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Behavior of Transistors in a Magnetic Field

Description: Experiments are described which show that magnetic fields can exert a controlling influence on the operating characteristics of point contact transistors. The effect is especially evident when the transistor is operated in its negative resistance region. The frequency of an oscillator can be varied, or a switch made to trigger by applying a magnetic field to the transistor. Some applications of the principle are suggested; many more are evident.
Date: August 11, 1954
Creator: Sander, Howard H.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
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A GERMANIUM FIELD-EFFECT TRANSISTOR MADE FROM A HIGH-PURITY SUBSTRATE

Description: Field effect transistors have been fabricated on high-purity germanium substrates using low-temperature technology. The aim of this work is to preserve the low density of trapping centers in high-quality starting material by low-temperature (< 350 C) processing. The use of germanium promises to eliminate some of the traps which cause generation-recombination noise in silicon field-effect transistors (FET's) at low temperatures. Typically, the transconductance (g{sub m}) in the germanium FET'… more
Date: November 1, 1978
Creator: Hansen, William L.; Goulding, Frederick S. & Haller, Eugene E.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
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Epitaxially-Grown GaN Junction Field Effect Transistors

Description: Junction field effect transistors (JFET) are fabricated on a GaN epitaxial structure grown by metal organic chemical vapor deposition (MOCVD). The DC and microwave characteristics of the device are presented. A junction breakdown voltage of 56 V is obtained corresponding to the theoretical limit of the breakdown field in GaN for the doping levels used. A maximum extrinsic transconductance (g<sub>m</sub>) of 48 mS/mm and a maximum source-drain current of 270 mA/mm are achieved on a 0.8 &micro; m… more
Date: May 19, 1999
Creator: Baca, A. G.; Chang, P. C.; Denbaars, S. P.; Lester, L. F.; Mishra, U. K.; Shul, R. J. et al.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
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Determination of late-time Gamma-Ray (60Co) sensitivity of single diffusion Lot 2N2222A transistors.

Description: Sandia National Laboratories (SNL) has embarked on a program to develop a methodology to use damage relations techniques (alternative experimental facilities, modeling, and simulation) to understand the time-dependent effects in transistors (and integrated circuits) caused by neutron irradiations in the Sandia Pulse Reactor-III (SPR-III) facility. The development of these damage equivalence techniques is necessary since SPR-III was shutdown in late 2006. As part of this effort, the late time {g… more
Date: August 1, 2008
Creator: DePriest, Kendall Russell; Kajder, Karen C. & Peters, Curtis D.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
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GaN High Power Devices

Description: A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors, GaN heterostructure and metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.
Date: July 17, 2000
Creator: Pearton, S. J.; Ren, F.; Zhang, A. P.; Dang, G.; Cao, X. A.; Lee, K. P. et al.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
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Fabrication and characterization of GaN junction field effect transistors

Description: Junction field effect transistors (JFET) were fabricated on a GaN epitaxial structure grown by metal organic chemical vapor deposition. The DC and microwave characteristics, as well as the high temperature performance of the devices were studied. These devices exhibited excellent pinch-off and a breakdown voltage that agreed with theoretical predictions. An extrinsic transconductance (g{sub m}) of 48 mS/mm was obtained with a maximum drain current (I{sub D}) of 270 mA/mm. The microwave measurem… more
Date: January 11, 2000
Creator: Zhang, L.; Lester, L. F.; Baca, A. G.; Shul, R. J.; Chang, P. C.; Willison, C. L. et al.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
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Transistorization of Nuclear Counting Circuits

Description: From Abstract: "The advantage of long operational life, low power drain and miniaturization may be realized in nuclear counting circuits through the use of transistors. The disadvantage of instability, due to the effects of temperature change in the transistor, may be minimized in counting circuit designs. Representative circuits of a binary stage, amplitude discriminator, one shot multivibrator, and ratemeters are included. These were designed using the criteria of an minimum Beta and a maximu… more
Date: August 19, 1957
Creator: Graveson, R. T. & Sadowski, H.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
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Simulation of neutron displacement damage in bipolar junction transistors using high-energy heavy ion beams.

Description: Electronic components such as bipolar junction transistors (BJTs) are damaged when they are exposed to radiation and, as a result, their performance can significantly degrade. In certain environments the radiation consists of short, high flux pulses of neutrons. Electronics components have traditionally been tested against short neutron pulses in pulsed nuclear reactors. These reactors are becoming less and less available; many of them were shut down permanently in the past few years. Therefore… more
Date: December 1, 2006
Creator: Doyle, Barney Lee; Buller, Daniel L.; Hjalmarson, Harold Paul; Fleming, Robert M; Bielejec, Edward Salvador & Vizkelethy, Gyorgy
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
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Transistors: Counters

Description: Abstract: "Two transistor plug-in decade counters are described, one of which operates over the SCS-7 temperature range. A transistor digital scanner with storage and parallel readout is described. It utilizes one of the plug-in decades. A simple design procedure for flip-flops is presented."
Date: May 29, 1957
Creator: Pollard, Neith
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
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Design and performance of the traveling-wave beam chopper for the SSRL injector

Description: A pulsed, split-parallel plate chopper has been designed built, and installed as part of the preinjector of the SSRL Injector. Its function is to allow the linear accelerator three consecutive S-band bunches from the long bunch train provided by a RF gun. A permanent magnet deflector (PMD) at the chopper entrance deflects the beam into an absorber when the chopper pulse is off. The beam is swept across a pair of slits at the beam output end when a 7 kV, 10-ns rise-time pulse passes in the oppos… more
Date: May 1, 1991
Creator: Borland, M.; Weaver, J. N.; Baltay, M.; Emery, L.; Fisher, A. S.; Golceff, P. et al.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
open access

GaN Electronics For High Power, High Temperature Applications

Description: A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers. GaN/AlGaN heterojunction bipolar transistors and GaN metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.
Date: June 12, 2000
Creator: Pearton, S. J.; Ren, F.; Zhang, A. P.; Dang, G.; Cao, X. A.; Lee, K. P. et al.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
open access

The Influence of Ohmic Metals and Oxide Deposition on the Structure and Electrical Properties of Multilayer Epitaxial Graphene on Silicon Carbide Substrates

Description: Graphene has attracted significant research attention for next generation of semiconductor devices due to its high electron mobility and compatibility with planar semiconductor processing. In this dissertation, the influences of Ohmic metals and high dielectric (high-k) constant aluminum oxide (Al2O3) deposition on the structural and electrical properties of multi-layer epitaxial graphene (MLG) grown by graphitization of silicon carbide (SiC) substrates have been investigated. Uniform MLG was s… more
Date: May 2011
Creator: Maneshian, Mohammad Hassan
Item Type: Refine your search to only Thesis or Dissertation
Partner: UNT Libraries
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Correction magnet power supplies for APS machine

Description: The Advanced Photon Source machine requires a number of correction magnets; five kinds for the storage ring, two for the injector synchrotron, and two for the positron accumulator ring. Three types of bipolar power supply will be used for all the correction magnets. This paper describes the design aspects and considerations for correction magnet power supplies for the APS machine. 3 refs., 3 figs., 1 tab.
Date: January 1, 1991
Creator: Kang, Y.G.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
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Ion implantation processing for high-speed GaAs JFETs

Description: GaAs Junction Field Effect Transistors (JFETs) offer a higher gate turn-on voltage, resulting in a better noise margin and reduced power dissipation, than the more widely employed GaAs MESFET. The primary reason the JFET has not been more widely used is the speed penalty associated with the gate/channel junction and corresponding gate length broadening. We present the ion implantation processes used for a self-aligned, all ion-implanted, GaAs JFET that minimizes the speed penalty for the JFET w… more
Date: July 1, 1995
Creator: Zolper, J. C.; Baca, A. G.; Sherwin, M. E. & Shul, R. J.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
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Oxide degradation effects in dry patterning of resist using neutral oxygen beams

Description: Novel processing methods are being studied to address the highly selective and directional etch requirements of the ULSI manufacturing era; neutral molecular and atomic beams are two promising candidates. In this study, the potential of 5 eV neutral atomic oxygen beams for dry development of photoresist is demonstrated for application in patterning of CMOS devices. The patterning of photoresist directly on polysilicon gate layers enables the use of a self-contained dry processing strategy, with… more
Date: January 1, 1992
Creator: Mlynko, W. E.; Kasi, S. R. (International Business Machines Corp., Essex Junction, VT (United States)) & Manos, D. (Princeton Univ., NJ (United States). Plasma Physics Lab.)
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
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Using nanoscale transistors to measure single donor spins in semiconductors

Description: We propose a technique for measuring the state of a single donor electron spin usinga field-effect transistor induced two-dimensional electron gas and electrically detected magnetic resonance techniques. The scheme is faciltated by hyperfine coupling to the donor nucleus. We analyze the potential sensitivity and outlne experimental reqiurements. Our measurement provides a single-shot, projective, and quantum non-demoltion measurement of an electron-encoded qubit state.
Date: December 1, 2008
Creator: Sarovar, M.; Young, K. C.; Whaley, K. B. & Schenkel, Thomas
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
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Monolithic preamplifier employing epitaxial N-channel JFETs

Description: This paper reports the results obtained in the research program oriented to the realisation of a monolithic preamplifier for calorimetry applications at high luminosity colliders. The main purpose of the program is to arrive at a monolithic realisation with a performance as close as possible to that of discrete preamplifiers. The junction field-effect transistors employed in discrete preamplifiers have an epitaxial channel and a very heavily doped gate diffused onto it. They present the best no… more
Date: February 1, 1992
Creator: Radeka, V.; Rescia, S.; Manfredi, P. F.; Re, V. & Speziali, V.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
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Past Analogue Multipliers with Field-Effect Transistors

Description: The solution time of analogue multipliers using field-effect transistors is investigated. This time is ultimately limited by the charging time of the field-effect transistor junction. In typical devices suitable for analogue multiplication the charging time is found to be about 10-20 nsec less than one percent. A four quadrant pulse amplitude multiplier circuit is described, whose solution time is equal to the field-effect transistor charging time.
Date: December 24, 1963
Creator: Radeka, V.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
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Development of Low Noise Preamplifier for the Detection and Position Determination of Single Electrons in a Cerenkov Ring Imaging Detector by Charge Division

Description: A preamplifier having 500 electrons noise (rms) has been developed for the detection and location of single electrons in a CRID detector at the SLD. A single channel contains preamp, RC-CR shaper, gain adjustment, driver, and calibration circuitry. Noise and linearity measurements are presented.
Date: October 1, 1987
Creator: Spencer, E.; Coyle, P.; Williams, D.; Bienz, T.; Bird, F.; Gaillard, M. et al.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
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