinear optical properties of semiconductor materials useful for optical limiting. I have constructed optical limiters utilizing two-photon absorption along with photogenerated carrier defocusing as well as the bound electronic nonlinearity using the semiconducting material ZnSe. I have optimized the focusing geometry to achieve a large dynamic range while maintaining a low limiting energy for the device. The ZnSe monolithic optical limiter has achieved a limiting energy as low as 13 nJ (corresponding to 300W peak power) and a dynamic range as large as 105 at 532 nm using psec pulses. Theoretical analysis showed that the ZnSe device has a broad-band response covering the wavelength range from 550 nm to 800 nm. Moreover, I found that existing theoretical models (e.g. the Auston model and the band-resonant model using Boltzmann statistics) adequately describe the photo-generated carriers refractive nonlinearity in ZnSe. Material nonlinear optical parameters, such as the two-photon absorption coefficient β_2=5.5cm/GW, the refraction per unit carrier density σ_n=-0.8∗10^-21cm^3 and the bound electronic refraction n_2=-4∗10^-11esu, have been measured via time-integrated beam distortion experiments in the near field. A numerical code has been written to simulate the beam distortion in order to extract the previously mentioned material parameters. In addition, I have performed time-resolved distortion measurements that provide an intuitive picture of the carrier generation process via two-photon absorption. I also characterized the optical nonlinearities in a ZnSe Fabry-Perot thin film structure (an interference filter). I concluded that the nonlinear absorption alone in the thin film is insufficient to build an effective optical limiter, as it did not show a net change in refraction using psec pulses. An innovative numerical program was developed to simulate the nonlinear beam propagation inside the Fabry-Perot structure. For comparison, pump-probe experiments were performed using both thin film and ...
Date: May 1990
Creator: Wu, Yuan-Yen
Partner: UNT Libraries

The Stopping of Energetic Si, P and S Ions in Ni, Cu, Ge and GaAs Targets

Description: Accurate knowledge of stopping powers is essential for these for quantitative analysis and surface characterization of thin films using ion beam analysis (IBA). These values are also of interest in radiobiology and radiotherapy, and in ion- implantation technology where shrinking feature sizes puts high demands on the accuracy of range calculations. A theory that predicts stopping powers and ranges for all projectile-target combinations is needed. The most important database used to report the stopping powers is the SRIM/TRIM program developed by Ziegler and coworkers. However, other researchers report that at times, these values differ significantly from experimental values. In this study the stopping powers of Si, P and S ions have been measured in Ni, Cu, Ge and GaAs absorbers in the energy range ~ 2-10 MeV. For elemental films of Ni, Cu and Ge, the stopping of heavy ions was measured using a novel ERD (Elastic Recoil Detection) based technique. In which an elastically recoiled lighter atom is used to indirectly measure the energy of the incoming heavy ion using a surface barrier detector. In this way it was possible to reduce the damage and to improve the FWHM of the detector. The results were compared to SRIM-2000 predictions and other experimental measurements. A new technique derived from Molecular Beam Epitaxy (MBE) was developed to prepare stoichiometric GaAs films on thin carbon films for use in transmission ion beam experiments. The GaAs films were characterized using X-ray Photoelectron Spectroscopy (XPS) and Particle Induced X-ray Emission (PIXE). These films were used to investigate the stopping powers of energetic heavy ions in GaAs and to provide data for the calculation of Bethe-Bloch parameters in the framework of the Modified Bethe-Bloch theory. As a result of this study, stopping power data are available for the first time for Si and P ions ...
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Date: December 2001
Creator: Nigam, Mohit
Partner: UNT Libraries

Ion Beam Synthesis of Carbon Assisted Nanosystems in Silicon Based Substrates

Description: The systematic study of the formation of &#946;-SiC formed by low energy carbon ion (C-)implantation into Si followed by high temperature annealing is presented. The research is performed to explore the optimal annealing conditions. The formation of crystalline &#946;-SiC is clearly observed in the sample annealed at 1100 °C for a period of 1 hr. Quantitative analysis is performed in the formation of &#946;-SiC by the process of implantation of different carbon ion fluences of 1×1017, 2×1017, 5×1017, and 8×1017 atoms /cm2 at an ion energy of 65 keV into Si. It is observed that the average size of &#946;-SiC crystals decreased and the amount of &#946;-SiC crystals increased with the increase in the implanted fluences when the samples were annealed at 1100°C for 1 hr. However, it is observed that the amount of &#946;-SiC linearly increased with the implanted fluences up to 5×1017 atoms /cm2. Above this fluence the amount of &#946;-SiC appears to saturate. The stability of graphitic C-C bonds at 1100°C limits the growth of SiC precipitates in the sample implanted at a fluence of 8×1017 atoms /cm2 which results in the saturation behavior of SiC formation in the present study. Secondly, the carbon cluster formation process in silica and the characterization of formed clusters is presented. Silicon dioxide layers ~500 nm thick are thermally grown on a Si (100) wafer. The SiO2 layers are then implanted with 70 keV carbon ions at a fluence of 5×1017 atoms/cm2. The implanted samples are annealed 1100 °C for different time periods of 10 min., 30 min., 60 min., 90 min., and 120 min., in the mixture of argon and hydrogen gas (96 % Ar + 4% hydrogen). Photoluminescence spectroscopy reveals UV to visible emission from the samples. A detail mechanism of the photoluminescence and its possible origin is discussed ...
Date: May 2011
Creator: Poudel, Prakash Raj
Partner: UNT Libraries

Thorium and Uranium M-shell X-ray Production Cross Sections for 0.4 – 4.0 MeV Protons, 0.4 - 6.0 MeV Helium Ions, 4.5 – 11.3 MeV Carbon Ions, and 4.5 – 13.5 MeV Oxygen Ions.

Description: The M-shell x-ray production cross section for thorium and uranium have been determined for protons of energy 0.4 - 4.0 MeV, helium ions of energy 0.4 - 6.0 MeV, carbon ions of energy 4.5 - 11.3 MeV and oxygen ions of energy 4.5 - 13.5 MeV. The total cross sections and the cross sections for individual x-ray peaks in the spectrum, consisting of the following transitions Mz (M4-N2, M5-N3, M4-N3), Ma (M5-N6,7), Mb (M4-N6, M5-O3, M4- O2), and Mg (M4-O3, M5-P3, M3-N4, M3-N5), were compared to the theoretical values determined from the PWBA + OBKN and ECUSAR. The theoretical values for the carbon and oxygen ions were also modified to take into account the effects of multiple ionizations of the target atom by the heavier ions. It is shown that the results of the ECUSAR theory tend to provide better agreement with the experimental data.
Date: May 2011
Creator: Phinney, Lucas C.
Partner: UNT Libraries

Effects of 5-hydroxytryptamine on Mouse Lumbar Motor Activity During Postnatal Development

Description: The lumbar motor activity in isolated spinal cords of 72 postnatal Balb/C mice aged 2, 5, 10 and 21 days (PN2-21) was electroneurographically recorded (ENG) via bilateral ventral roots following treatment with three different concentrations (25, 100 and 200 pM) of the neurotransmitter, 5-hydroxytryptamine (5-HT), i.e., serotonin, to determine its effects on spinal pattern generation.
Date: December 1998
Creator: Lowe-Chatham, Janice E. (Janice Elaine)
Partner: UNT Libraries

Development and Validation of the Checklist for Differential Diagnosis of Attentional Problems

Description: The current study discussed the development and validation of the Checklist for Differential Diagnosis of Attentional Problems (CDDAP), a tool for use with adults seeking diagnosis and treatment of an Attention Deficit Hyperactivity Disorder. Normative data are provided on three subject groups (ADHD adults, controls, and adults with other psychiatric disorders). Convergent validity was established with the SCL-90, and criterion validity established through comparing scaled scores with final diagnoses. Overall, this measure was accurate at differentiating adults with ADHD from controls and adults with other psychiatric disorders. Results indicated that the CDDAP was also able to identify other psychiatric disorders with 71 to 92% accuracy, depending on the disorder.
Date: May 1999
Creator: Taylor, Cindy J.
Partner: UNT Libraries

Fluorine Adsorption and Diffusion in Polycrystalline Silica

Description: The measurement of fluorine penetration into archeological flint artifacts using Nuclear Reaction Analysis (NRA) has been reported to be a potential dating method. However, the mechanism of how fluorine is incorporated into the flint surface, and finally transported into the bulk is not well understood. This research focuses on the study of the fluorine uptake phenomenon of flint mineral in aqueous fluoride solutions. Both theoretical and experimental approaches have been carried out. In a theoretical approach, a pipe-diffusion model was used to simulate the complicated fluorine transportation problem in flint, in which several diffusion mechanisms may be involved.
Date: December 1998
Creator: Jin, Jian-Yue
Partner: UNT Libraries

A Novel Process for GeSi Thin Film Synthesis

Description: A unique process of fabricating a strained layer GexSi1-x on insulator is demonstrated. Such strained heterostructures are useful in the fabrication of high-mobility transistors. This technique incorporates well-established silicon processing technology e.g., ion implantation and thermal oxidation. A dilute GeSi layer is initially formed by implanting Ge+ into a silicon-on-insulator (SOI) substrate. Thermal oxidation segregates the Ge at the growing oxide interface to form a distinct GexSi1-x thin-film with a composition that can be tailored by controlling the oxidation parameters (e.g. temperature and oxidation ambient). In addition, the film thickness can be controlled by implantation fluence, which is important since the film forms pseudomorphically below 2×1016 Ge/cm2. Continued oxidation consumes the underlying Si leaving the strained GeSi film encapsulated by the two oxide layers, i.e. the top thermal oxide and the buried oxide. Removal of the thermal oxide by a dilute HF etch completes the process. Strain relaxation can be achieved by either of two methods. One involves vacancy injection by ion implantation to introduce sufficient open-volume within the film to compensate for the compressive strain. The other depends upon the formation of GeO2. If Ge is oxidized in the absence of Si, it evaporates as GeO(g) resulting in spontaneous relaxation within the strained film. Conditions under which this occurs have been discussed along with elaborated results of oxidation kinetics of Ge-ion implanted silicon. Rutherford backscattering spectrometry (RBS), ion channeling, Raman spectroscopy and scanning electron microscopy (SEM) were used as the characterization techniques.
Date: December 2007
Creator: Hossain, Khalid
Partner: UNT Libraries

Neutron Transmutation and Hydrogenation Study of Hg₁₋xCdxTe

Description: Anomalous Hall behavior of HgCdTe refers to a "double cross-over" feature of the Hall coefficient in p-type material, or a peak in the Hall mobility or Hall coefficient in n-type material. A magnetoconductivity tensor approach was utilized to identify presence of two electrons contributing to the conduction as well as transport properties of each electron in the material. The two electron model for the mobility shows that the anomalous Hall behavior results from the competition of two electrons, one in the energy gap graded region near the CdZnTe/HgCdTe interface with large band gap and the other in the bulk of the LPE film with narrow band gap. Hg0.78Cd0.22Te samples grown by LPE on CdZnTe(111B)-oriented substrates were exposed to various doses of thermal neutrons (~1.7 x 1016 - 1.25 x 1017 /cm2) and subsequently annealed at ~220oC for ~24h in Hg saturated vapor to recover damage and reduce the presence of Hg vacancies. Extensive Magnetotransport measurements were performed on these samples. SIMS profile for impurities produced by neutron irradiation was also obtained. The purpose for this study is to investigate the influence of neutron irradiation on this material as a basis for further study on HgCdTe74Se. The result shows that total mobility is observed to decrease with increased neutron dose and can be fitted by including a mobility inverse proportional to neutron dose. Electron introduction rate of thermal neutron is much smaller than that of fission neutrons. Total recovering of the material is suggested to have longer time annealing. Using Kane's model, we also fitted carrier concentration change at low temperature by introducing a donor level with activation energy changing with temperature. Results on Se diffusion in liquid phase epitaxy (LPE) grown HgCdTe epilayers is reported. The LPE Hg0.78Cd0.22Te samples were implanted with Se of 2.0×1014/cm2 at 100keV and annealed at ...
Date: December 2007
Creator: Zhao, Wei
Partner: UNT Libraries

Ion-Induced Damage In Si: A Fundamental Study of Basic Mechanisms over a Wide Range of Implantation Conditions

Description: A new understanding of the damage formation mechanisms in Si is developed and investigated over an extended range of ion energy, dose, and irradiation temperature. A simple model for dealing with ion-induced damage is proposed, which is shown to be applicable over the range of implantation conditions. In particular the concept of defect "excesses" will be discussed. An excess exists in the lattice when there is a local surplus of one particular type of defect, such as an interstitial, over its complimentary defect (i.e., a vacancy). Mechanisms for producing such excesses by implantation will be discussed. The basis of this model specifies that accumulation of stable lattice damage during implantation depends upon the excess defects and not the total number of defects. The excess defect model is validated by fundamental damage studies involving ion implantation over a range of conditions. Confirmation of the model is provided by comparing damage profiles after implantation with computer simulation results. It will be shown that transport of ions in matter (TRIM) can be used effectively to model the ion-induced damage profile, i.e. excess defect distributions, by a simple subtraction process in which the spatially correlated defects are removed, thereby simulating recombination. Classic defect studies illuminate defect interactions from concomitant implantation of high- and medium-energy Si+-self ions. Also, the predictive quality of the excess defect model was tested by applying the model to develop several experiments to engineer excess defect concentrations to substantially change the nature and distribution of the defects. Not only are the excess defects shown to play a dominant role in defect-related processing issues, but their manipulation is demonstrated to be a powerful tool in tailoring the implantation process to achieve design goals. Pre-amorphization and dual implantation of different energetic ions are two primary investigative tools used in this work. Various analyses, ...
Date: May 2006
Creator: Roth, Elaine Grannan
Partner: UNT Libraries

Investigation of Selected Optically-Active Nanosystems Fashioned using Ion Implantation

Description: Opto-electronic semiconductor technology continues to grow at an accelerated pace, as the industry seeks to perfect devices such as light emitting diodes for purposes of optical processing and communication. A strive for greater efficiency with shrinking device dimensions, continually pushes the technology from both a design and materials aspect. Nanosystems such a quantum dots, also face new material engineering challenges as they enter the realm of quantum mechanics, with each system and material having markedly different electronic properties. Traditionally, the semiconductor industry has focused on materials such Group II-VI and III-V compounds as the basis material for future opto-electronic needs. Unfortunately, these material systems can be expensive and have difficulties integrating into current Si-based technology. The industry is reluctant to leave silicon due in part to silicon's high quality oxide, and the enormous amount of research invested into silicon based circuit fabrication. Although recently materials such as GaN are starting to dominate the electro-optical industry since a Si-based substitute has not been found. The purpose of the dissertation was to examine several promising systems that could be easily integrated into current Si-based technology and also be produced using simple inexpensive fabrication techniques such ion implantation. The development of optically active nano-sized precipitates in silica to form the active layer of an opto-electronic device was achieved with ion implantation and thermal annealing. Three material systems were investigated. These systems consisted of carbon, silicon and metal silicide based nanocrystals. The physical morphology and electronic properties were monitored using a variety of material characterization techniques. Rutherford backscattering/channeling were used to monitor elemental concentrations, photoluminescence was used to monitor the opto-electronic properties and transmission electron microscopy was used to study the intricate morphology of individual precipitates. The electronic properties and the morphology were studied as a function of implant dose, anneal times and anneal ...
Date: May 2006
Creator: Mitchell, Lee
Partner: UNT Libraries

Monte Carlo simulation and experimental studies of the production of neutron-rich medical isotopes using a particle accelerator.

Description: The developments of nuclear medicine lead to an increasing demand for the production of radioisotopes with suitable nuclear and chemical properties. Furthermore, from the literature it is evident that the production of radioisotopes using charged-particle accelerators instead of nuclear reactors is gaining increasing popularity. The main advantages of producing medical isotopes with accelerators are carrier free radionuclides of short lived isotopes, improved handling, reduction of the radioactive waste, and lower cost of isotope fabrication. Proton-rich isotopes are the result of nuclear interactions between enriched stable isotopes and energetic protons. An interesting observation is that during the production of proton-rich isotopes, fast and intermediately fast neutrons from nuclear reactions such as (p,xn) are also produced as a by-product in the nuclear reactions. This observation suggests that it is perhaps possible to use these neutrons to activate secondary targets for the production of neutron-rich isotopes. The study of secondary radioisotope production with fast neutrons from (p,xn) reactions using a particle accelerator is the main goal of the research in this thesis.
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Date: May 2002
Creator: Rosencranz, Daniela Necsoiu
Partner: UNT Libraries

A New Approach for Transition Metal Free Magnetic Sic: Defect Induced Magnetism After Self-ion Implantation

Description: SiC has become an attractive wide bandgap semiconductor due to its unique physical and electronic properties and is widely used in high temperature, high frequency, high power and radiation resistant applications. SiC has been used as an alternative to Si in harsh environments such as in the oil industry, nuclear power systems, aeronautical, and space applications. SiC is also known for its polytypism and among them 3C-SiC, 4H-SiC and 6H-SiC are the most common polytypes used for research purposes. Among these polytypes 4H-SiC is gaining importance due to its easy commercial availability with a large bandgap of 3.26 eV at room temperature. Controlled creation of defects in materials is an approach to modify the electronic properties in a way that new functionality may result. SiC is a promising candidate for defect-induced magnetism on which spintronic devices could be developed. The defects considered are of room temperature stable vacancy types, eliminating the need for magnetic impurities, which easily diffuse at room temperature. Impurity free vacancy type defects can be created by implanting the host atoms of silicon or carbon. The implantation fluence determines the defect density, which is a critical parameter for defect induced magnetism. Therefore, we have studied the influence of low fluence low energy silicon and carbon implantation on the creation of defects in n-type 4H-SiC. The characterization of the defects in these implanted samples was performed using the techniques, RBS-channeling and Raman spectroscopy. We have also utilized these characterization techniques to analyze defects created in much deeper layers of the SiC due to implantation of high energy nitrogen ions. The experimentally determined depths of the Si damage peaks due to low energy (60 keV) Si and C ions with low fluences (< 1015 cm-2) are consistent with the SRIM-2011 simulations. From RBS-C Si sub-lattice measurements for different fluences ...
Date: May 2013
Creator: Kummari, Venkata Chandra Sekhar
Partner: UNT Libraries

L- and M-Shell X-Ray Production Cross Sections of Neodymium Gadolinium, Holmium, Ytterbium, Gold and Lead by 25-MeV Carbon and 32-MeV Oxygen Ions

Description: L- and M-shell x-ray production cross sections have been measured for thin solid targets of neodymium, gadolinium, holmium, ytterbium, gold, and lead by 25 MeV 12/6C^q+ (q=4,5,6) and by 32 MeV 16/8O^q+ (q=5,7,8). The cross sections were determined from measurements made with thin targets (< 2.5 μg/cm2). For projectiles with one or two K-shell vacancies, the target x-ray production cross sections were found to be enhanced over those for projectiles without a K-shell vacancy. The sum of direct ionization to the continuum (DI) plus electron capture (EC) to the L, M, N... shells and EC to the K-shell of the projectile have been extracted from the data. The results are compared to the predictions of first Born theories, i.e., plane wave Born approximation for DI and Oppenheimer-Brinkman-Kramers formula of Nikolaev for EC and to the ECPSSR approach that accounts for Energy loss and Coulomb deflection of the projectile as well as for Relativistic and Perturbed Stationary States of inner shell electrons.
Date: August 1987
Creator: Andrews, Mike C., 1949-
Partner: UNT Libraries

Carbon K-Shell X-Ray and Auger-Electron Cross Sections and Fluorescence Yields for Selected Molecular Gases by 0.6 To 2 .0 MeV Proton Impact

Description: Absolute K-shell x-ray cross sections and Auger-electron cross sections are measured for carbon for 0.6 to 2.0 MeV proton incident on CH₄, n-C₄H₁₀ (n-Butane), i-C₄H₁₀ (isobutane), C₆H₆ (Benzene), C₂H₂ (Acetylene), CO and CO₂. Carbon K-shell fluorescence yields are calculated from the measurements of x-ray and Auger-electron cross sections. X-ray cross sections are measured using a variable geometry end window proportional counter. An alternate method is described for the measurement of the transmission of the proportional counter window. Auger electrons are detected by using a constant transmission energy Π/4 parallel pi ate electrostatic analyzer. Absolute carbon K-shell x-ray cross sections for CH₄ are compared to the known results of Khan et al. (1965). Auger-electron cross sections for proton impact on CH₄ are compared to the known experimental values of RΦdbro et al. (1979), and to the theoretical predictions of the first Born and ECPSSR. The data is in good agreement with both the first Born and ECPSSR, and within our experimental uncertainties with the measurements of RΦdbro et al. The x-ray cross sections, Auger-electron cross sections and fluorescence yields are plotted as a function of the Pauling charge, and show significant variations. These changes in the x-ray cross sections are compared to a model based on the number of electrons present in the 2s and 2p sub shells of these carbon based molecules. The changes in the Auger-electron cross sections are compared to the calculations of Matthews and Hopkins. The variation in the fluorescence yield is explained on the basis of the multiconfiguration Dirac-Fock model.
Date: August 1986
Creator: Bhalla, Raj P. (Raj Pal), 1948
Partner: UNT Libraries

Electron-Ion Time-of-Flight Coincidence Measurements of K-K Electron Capture, Cross Sections for Nitrogen, Methane, Ethylene, Ethane, Carbon Dioxide and Argon (L-K) Targets

Description: Protons with energies ranging from 0.4 to 2.0 MeV were used to measure K-shell vacancy production cross sections (oVK) for N_2, CH_4, C_2H_4, C_2H_6, and CO_2 gas targets under single collision conditions. An electron-ion time-of-flight coincidence technique was used to determind the ration of the K-K electron capture cross section, OECK, to the K-vacancy production cross section, oVK. These ratios were then combined with the measured values of oVK to extract the K-K electron capture cross sections. Measurements were also made for protons of the same energy range but with regard to L-shell vacancy production and L-K electron capture for Ar targets. In addition, K-K electron capture cross sections were measured for 1.0 to 2.0 Mev 42He^_ ions on CH_4.
Date: May 1986
Creator: Toten, Arvel D.
Partner: UNT Libraries

K-, L-, and M-Shell X-Ray Production Cross Sections for Beryllium, Aluminum and Argon Ions Incident Upon Selected Elements

Description: Incident 0.5 to 2.5 MeV charged particle beams were used to ionize the inner-shells of selected targets and study their subsequent emission of characteristic x-rays. ⁹Be⁺ ions were used to examine K-shell x-ray production from thin F, Na, Al, Si, P, Cl, and K targets, L-shell x-ray production from thin Cu, An, Ge, Br, Zr and Ag targets, and M-shell x-ray production from thin Pr, Nd, Eu, Dy, Ho, Hf, W, Au, Pb and Bi targets. L-shell x-ray production cross sections were also measured for ²⁷Al⁺ ions incident upon Ni, Cu, Zn, As, Zr, and Pd targets. M-shell x-ray production cross sections were measure for ²⁷Al⁺ and ⁴⁰Ar⁺ ions incident upon Pr, Nd, Gd, Dy, Lu, Hf, Au, Pb, Bi, and U targets. These measurements were performed using the 2.5 MV Van de Graaff accelerator at North Texas State University. The x-rays were detected with a Si(Li) detector whose efficiency was determined by fitting a theoretical photon absorption curve to experimentally measure values. The x-ray yields were normalized to the simultaneously measured Rutherford backscattered (RBS) yields which resulted in an x-ray production cross section per incident ion. The RBS spectrum was obtained using a standard surface barrier detector calibrated for to account for the "pulse height defect." The experimental results are compared to the predictions of both the first Born and ECPSSR theories; each of which is composed of two parts, the direct ionization (DI) of the target electron to the continuum and the capture (EC) of the target electron to the projectile. The first Born describes DI by the Plane-Wave-Born-Approximation (PWBA) and EC by the Oppenheimer-Brinkman-Kramers treatment of Nikolaev (OBKN). ECPSSR expands upon the first Born by using perturbed (PSS) and relativistic (R) target electron wave functions in addition to considering the energy loss (E) of the projectile in ...
Date: December 1986
Creator: Price, Jack Lewis
Partner: UNT Libraries