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Stability of Field Emitter Arrays to Oxygen Exposures

Description: The purpose of these experiments was to determine the degradation mechanisms of molybdenum based field emitter arrays to oxygen exposures and to improve the overall reliability. In addition, we also evaluated the emission current stability of gold-coated field emitter arrays to oxygen exposures. oxygen at 1x10-6 torr was introduced into the chamber through a leak valve for different lengths of time and duty cycles. To ensure identical oxygen exposure and experimental measurement conditions, tips on half the area of the FEA were fully coated with gold and the other half were left uncoated. The emission current from the gold coated half was found to degrade much less than that from the uncoated half, in the presence of oxygen. Also in the absence of oxygen, the emission current recovery for the gold-coated side was much quicker than that for the uncoated side.
Date: December 2002
Creator: Godbole, Soumitra Kumar
Partner: UNT Libraries

Application of Thermomechanical Characterization Techniques to Bismuth Telluride Based Thermoelectric Materials

Description: The thermoelectric properties of bismuth telluride based thermoelectric (TE) materials are well-characterized, but comparatively little has been published on the thermomechanical properties. In this paper, dynamic mechanical analysis (DMA) and differential scanning calorimetry data for bismuth telluride based TE materials is presented. The TE materials' tan delta values, indicative of viscoelastic energy dissipation modes, approached that of glassy or crystalline polymers, were greater than ten times the tan delta of structural metals, and reflected the anisotropic nature of TE materials. DMA thermal scans showed changes in mechanical properties versus temperature with clear hysteresis effects. These results showed that the application of DMA techniques are useful for evaluation of thermophysical and thermomechanical properties of these TE materials.
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Date: August 2002
Creator: White, John B.
Partner: UNT Libraries

The Role of Crystallographic Texture in Achieving Low Friction Zinc Oxide Nanolaminate Films

Description: Metal oxide nanolaminate films are potential high temperature solid lubricants due to their ability to exhibit significant plasticity when grain size is reduced to the nanometer scale, and defective growth structure is achieved by condensation of oxygen vacancies to form intrinsic stacking faults. This is in contrast to conventional microcrystalline and single crystal oxides that exhibit brittle fracture during loading in a sliding contact. This study emphasizes the additional effect of growth orientation, in particular crystallographic texture, on determining the sliding friction behavior in nanocolumnar grain zinc oxide films grown by atomic layer deposition. It was determined that zinc oxide low (0002) versus higher (101 ̅3) surface energy crystallographic planes influenced the sliding friction coefficient. Texturing of the (0002) grains resulted in a decreased adhesive component of friction thereby lowering the sliding friction coefficient to ~0.25, while the friction coefficient doubled to ~0.5 with increasing contribution of surface (101 ̅3) grains. In addition, the variation of the x-ray grazing incident angle from 0.5° to 5° was studied to better understand the surface grain orientation as a function of ZnO layer thickness in one versus four bilayer nanolaminates where the under layer (seed layer) was load-bearing Zn(Ti,Zr)O3.
Date: December 2015
Creator: Mojekwu, Nneoma
Partner: UNT Libraries

Molecular Dynamics Simulations of the Structures of Europium Containing Silicate and Cerium Containing Aluminophosphate Glasses

Description: Rare earth ion doped glasses find applications in optical and photonic devices such as optical windows, laser, and optical amplifiers, and as model systems for immobilization of nuclear waste. Macroscopic properties of these materials, such as luminescence efficiency and phase stability, depend strongly on the atomic structure of these glasses. In this thesis, I have studied the atomic level structure of rare earth doped silicate and aluminophosphate glasses by using molecular dynamics simulations. Extensive comparisons with experimental diffraction and NMR data were made to validate the structure models. Insights on the local environments of rare earth ions and their clustering behaviors and their dependence on glass compositions have been obtained. In this thesis, MD simulations have been used to investigate the structure of Eu2O3-doped silica and sodium silicate glasses to understand the glass composition effect on the rare earth ions local environment and their clustering behaviors in the glass matrix, for compositions with low rare earth oxide concentration (~1mol%). It was found that Eu–O distances and coordination numbers were different in silica (2.19-2.22 Å and 4.6-4.8) from those in sodium silicate (2.32 Å and 5.8). High tendencies of Eu clustering and short Eu-Eu distances in the range 3.40-3.90 Å were observed in pure silica glasses as compared to those of silicate glasses with much better dispersed Eu3+ ions and lower probability to form clusters. The results show Eu3+ clustering behavior dependence on the system size and suggest for low doping levels, over 12,000 atoms to obtain statistical meaningful results on the local environment and clustering for rigid silica-based glasses. The structures of four cerium aluminophosphate glasses have also been studied using MD simulations for systems of about 13,000 atoms to investigate aluminum and cerium ion environment and their distribution. P5+ and Al3+ local structures were found stable while those of ...
Date: August 2012
Creator: Kokou, Leopold Lambert Yaovi
Partner: UNT Libraries

Fabrication of MOS capacitor and transitor structure using contact photolithography.

Description: This problem in lieu of thesis report describes a practical photolithographic method to produce micro patterns on metal-oxide-semiconductor or metal-oxide-semiconductor-metal layers for electrical measurements. The desired patterns are then transferred from the photo mask to the photoresist-coated metal film by exposure, followed by wet etching. In the procedure described in this report, it was observed that microstructures as small as 27 mm with an edge roughness of ~ 2 mm can be reproducibly generated with this process. MOS capacitors and transistors structures can be fabricated by using this technique. The method described in this report requires access to only simple facilities so that it is relatively inexpensive, and the overall time required for the whole process is short.
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Date: August 2002
Creator: Su, Danni
Partner: UNT Libraries

Study of Gate Electrode Materials on High K Dielectrics

Description: This problem in lieu of thesis report presents a study on gate electrode materials on high K dielectrics, including poly-SiGe and Ru. The stability of poly-SiGe in direct contact with Hf silicon-oxynitride (HfSiON) is studied by rapid thermal annealing (RTA), Rutherford backscattering spectrometry (RBS), X-ray photoelectron spectroscopy (XPS) and high resolution transmission electron microscopy (HRTEM). By performing a series of RTA treatments we found that as RTA thermal budgets reach 1050 C for 30s, the poly-SiGe layer begins to intermix with the HfSiON film, as observed by TEM. The maximum annealing condition for the Hf0.14Si0.23O0.46N0.17 film to remain stable in contact with poly-SiGe is 1050 C for 20s in high purity N2(99.9%) ambient. We also found that after 1000 C annealing for 60s in a nitrogen ambient, the poly-SiGe crystal phase structure was changed from a columnar structure to a large grain structure. For a metal gate, Ru was studied to determine N2annealing effects on sheet resistance of Ru sample electrodes and electrical characterization of Ru/HfSiOx/Si stack. Results show that a pure Ru metal gate is not a good choice for high k materials since it is hard to etch off, and different annealing conditions can cause large changes in the electrical behavior.
Date: August 2003
Creator: Yao, Chun
Partner: UNT Libraries

Materials properties of hafnium and zirconium silicates: Metal interdiffusion and dopant penetration studies.

Description: Hafnium and Zirconium based gate dielectrics are considered potential candidates to replace SiO2 or SiON as the gate dielectric in CMOS processing. Furthermore, the addition of nitrogen into this pseudo-binary alloy has been shown to improve their thermal stability, electrical properties, and reduce dopant penetration. Because CMOS processing requires high temperature anneals (up to 1050 °C), it is important to understand the diffusion properties of any metal associated with the gate dielectric in silicon at these temperatures. In addition, dopant penetration from the doped polysilicon gate into the Si channel at these temperatures must also be studied. Impurity outdiffusion (Hf, Zr) from the dielectric, or dopant (B, As, P) penetration through the dielectric into the channel region would likely result in deleterious effects upon the carrier mobility. In this dissertation extensive thermal stability studies of alternate gate dielectric candidates ZrSixOy and HfSixOy are presented. Dopant penetration studies from doped-polysilicon through HfSixOy and HfSixOyNz are also presented. Rutherford backscattering spectroscopy (RBS), heavy ion RBS (HI-RBS), x-ray photoelectron spectroscopy (XPS), high resolution transmission electron microscopy (HR-TEM), and time of flight and dynamic secondary ion mass spectroscopy (ToF-SIMS, D-SIMS) methods were used to characterize these materials. The dopant diffusivity is calculated by modeling of the dopant profiles in the Si substrate. In this disseration is reported that Hf silicate films are more stable than Zr silicate films, from the metal interdiffusion point of view. On the other hand, dopant (B, As, and P) penetration is observed for HfSixOy films. However, the addition of nitrogen to the Hf - Si - O systems improves the dopant penetration properties of the resulting HfSixOyNz films.
Date: August 2002
Creator: Quevedo-Lopez, Manuel Angel
Partner: UNT Libraries

Modifications of epoxy resins for improved mechanical and tribological performances and their effects on curing kinetics.

Description: A commercial epoxy, diglycidyl ether of bisphenol-A, was modified by two different routes. One was the addition of silica to produce epoxy composites. Three different silane coupling agents, glycidyloxypropyl trimethoxy silane (GPS), -methacryloxypropyl trimethoxy silane (MAMS) and 3-mercaptopropyltriethoxy silane (MPS), were used as silica-surface modifiers. The effects of silica content, together with the effects of chemical surface treatment of silica, were studied. The results indicate that epoxy composites with silica exhibit mechanical and tribological properties as well as curing kinetics different than the pure epoxy. The optimum silica content for improved mechanical and tribological properties (low friction coefficient and wear rate) was different for each type of silane coupling agent. An unequivocal correlation between good mechanical and improved tribological properties was not found. Activation energy of overall reactions was affected by the addition of silica modified with MAMS and MPS, but not with GPS. The second route was modification by fluorination. A new fluoro-epoxy oligomer was synthesized and incorporated into a commercial epoxy by a conventional blending method. The oligomer functioned as a catalyst in the curing of epoxy and polyamine. Thermal stability of the blends decreased slightly at a high oligomer content. Higher wear resistance, lower friction coefficient and higher toughness were found with increasing oligomer content; thus in this case there was a correlation between good mechanical and improved tribological properties. The results indicated that increasing toughness and formation of a transfer film contribute to improved tribological performances.
Date: May 2008
Creator: Chonkaew, Wunpen
Partner: UNT Libraries

Hydrophobic, fluorinated silica xerogel for low-k applications.

Description: A new hydrophobic hybrid silica film was synthesized by introducing one silicon precursor (as modifiers) into another precursor (network former). Hybrid films have improved properties. Hydrolysis and condensation of dimethyldiethoxysilane (DMDES) (solvent (EtOH) to DMDES molar ratio R = 4, water to DMDES molar ratio r = 4, 0.01 N HCl catalyst) was analyzed using high-resolution liquid 29Si NMR. It was found that after several hours, DMDES hydrolyzed and condensed into linear and cyclic species. Films from triethoxyfluorosilane (TEFS) have been shown to be promising interlayer dielectric materials for future integrated circuit applications due to their low dielectric constant and high mechanical properties (i.e., Young's modulus (E) and hardness (H)). Co-condensing with TEFS, linear structures from DMDES hydrolysis and condensation reactions rendered hybrid films hydrophobic, and cyclic structures induced the formation of pores. Hydrophobicity characterized by contact angle, thermal stability by thermogravimetric analysis (TGA), Fourier transform Infrared spectroscopy (FTIR), contact angle, and dynamic secondary ion mass spectroscopy (DSIMS), dielectric constant determined by impedance measurement, and mechanical properties (E and H) determined by nanoindentation of TEFS and TEFS + DMDES films were compared to study the effect of DMDES on the TEFS structure. Hybrid films were more hydrophobic and thermally stable. DMDES incorporation affected the dielectric constant, but showed little enhancement of mechanical properties.
Date: May 2004
Creator: Zhang, Zhengping
Partner: UNT Libraries

Trapping of hydrogen in Hf-based high κ dielectric thin films for advanced CMOS applications.

Description: In recent years, advanced high κ gate dielectrics are under serious consideration to replace SiO2 and SiON in semiconductor industry. Hafnium-based dielectrics such as hafnium oxides, oxynitrides and Hf-based silicates/nitrided silicates are emerging as some of the most promising alternatives to SiO2/SiON gate dielectrics in complementary metal oxide semiconductor (CMOS) devices. Extensive efforts have been taken to understand the effects of hydrogen impurities in semiconductors and its behavior such as incorporation, diffusion, trapping and release with the aim of controlling and using it to optimize the performance of electronic device structures. In this dissertation, a systematic study of hydrogen trapping and the role of carbon impurities in various alternate gate dielectric candidates, HfO2/Si, HfxSi1-xO2/Si, HfON/Si and HfON(C)/Si is presented. It has been shown that processing of high κ dielectrics may lead to some crystallization issues. Rutherford backscattering spectroscopy (RBS) for measuring oxygen deficiencies, elastic recoil detection analysis (ERDA) for quantifying hydrogen and nuclear reaction analysis (NRA) for quantifying carbon, X-ray diffraction (XRD) for measuring degree of crystallinity and X-ray photoelectron spectroscopy (XPS) were used to characterize these thin dielectric materials. ERDA data are used to characterize the evolution of hydrogen during annealing in hydrogen ambient in combination with preprocessing in oxygen and nitrogen.
Date: December 2007
Creator: Ukirde, Vaishali
Partner: UNT Libraries

Stimuli-responsive microgels for self-assembled crystalline structures and controlled drug release.

Description: Tissue response to PNIPAM and HPC nanoparticles has been studied by implantation method. The results suggest that both PNIAPM and HPC nanoparticles possess good biocompatibility and they may serve as a good carrier for the applications of controlled delivery. Rheological properties of dispersions of IPN microgels composed of PNIPAM and PAAc have been studied. It is found that the IPN microgel dispersion can undergo a sol-gel transition at temperature above 33°C. In vivo drug release experiments suggest that the gelation procedure creates a diffusion barrier and thus leads to slow release. An emulsion method has been used to grow columnar crystals by mixing PNIPAM microgel dispersions with organic solvents. Effect of both temperature and microgel concentration on formation of columnar crystals has been studied. PNIPAM-co-NMA microgels have been used for the fabrication of crystalline hydrogel films by self-crosslinking microgels. The hydrogel film exhibits an iridescent. The thermally responsive properties and mechanical properties of this film have been studied. Melting temperature (Tm) of colloidal crystals self-assembled with PNIPAM-co-AAc microgels has been investigated as a function of pH, salt concentration and microgel concentration. It is revealed that Tm increases as pH value increases; Tm decreases with increase of salt concentration; Tm increases as microgel concentration increases. Phase behavior of PNIPAM-co-HEAc microgel dispersions has been investigated. It is observed that these microgel dispersions exhibit liquid, crystal, and glass phase. As microgel size increases, crystal phase shifts to low concentration range. As temperature increases, crystal phase shifts to high concentration ranges. These colloidal crystals can be stabilized by NaOH-induced gelation. Effect of NaOH concentration on formation of physical gelation has been investigated.
Date: August 2009
Creator: Zhou, Jun
Partner: UNT Libraries

Scratch Modeling of Polymeric Materials with Molecular Dynamics

Description: It is impossible to determine the amount of money that is spent every replacing products damaged from wear, but it is safe to assume that it is in the millions of dollars. With metallic materials, liquid lubricants are often used to prevent wear from materials rubbing against one another. However, with polymeric materials, liquid lubricants cause swelling, creating an increase in friction and therefore increasing the wear. Therefore, a different method or methods to mitigate wear in polymers should be developed. For better understanding of the phenomenon of wear, scratch resistance testing can be used. For this project, classic molecular dynamics is used to study the mechanics of nanometer scale scratching on amorphous polymeric materials. As a first approach, a model was created for polyethylene, considering intramolecular and intermolecular interactions as well as mass and volume of the CH2 monomers in a polymer chain. The obtained results include analysis of penetration depth and recovery percentage related to indenter force and size.
Date: August 2012
Creator: Hilbig, Travis
Partner: UNT Libraries

Biodegradable Poly(hydroxy Butyrate-co-valerate) Nanocomposites And Blends With Poly(butylene Adipate-co-terephthalate) For Sensor Applications

Description: The utilization of biodegradable polymers is critical for developing “cradle to cradle” mindset with ecological, social and economic consequences. Poly(hydroxy butyrate-co-valerate) (PHBV) shows significant potential for many applications with a polypropylene equivalent mechanical performance. However, it has limitations including high crystallinity, brittleness, small processing window, etc. which need to be overcome before converting them into useful products. Further the development of biodegradable strain sensing polymer sensors for structural health monitoring has been a growing need. In this dissertation I utilize carbon nanotubes as a self sensing dispersed nanofiller. The impact of its addition on PHBV and a blend of PHBV with poly(butylene adipate-co-terephthalate) (PBAT) polymer was examined. Nanocomposites and blends of PHBV, PBAT, and MWCNTs were prepared by melt-blending. The effect of MWCNTs on PHBV crystallinity, crystalline phase, quasi-static and dynamic mechanical property was studied concurrently with piezoresistive response. In PHBV/PBAT blends a rare phenomenon of melting point elevation by the addition of low melting point PBAT was observed. The blends of these two semicrystalline aliphatic and aromatic polyesters were investigated by using differential scanning calorimetry, small angle X-ray scattering, dynamic mechanical analysis, surface energy measurement by contact angle method, polarized optical and scanning electron microscopy, and rheology. The study revealed a transition of immiscible blend compositions to miscible blend compositions across the 0-100 composition range. PHBV10, 20, and 30 were determined to be miscible blends based on a single Tg and rheological properties. The inter-relation between stress, strain, morphological structure and piezoresistive response of MWCNT filled PHBV and PHBV/PBAT blend system was thoroughly investigated. The outcomes of piezoreistivity study indicated MWCNT filled PHBV and PHBV/PBAT blend system as a viable technology for structural health monitoring. Finally, the compostability of pure polymer, blend system, and MWCNT filled system was studied indicating that PBAT and CNT decreased the biodegradability of PHBV ...
Date: December 2011
Creator: Vidhate, Shailesh.
Partner: UNT Libraries

Nano-crystallization Inhibition in 5 Nm Ru Film Diffusion Barriers for Advanced Cu-interconnect

Description: As the semiconductor industries are moving beyond 22 nm node technology, the currently used stacked Ta/TaN diffusion barrier including a copper seed will be unable to fulfill the requirements for the future technologies. Due to its low resistivity and ability to perform galvanic copper fill without a seed layer, ruthenium (Ru) has emerged as a potential copper diffusion barrier. However, its crystallization and columnar nanostructure have been the main cause of barrier failures even at low processing temperatures (300 oC -350 oC). In this study, we have proposed and evaluated three different strategies to improve the performance of the ultrathin Ru film as a diffusion barrier for copper. The first study focused on shallow surface plasma irradiation/amorphization and nitridation of 5 nm Ru films. Systematic studies of amorphization and nitrogen incorporation versus sample bias were performed. XPS, XRD and RBS were used to determine the physico-chemical, crystallization and barrier efficiency of the plasma modified Ru barrier. The nitrogen plasma surface irradiation of Ru films at substrate bias voltage of -350 V showed an improved barrier performance up to 400 oC annealing temperatures. The barrier barely started failing at 450 oC due mainly to nitrogen instability. The second study involved only amorphization of the Ru thin film without any nitrogen incorporation. A low energy ion beam irradiation/amorphization on Ru thin film was carried out by using 60 KeV carbon ions with different irradiation doses. The irradiation energy was chosen high enough so that the irradiation ions pass through the whole Ru thin film and stop in the SiO2/Si support substrate. The C-ion fluence of 5×1016 atoms/cm2 at 60 KeV made the Ru film near amorphous without changing its composition. XRD and RBS were used to determine the relationship between crystallization and barrier efficiency of the carbon irradiated Ru barrier. The amorphized ...
Date: December 2013
Creator: Sharma, Bed P.
Partner: UNT Libraries