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Solutions to Defect-Related Problems in Implanted Silicon by Controlled Injection of Vacancies by High-Energy Ion Irradiation

Description: Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Pre-amorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted boron has been observed in pre-amorphized Si. The defects driving this enhanced boron diffusion are thought to be the extended interstitial-type defects that form below the amorphous-crystalline interface during implantation. A dual implantation process was applied in an attempt to reduce or eliminate this interfacial defect band. High-energy, ion implantation is known to inject a vacancy excess in this region. Vacancies were implanted at a concentration coincident with the excess interstitials below the a-c interface to promote recombination between the two defect species. Preliminary results indicate that a critical fluence, i.e., a sufficient vacancy concentration, will eliminate the interstitial defects. The effect of the reduction or elimination of these interfacial defects upon TED of boron will be discussed. Rutherford backscattering/channeling and cross section transmission electron microscopy analyses were used to characterize the defect structure within the implanted layer. Secondary ion mass spectroscopy was used to profile the dopant distributions.
Date: November 4, 1998
Creator: Duggan, J.L.; Holland, O.W. & Roth, E.
Partner: UNT Libraries Government Documents Department

The Study of Phosphors Efficiency and Homogeneity using a Nuclear Microprobe

Description: Ion Beam Induced Luminescence (IBIL) and Ion Beam Induced Charge Collection (IBICC) have been applied in the study of the luminescence emission efficiency and investigation of the homogeneity of the luminescence emission in phosphors. The IBIL imaging was performed by using sharply focused ion beams or broad/partially-focused ion beams. The luminescence emission homogeneity in samples was examined to reveal possible distributed crystal-defects that may lead to the inhomogeneity of the luminescence emission in samples.The purpose of the study is to search for suitable luminescent thin films that have high homogeneity of luminescence emission, large IBIL efficiency under heavy ion excitation, and can be placed as a thin layer on the top of microelectronic devices to be analyzed with Ion Photon Emission Microscopy (IPEM). The emission yield was found to be low for organic materials, due to saturation of the light output dependence on the energy deposition of heavy ions. The emission yield of a typical Bicron plastic scintillator is about 70 photons/ion/micron. Inorganic materials may have higher IBIL yield under high-energy and heavy-ion excitation, but the challenging problem is the inhomogeneity of the IBIL emission. The IBIL image techniques are applied in the investigation of the homogeneity of a GaN epitaxial thin film, a zircon single crystal and a thin layer coated by Thiogallate(EuII) ceramic.
Date: December 8, 2000
Creator: YANG,C.; DOYLE,BARNEY L.; NIGAM,M.; EL BOUANANI,M.; DUGGAN,J.L. & MCDANIEL,F.D.
Partner: UNT Libraries Government Documents Department

Ion Beam Induced Charge Collection (IBICC) from Integrated Circuit Test Structures Using a 10 MeV Carbon Microbeam

Description: As future sizes of Integrated Circuits (ICs) continue to shrink the sensitivity of these devices, particularly SRAMs and DRAMs, to natural radiation is increasing. In this paper, the Ion Beam Induced Charge Collection (IBICC) technique is utilized to simulate neutron-induced Si recoil effects in ICS. The IBICC measurements, conducted at the Sandia National Laboratories employed a 10 MeV carbon microbeam with 1pm diameter spot to scan test structures on specifically designed ICS. With the aid of layout information, an analysis of the charge collection efficiency from different test areas is presented. In the present work a 10 MeV Carbon high-resolution microbeam was used to demonstrate the differential charge collection efficiency in ICS with the aid of the IC design Information. When ions strike outside the FET, the charge was only measured on the outer ring, and decreased with strike distance from this diode. When ions directly strike the inner and ring diodes, the collected charge was localized to these diodes. The charge for ions striking the gate region was shared between the inner and ring diodes. I The IBICC measurements directly confirmed the interpretations made in the earlier work.
Date: November 18, 1998
Creator: Aton, T.J.; Doyle, B.L.; Duggan, J.L.; El Bouanani, M.; Guo, B.N.; McDaniel, F.D. et al.
Partner: UNT Libraries Government Documents Department

Ion Beam Induced Charge Collection (IBICC) Studies of Integrated Circuits Using a 10MeV Carbon Microbeam

Description: As feature sizes of Integrated Circuits (ICs) continue to shrinlL the sensitivity of these devices, particularly SRAMS and DR4Ms, to natural radiation is increasing. The radiation can lead to the uncontrolled deposition of charge within an IC, which ean alter, for example, the memoty state of a bit and thereby produce what is edled a `SOW error, or Single Event Upset (SEU). The response of ICS to natural background radiation is therefore of great coneem regarding the reliability of Mure devices. In this paper, we present results where Ion Beam Induced Charge Collection (TBICC) technique was used to simulate neutron-induced Si recoil dlkcts in IC test structures. The present wo~ wnducted at the San& National Laboratories, uses a 10 MeV Carbon mierobeam with 1 pm spot to scan test structures on specifically designed ICS. The test structure contains junctions typical of S RAMS and DRAMs. Charge is eolleeted from different areas of the IC under various conditions of junction back bias. The data are digitized and displayed as 3D images combined with KY) coordination. With the aid of IC layout informatio~ the 3D images are sepamted into difTerent layers to allow the identification of charge collection etlciency in the test structures. An analysis of the charge collection efficiency from dillerent test areas is given.
Date: September 29, 1998
Creator: Aton, T.J.; Bouanani, M. E.; Doyle, B.L.; Duggan, J.L.; Guo, B.N.; McDaniel, F.D. et al.
Partner: UNT Libraries Government Documents Department

Microbeam Studies of Diffusion Time Resolved Ion Beam Induced Charge Collection from Stripe-Like Junctions

Description: To design more radiation tolerant Integrated Circuits (ICs), it is essential to create and test accurate models of ionizing radiation induced charge collection dynamics within microcircuits. A new technique, Diffusion Time Resolved Ion Beam Induced Charge Collection (DTRIBICC), is proposed to measure the average arrival time of the diffused charge at the junction. Specially designed stripe-like junctions were experimentally studied using a 12 MeV carbon microbeam with a spot size of 1 {micro}m. The relative arrival time of ion-generated charge is measured along with the charge collection using a multiple parameter data acquisition system. The results show the importance of the diffused charge collection by junctions, which is especially significant in accounting for Multiple Bit Upset (MBUs) in digital devices.
Date: June 14, 2000
Creator: GUO,B.N.; BOUANANI,M.E.; RENFROW,S.N.; WALSH,DAVID S.; DOYLE,BARNEY L.; ATON,T.J. et al.
Partner: UNT Libraries Government Documents Department