A 2.53 NEF 8-bit 10 kS/s 0.5 µm CMOS Neural Recording Read-Out Circuit with High Linearity for Neuromodulation Implants
Description:
This article presents a power-efficient complementary metal-oxide-semiconductor (CMOS) neural signal-recording read-out circuit for multichannel neuromodulation implants.
Date:
March 3, 2021
Creator:
Tasneem, Nishat Tarannum & Mahbub, Ifana
Item Type:
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Partner:
UNT College of Engineering