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Cu Electrodeposition on Ru with a Chemisorbed Iodine Surface Layer.

Description: An iodine surface layer has been prepared on Ru(poly) and Ru(0001) electrodes by exposure to iodine vapor in UHV and polarizing in a 0.1 M HClO4/0.005 M KI solution, respectively. A saturation coverage of I on a Ru(poly) electrode passivates the Ru surface against significant hydroxide, chemisorbed oxygen or oxide formation during exposure to water vapor over an electrochemical cell in a UHV-electrochemistry transfer system. Immersion of I-Ru(poly) results in greater hydroxide and chemisorbed oxygen formation than water vapor exposure, but an inhibition of surface oxide formation relative that of the unmodified Ru(poly) surface is still observed. Studies with combined electrochemical and XPS techniques show that the iodine surface adlayer remained on top of the surface after cycles of overpotential electrodeposition/dissolution of copper on both Ru(poly) and Ru(0001) electrodes. These results indicate the potential bifunctionality of iodine layer to both passivate the Ru surface in the microelectronic processing and to act as a surfactant for copper electrodeposition. The electrodeposition of Cu on Ru(0001) or polycrystalline Ru was studied using XPS with combined ultrahigh vacuum/electrochemistry methodology (UHV-EC) in 0.1 M HClO4 with Cu(ClO4)2 concentrations ranging from 0.005 M to 0.0005 M, and on polycrystalline Ru in a 0.05M H2SO4/0.005 M CuSO4/0.001 M NaCl solution. The electrochemical data show well-defined cyclic voltammograms (CV) with a Cu underpotential deposition (UPD) peak and overpotential deposition (OPD) peak. XPS spectra of Ru electrodes emersed from perchloric acid solution at cathodic potentials indicate that ClO4- anions dissociate to yield specifically adsorbed Cl and ClOx species. Subsequent Cu deposition results in the formation of a thin, insoluble Cu(II) film with Cu(I) underneath. In contrast, similar deposition on polycrystalline Ru in the sulfuric acid/Cu sulfate solution with NaCl added yields only Cu(0), indicating that the formation of Cu(II) and Cu(I) involves both Cl and perchlorate interactions with the ...
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Date: August 2005
Creator: Lei, Jipu
Partner: UNT Libraries

Electrochemical Depostion of Bismuth on Ruthenium and Ruthenium Oxide Surfaces

Description: Cyclic voltammetry experiments were performed to compare the electrodeposition characteristics of bismuth on ruthenium. Two types of electrodes were used for comparison: a Ru shot electrode (polycrystalline) and a thin film of radio-frequency sputtered Ru on a Ti/Si(100) support. Experiments were performed in 1mM Bi(NO3)3/0.5M H2SO4 with switching potentials between -0.25 and 0.55V (vs. KCl sat. Ag/AgCl) and a 20mV/s scan rate. Grazing incidence x-ray diffraction (GIXRD) determined the freshly prepared thin film electrode was hexagonally close-packed. After thermally oxidizing at 600°C for 20 minutes, the thin film adopts the tetragonal structure consistent with RuO2. a hydrated oxide film (RuOx?(H2O)y) was made by holding 1.3V on the surface of the film in H2SO4 for 60 seconds and was determined to be amorphous. Underpotential deposition of Bi was observed on the metallic surfaces and the electrochemically oxidized surface; it was not observed on the thermal oxide.
Date: May 2012
Creator: Taylor, Daniel M.
Partner: UNT Libraries

Nano-crystallization Inhibition in 5 Nm Ru Film Diffusion Barriers for Advanced Cu-interconnect

Description: As the semiconductor industries are moving beyond 22 nm node technology, the currently used stacked Ta/TaN diffusion barrier including a copper seed will be unable to fulfill the requirements for the future technologies. Due to its low resistivity and ability to perform galvanic copper fill without a seed layer, ruthenium (Ru) has emerged as a potential copper diffusion barrier. However, its crystallization and columnar nanostructure have been the main cause of barrier failures even at low processing temperatures (300 oC -350 oC). In this study, we have proposed and evaluated three different strategies to improve the performance of the ultrathin Ru film as a diffusion barrier for copper. The first study focused on shallow surface plasma irradiation/amorphization and nitridation of 5 nm Ru films. Systematic studies of amorphization and nitrogen incorporation versus sample bias were performed. XPS, XRD and RBS were used to determine the physico-chemical, crystallization and barrier efficiency of the plasma modified Ru barrier. The nitrogen plasma surface irradiation of Ru films at substrate bias voltage of -350 V showed an improved barrier performance up to 400 oC annealing temperatures. The barrier barely started failing at 450 oC due mainly to nitrogen instability. The second study involved only amorphization of the Ru thin film without any nitrogen incorporation. A low energy ion beam irradiation/amorphization on Ru thin film was carried out by using 60 KeV carbon ions with different irradiation doses. The irradiation energy was chosen high enough so that the irradiation ions pass through the whole Ru thin film and stop in the SiO2/Si support substrate. The C-ion fluence of 5×1016 atoms/cm2 at 60 KeV made the Ru film near amorphous without changing its composition. XRD and RBS were used to determine the relationship between crystallization and barrier efficiency of the carbon irradiated Ru barrier. The amorphized ...
Date: December 2013
Creator: Sharma, Bed P.
Partner: UNT Libraries

Materials properties of ruthenium and ruthenium oxides thin films for advanced electronic applications.

Description: Ruthenium and ruthenium dioxide thin films have shown great promise in various applications, such as thick film resistors, buffer layers for yttrium barium copper oxide (YBCO) superconducting thin films, and as electrodes in ferroelectric memories. Other potential applications in Si based complementary metal oxide semiconductor (CMOS) devices are currently being studied. The search for alternative metal-based gate electrodes as a replacement of poly-Si gates has intensified during the last few years. Metal gates are required to maintain scaling and performance of future CMOS devices. Ru based materials have many desirable properties and are good gate electrode candidates for future metal-oxide-semiconductor (MOS) device applications. Moreover, Ru and RuO2 are promising candidates as diffusion barriers for copper interconnects. In this thesis, the thermal stability and interfacial diffusion and reaction of both Ru and RuO2 thin films on HfO2 gate dielectrics were investigated using Rutherford backscattering spectrometry (RBS), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). An overview of Ru and RuO2/HfO2 interface integrity issues will be presented. In addition, the effects of C ion modification of RuO2 thin films on the physico-chemical and electrical properties are evaluated.
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Date: May 2006
Creator: Lim, ChangDuk
Partner: UNT Libraries

Synthesis and characterization of diphosphine ligand substituted osmium and ruthenium clusters.

Description: The kinetics for the bridge-to-chelate isomerization of the dppe ligand in H4Ru4(CO)10(dppe) have been investigated by UV-vis and NMR spectroscopies over the temperature range of 308-328 K. The isomerization of the ligand-bridged cluster 1,2-H4Ru4(CO)10(dppe) was found to be reversible by 31P NMR spectroscopy, affording a Keq = 15.7 at 323 K in favor of the chelating dppe isomer. The forward (k1) and reverse (k-1) first-order rate constants for the reaction have been measured in different solvents and in the presence of ligand trapping agents (CO and PPh3). On the basis of the activation parameters and reaction rates that are unaffected by added CO and PPh3, a sequence involving the nondissociative migration of a phosphine moiety and two CO groups between basal ruthenium centers is proposed and discussed. The substitution of the MeCN ligands in the activated cluster 1,2-Os3(CO)10(MeCN)2 by the diphosphine ligands dppbz proceeds rapidly at room temperature to furnish a mixture of bridging and chelating Os3(CO)10(dppbz) isomers and the ortho-metalated product HOs3(CO)9[μ-(PPh2)C=C{PPh(C6H4)}C4H4]. Thermolysis of the bridging isomer 1,2-Os3(CO)10(dppbz) under mild conditions gives the chelating isomer 1,1-Os3(CO)10(dppbz), molecular structure of both the isomers have been determined by X-ray crystallography. The kinetics for the ligand isomerization has been investigated by UV-vis and 1H NMR spectroscopy in toluene solution over the temperature range of 318-343 K. On the basis of kinetic data conducted in the presence of added CO and the Eyring activation parameters, a non-dissociative phosphine migration across one of the Os-Os bonds is proposed. Ortho metalation of one of the phenyl groups associated with the dppbz ligand is triggered by near-UV photolysis of the chelating cluster 1,1-Os3(CO)10(dppbz). The triosmium cluster 1,2-Os3(CO)10(MeCN)2 reacts with the diphosphine ligand 3,4­bis(diphenylphosphino)-5-methoxy-2(5)H-furanone (bmf) at 25 ºC to give the bmf-bridged cluster 1,2-Os3(CO)10(bmf). Heating 1,2-Os3(CO)10(bmf) leads to an equilibrium with the chelating isomer 1,1-Os3(CO)10(bmf). The molecular ...
Date: August 2007
Creator: Kandala, Srikanth
Partner: UNT Libraries

VISIBLE SPECTRA OF DICARBONYL SUBSTITUTED TRIS-BIPYRIDYL RUTHENIUM (II) COMPLEXES

Description: The solvent dependence of the metal-to-ligand charge-transfer band pattern of tris-bipyridyl ruthenium(II) derivatives with carbonyl substituents is attributed to a reduction in the energy required for electron transfer to the dicarbonylated bipyridyl ligand with an increase in solvent polarity.
Date: July 1, 1980
Creator: Ford, W.E. & Calvin, M.
Partner: UNT Libraries Government Documents Department

Mask roughness and its implications for LER at the 22- and 16-nm nodes

Description: Line-edge roughness (LER) remains the most significant challenge facing the development of extreme ultraviolet (EUV) resist. The mask, however, has been found to be a significant contributor to image-plane LER. This has long been expected based on modeling and has more recently been demonstrated experimentally. Problems arise from both mask-absorber LER as well as mask multilayer roughness leading to random phase variations in the reflected beam and consequently speckle. Understanding the implications this has on mask requirements for the 22-nm half pitch node and below is crucial. Modeling results indicate a replicated surface roughness (RSR) specification of 50 pm and a ruthenium capping layer roughness specification of 440 pm. Moreover, modeling indicates that it is crucial to achieve the current ITRS specifications for mask absorber LER which is significantly smaller than current capabilities.
Date: February 16, 2010
Creator: Naulleau, Patrick; George, Simi A. & McClinton, Brittany M.
Partner: UNT Libraries Government Documents Department

Study of Ruthenium and Ruthenium Oxide's Electrochemical Properties and Application as a Copper Diffusion Barrier

Description: As a very promising material of copper diffusion barrier for next generation microelectronics, Ru has already obtained a considerable attention recently. In this dissertation, we investigated ruthenium and ruthenium oxide electrochemical properties and the application as a copper diffusion barrier. Cu under potential deposition (UPD) on the RuOx formed electrochemically was first observed. Strong binding interaction, manifesting by the observed Cu UPD process, exists between Cu and Ru as well as its conductive ruthenium oxide. Since UPD can be conformally formed on the electrode surface, which enable Ru and RuOx has a potential application in the next generation anode. The [Cl-] and pH dependent experiment were conducted, both of them will affect UPD Cu on Ru oxide. We also found the Cu deposition is thermodynamically favored on RuOx formed electrochemically. We have studied the Ru thin film (5nm) as a copper diffusion barrier. It can successfully block Cu diffusion annealed at 300 oC for 10min under vacuum, and fail at 450 oC. We think the silicidation process at the interface between Ru and Si. PVD Cu/Ru/Si and ECP Cu/Ru/Si were compared each other during copper diffusion study. It was observed that ECP Cu is easy to diffuse through Ru barrier. The function of RuOx in diffusion study on Cu/Ru/Si stack was discussed. In pH 5 Cu2+ solution, Ru and Pt electrochemical behavior were investigated. A sharp difference was observed compared to low pH value. The mechanism in pH 5 Cu2+ solution was interpreted. An interesting compound (posnjakite) was obtained during the electrochemical process. An appropriate formation mechanism was proposed. Also Cu2O was formed in the process. We found oxygen reduction reaction is a key factor to cause this phenomenon.
Date: August 2005
Creator: Zhang, Yibin
Partner: UNT Libraries

Electrodeposition of Copper on Ruthenium Oxides and Bimetallic Corrosion of Copper/Ruthenium in Polyphenolic Antioxidants

Description: Copper (Cu) electrodeposition on ruthenium (Ru) oxides was studied due to important implications in semiconductor industry. Ruthenium, proposed as the copper diffusion barrier/liner material, has higher oxygen affinity to form different oxides. Three different oxides (the native oxide, reversible oxide, and irreversible oxide) were studied. Native oxide can be formed on exposing Ru in atmosphere. The reversible and irreversible oxides can be formed by applying electrochemical potential. Investigation of Cu under potential deposition on these oxides indicates the similarity between native and reversible oxides by its nature of inhibiting Cu deposition. Irreversible oxide formed on Ru surface is rather conductive and interfacial binding between Cu and Ru is greatly enhanced. After deposition, bimetallic corrosion of Cu/Ru in different polyphenols was studied. Polyphenols are widely used as antioxidants in post chemical mechanical planarization (CMP). For this purpose, different trihydroxyl substituted benzenes were used as antioxidants. Ru, with its noble nature enhances bimetallic corrosion of Cu. Gallic acid (3,4,5 - trihydroxybenzoic acid) was chosen as model compound. A mechanism has been proposed and validity of the mechanism was checked with other antioxidants. Results show that understanding the chemical structure of antioxidants is necessary during its course of reaction with Cu.
Date: August 2007
Creator: Venkataraman, Shyam S.
Partner: UNT Libraries

Synthesis of the Five-Coordinate Ruthenium (II) Complexes [(PCP)Ru(CO)(L)][BAr'4] {PCP = 2,6-(CH2PtBu2)2 C6H3, BAr'4 = 3,5-(CF3)2C6H3, L= ɳ1-CICH2CI, ɳ 1-N2, or μ-Cl-Ru(PCP)(CO)}: Reactions with Phenyldiazomethane and Phenylacetylene

Description: Article discussing the synthesis of the five-coordinate ruthenium (II) complexes and reactions with phenyldiazomethane and phenylacetylene.
Date: October 6, 2005
Creator: Zhang, Jubo; Barakat, Khaldoon A.; Cundari, Thomas R., 1964-; Gunnoe, T. Brent; Boyle, Paul D.; Petersen, Jeffrey L. et al.
Partner: UNT College of Arts and Sciences

Computational Studies of Selected Ruthenium Catalysis Reactions.

Description: Computational techniques were employed to investigate pathways that would improve the properties and characteristics of transition metal (i.e., ruthenium) catalysts, and to explore their mechanisms. The studied catalytic pathways are particularly relevant to catalytic hydroarylation of olefins. These processes involved the +2 to +3 oxidation of ruthenium and its effect on ruthenium-carbon bond strengths, carbon-hydrogen bond activation by 1,2-addition/reductive elimination pathways appropriate to catalytic hydrogen/deuterium exchange, and the possible intermediacy of highly coordinatively unsaturated (e.g., 14-electron) ruthenium complexes in catalysis. The calculations indicate a significant decrease in the Ru-CH3 homolytic bond dissociation enthalpy for the oxidation of TpRu(CO)(NCMe)(Me) to its RuIII cation through both reactant destabilization and product stabilization. This oxidation can thus lead to the olefin polymerization observed by Gunnoe and coworkers, since weak RuIII-C bonds would afford quick access to alkyl radical species. Calculations support the experimental proposal of a mechanism for catalytic hydrogen/deuterium exchange by a RuII-OH catalyst. Furthermore, calculational investigations reveal a probable pathway for the activation of C-H bonds that involves phosphine loss, 1,2-addition to the Ru-OH bond and then reversal of these steps with deuterium to incorporate it into the substrate. The presented results offer the indication for the net addition of aromatic C-H bonds across a RuII-OH bond in a process that although thermodynamically unfavorable is kinetically accessible. Calculations support experimental proposals as to the possibility of binding of weakly coordinating ligands such as dinitrogen, methylene chloride and fluorobenzene to the "14-electron" complex [(PCP)Ru(CO)]+ in preference to the formation of agostic Ru-H-C interactions. Reactions of [(PCP)Ru(CO)(1-ClCH2Cl)][BAr'4] with N2CHPh or phenylacetylene yielded conversions that are exothermic to both terminal carbenes and vinylidenes, respectively, and then bridging isomers of these by C-C bond formation resulting from insertion into the Ru-Cipso bond of the phenyl ring of PCP. The QM/MM and DFT calculations on full complexes ...
Date: December 2007
Creator: Barakat, Khaldoon A.
Partner: UNT Libraries

Substitution chemistry of Ruthenium clusters with the diphosphine ligands: 4,5-Bis(diphenylphosphino)-4-cyclo-penten-1,3-dione (bpcd), (Z)-Ph₂PCH=CHPP₂ and 3,4-Bis(diphenylphosphino)-5-methoxy-2(5H)-furanone (bmf)

Description: This study embarks on a program designed to study the reactivity of polynuclear clusters with redox-active phospines in an effort to prepare new ligand/cluster redox systems. This study aims to prove that such compounds will display superior electron reservoir capabilities, as a result of the cooperative mixing of ligand and cluster orbitals.
Date: May 1997
Creator: Shen, Huafeng
Partner: UNT Libraries

Synthesis and Reactivity of a Coordinatively Unsaturated Ruthenium(II) Parent Amido Complex: Studies of X-H Activation (X = H or C)

Description: Article discussing the synthesis and reactivity of a coordinatively unsaturated Ruthenium(II) parent amido complex and studies of X-H activation (X = H or C).
Date: April 27, 2004
Creator: Conner, David; Jayaprakash, K. N.; Cundari, Thomas R., 1964- & Gunnoe, T. Brent
Partner: UNT College of Arts and Sciences

Tantalum- and ruthenium-based diffusion barriers/adhesion promoters for copper/silicon dioxide and copper/low κ integration.

Description: The TaSiO6 films, ~8Å thick, were formed by sputter deposition of Ta onto ultrathin SiO2 substrates at 300 K, followed by annealing to 600 K in 2 torr O2. X-ray photoelectron spectroscopy (XPS) measurements of the films yielded a Si(2p) binding energy at 102.1 eV and Ta(4f7/2) binding energy at 26.2 eV, indicative of Ta silicate formation. O(1s) spectra indicate that the film is substantially hydroxylated. Annealing the film to > 900 K in UHV resulted in silicate decomposition to SiO2 and Ta2O5. The Ta silicate film is stable in air at 300K. XPS data show that sputter-deposited Cu (300 K) displays conformal growth on Ta silicate surface (TaSiO6) but 3-D growth on the annealed and decomposed silicate surface. Initial Cu/silicate interaction involves Cu charge donation to Ta surface sites, with Cu(I) formation and Ta reduction. The results are similar to those previously reported for air-exposed TaSiN, and indicate that Si-modified Ta barriers should maintain Cu wettability under oxidizing conditions for Cu interconnect applications. XPS has been used to study the reaction of tert-butylimino tris(diethylamino) tantalum (TBTDET) with atomic hydrogen on SiO2 and organosilicate glass (OSG) substrates. The results on both substrates indicate that at 300K, TBTDET partially dissociates, forming Ta-O bonds with some precursor still attached. Subsequent bombardment with atomic hydrogen at 500K results in stoichiometric TaN formation, with a Ta(4f7/2) feature at binding energy 23.2 eV and N(1s) at 396.6 eV, leading to a TaN phase bonded to the substrate by Ta-O interactions. Subsequent depositions of the precursor on the reacted layer on SiO2 and OSG, followed by atomic hydrogen bombardment, result in increased TaN formation. These results indicate that TBTDET and atomic hydrogen may form the basis for a low temperature atomic layer deposition (ALD) process for the formation of ultraconformal TaNx or Ru/TaNx barriers. The interactions ...
Date: December 2004
Creator: Zhao, Xiaopeng
Partner: UNT Libraries

Study of Copper Electrodeposition on Ruthenium Oxide Surfaces and Bimetallic Corrosion of Copper/Ruthenium in Gallic Acid Solution

Description: Ruthenium, proposed as a new candidate of diffusion barrier, has three different kinds of oxides, which are native oxide, electrochemical reversible oxide and electrochemical irreversible oxide. Native oxide was formed by naturally exposed to air. Electrochemical reversible oxide was formed at lower anodic potential region, and irreversible oxides were formed at higher anodic potential region. In this study, we were focusing on the effect of copper electrodeposition on each type of oxides. From decreased charge of anodic stripping peaks and underpotential deposition (UPD) waves in cyclic voltammetry (CV), efficiency of Cu deposition dropped off indicating that interfacial binding strength between Cu and Ru oxides was weakened when the Ru surface was covered with irreversible oxide and native oxide. Also, Cu UPD was hindered by both O2 and H2 plasma modified Ru surfaces because the binding strength between Cu and Ru was weakened by O2 and H2 plasma treatment. Cu/Ru and Cu/Ta bimetallic corrosion was studied for understanding the corrosion behavior between diffusion barrier (Ta and Ru) and Cu interconnects under the post chemical mechanical planarization (CMP) process in semiconductor fabrication. Gallic acid is used in post CMP slurry solution and is known well as antioxidant which is supposed to oxidize itself to prevent other species from oxidizing. However, in this study under the observation of Cu microdot corrosion test, copper was corroded only in gallic acid at specific pH region of alkaline condition which is close to the pH region for post CMP solution formula. With different pH alkaline condition, gallic acid formed different oxidized products which are characterized by cyclic voltammetry and UV-Vis spectroscopy. Therefore, the specific oxidized product from particular pH region condition caused the Cu corrosion. Also, the corrosion rate of Cu microdots was influenced by substrate effect (Cu/Ru and Cu/Ta) and ambient control, which was included ...
Date: August 2007
Creator: Yu, Kyle K.
Partner: UNT Libraries

Stopping the growth of particles to silica-supported mono-nuclear Ru hydride surface species by tuning silica with surface silanes

Description: Tuning silica by replacing surface silanols with silanes allows chemical grafting of Ru(COD)(COT) through a covalent Ru-Si bond, as evidenced by elemental analysis, IR spectroscopy and EXAFS. Treatment of these surface species under H2 at 300 oC yields a mononuclear Ru hydride species, without any sintering of the metal according to TEM and EXAFS analyses. This supported system displays catalytic properties different from those of supported Ru particles (2 nm), selectively hydrogenating olefins over aromatics.
Date: July 11, 2007
Creator: Berthoud, Romain; Fenet, Bernard; Lukens, Wayne; Pelzer, Katrin; Basset, Jean-Marie; Candy, Jean-Pierre et al.
Partner: UNT Libraries Government Documents Department

Interfacial Studies of Bimetallic Corrosion in Copper/Ruthenium Systems and Silicon Surface Modification with Organic and Organometallic Chemistry

Description: To form Cu interconnects, dual-damascene techniques like chemical mechanical planarization (CMP) and post-CMP became inevitable for removing the "overburden" Cu and for planarizing the wafer surface. During the CMP processing, Cu interconnects and barrier metal layers experience different electrochemical interactions depending on the slurry composition, pH, and ohmic contact with adjacent metal layers that would set corrosion process. Ruthenium as a replacement of existing diffusion barrier layer will require extensive investigation to eliminate or control the corrosion process during CMP and post CMP. Bimetallic corrosion process was investigated in the ammonium citrate (a complexing agent of Cu in CMP solutions) using micro test patterns and potentiodynamic measurements. The enhanced bimetallic corrosion of copper observed is due to noble behavior of the ruthenium metal. Cu formed Cu(II)-amine and Cu(II)-citrate complexes in alkaline and acidic solutions and a corrosion mechanism has been proposed. The currently used metallization process (PVD, CVD and ALD) require ultra-high vacuum and are expensive. A novel method of Si surface metallization process is discussed that can be achieved at room temperature and does not require ultra-high vacuum. Ruthenation of Si surface through strong Si-Ru covalent bond formation is demonstrated using different ruthenium carbonyl compounds. RBS analysis accounted for monolayer to sub-monolayer coverage of Si surface. Interaction of other metal carbonyl (like Fe, Re, and Rh) is also discussed. The silicon (111) surface modifications with vinyl terminated organic compounds were investigated to form self-assembled monolayers (SAMs) and there after these surfaces were further functionalized. Acrylonitrile and vinylbenzophenone were employed for these studies. Ketone group of vinylbenzophenone anchored to Si surface demonstrated reactivity with reducing and oxidizing agents.
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Date: August 2006
Creator: Nalla, Praveen Reddy
Partner: UNT Libraries