6 Matching Results

Search Results

Evolution of Vacancy Supersaturations in MeV Si Implanted Silicon

Description: High-energy Si implantation into silicon creates a net defect distribution that is characterized by an excess of interstitials near the projected range and a simultaneous excess of vacancies closer to the surface. This defect distribution is due to the spatial separation between the distributions of interstitials and vacancies created by the forward momentum transferred from the implanted ion to the lattice atom. This dissertation investigates the evolution of the near-surface vacancy excess in MeV Si-implanted silicon both during implantation and post-implant annealing. Although previous investigations have identified a vacancy excess in MeV-implanted silicon, the investigations presented in this dissertation are unique in that they are designed to correlate the free-vacancy supersaturation with the vacancies in clusters. Free-vacancy (and interstitial) supersaturations were measured with Sb (B) dopant diffusion markers. Vacancies in clusters were profiled by Au labeling; a new technique based on the observation that Au atoms trap in the presence of open-volume defects. The experiments described in this dissertation are also unique in that they were designed to isolate the deep interstitial excess from interacting with the much shallower vacancy excess during post-implant thermal processing.
Date: May 1999
Creator: Venezia, Vincent C.
Partner: UNT Libraries

Precision Atomic Spectroscopy with an Integrated Electro- Optic Modulator and DBR Diode Laser at 1083nm

Description: We have explored the use of recently developed high speed integrated electro optic modulators and DBR diode lasers as a tool for precision laser studies of atoms. In particular, we have developed a technique using a high speed modulator as a key element and applied it to the study of the fine structure of the 23P state of atomic helium. This state has been of long standing interest in atomic physics and its study has been the aim of several recent experiments using various precision techniques. We present our method and results, which will describe a new method for determining the fine structure constant, and lead to a precision test of atomic theory.
Access: This item is restricted to UNT Community Members. Login required if off-campus.
Date: December 1999
Creator: Castillega, Jaime
Partner: UNT Libraries

Picosecond Dynamics of Free-Carrier Populations, Space-Charge Fields, and Photorefractive Nonlinearities in Zincblende Semiconductors

Description: Generally, nonlinear optics studies investigate optically-induced changes in refraction or absorption, and their application to spectroscopy or device fabrication. The photorefractive effect is a nonlinear optical effect that occurs in solids, where transport of an optically-induced free-carrier population results in an internal space-charge field, which produces an index change via the linear electrooptic effect. The photorefractive effect has been widely studied for a variety of materials and device applications, mainly because it allows large index changes to be generated with laser beams having only a few milliwatts of average power.Compound semiconductors are important photorefractive materials because they offer a near-infrared optical response, and because their carrier transport properties allow the index change to be generated quickly and efficiently. While many researchers have attempted to measure the fundamental temporal dynamics of the photorefractive effect in semiconductors using continuous-wave, nanosecond- and picosecond-pulsed laser beams, these investigations have been unsuccessful. However, studies with this goal are of clear relevance because they provide information about the fundamental physical processes that produce this effect, as well as the material's speed and efficiency limitations for device applications.In this dissertation, for the first time, we time-resolve the temporal dynamics of the photorefractive nonlinearities in two zincblende semiconductors, semi-insulating GaAs and undoped CdTe. While CdTe offers a lattice-match to the infrared material HgxCd1-xTe, semi-insulating GaAs has been widely used in optoelectronic and high-speed electronic applications. We use a novel transient-grating experimental method that allows picosecond temporal resolution and high sensitivity. Our results provide a clear and detailed picture of the picosecond photorefractive response of both materials, showing nonlinearities due to hot-carrier transport and the Dember space-charge field, and a long-lived nonlinearity that is due to the EL2 midgap species in GaAs. We numerically model our experimental results using a general set of equations that describe nonlinear diffraction and ...
Date: August 1999
Creator: Stark, Thomas S.
Partner: UNT Libraries

Photoelectric Emission Measurements for CVD Grown Polycrystalline Diamond Films

Description: We examined CVD grown polycrystalline diamond films having different methane concentrations to detect defects and study the possible correlation between the methane concentration used during the growth process and the defect density. SEM and Raman results show that the amorphous and sp2 carbon content of the films increases with methane concentration. Furthermore, photoelectric emission from diamond is confirmed to be a two-photon process, hence the electrons are emitted from normally unoccupied states. We found that the photoelectric yield, for our samples, decreases with the increase in methane concentration. This trend can be accounted for in two different ways: either the types of defects observed in this experiment decrease in density as the methane concentration increases; or, the defect density stays the same or increases, but the increase in methane concentration leads to an increase in the electron affinity, which reduces the overall photoelectric yield.
Date: August 1999
Creator: Hassan, Tarek
Partner: UNT Libraries

Work Function Study of Iridium Oxide and Molybdenum Using UPS and Simultaneous Fowler-Nordheim I-V Plots with Field Emission Energy Distributions

Description: The characterization of work functions and field emission stability for molybdenum and iridium oxide coatings was examined. Single emission tips and flat samples of molybdenum and iridium oxide were prepared for characterization. The flat samples were characterized using X-ray Photoelectron Spectroscopy and X-ray diffraction to determine elemental composition, chemical shift, and crystal structure. Flat coatings of iridium oxide were also scanned by Atomic Force Microscopy to examine topography. Work functions were characterized by Ultraviolet Photoelectron Spectroscopy from the flat samples and by Field Emission Electron Distributions from the field emission tips. Field emission characterization was conducted in a custom build analytical chamber capable of measuring Field Emission Electron Distribution and Fowler-Nordheim I-V plots simultaneously to independently evaluate geometric and work function changes. Scanning Electron Microscope pictures were taken of the emission tips before and after field emission characterization to confirm geometric changes. Measurement of emission stability and work functions were the emphasis of this research. In addition, use of iridium oxide coatings to enhance emission stability was evaluated. Molybdenum and iridium oxide, IrO2, were characterized and found to have a work function of 4.6 eV and 4.2 eV by both characterization techniques, with the molybdenum value in agreement with previous research. The analytic chamber used in the field emission analysis demonstrated the ability to independently determine the value and changes in work function and emitter geometry by simultaneous measurement of the Field Emission Energy Distribution and Fowler-Nordheim I-V plots from single emitters. Iridium oxide coating was found to enhance the stability of molybdenum emission tips with a relatively low work function of 4.2 eV and inhibited the formation of high work function molybdenum oxides. However, the method of deposition of iridium and annealing in oxygen to form iridium oxide on molybdenum emitters left rather severe cracking in the protective oxide ...
Date: August 1999
Creator: Bernhard, John Michael
Partner: UNT Libraries